ST 74V2G241 User Manual

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74V2G241

DUAL BUS BUFFER NON INVERTED (3-STATE)

■ HIGH SPEED: t

■ LOW POWER DISSIPATION:

I

=1µA(MAX.) atTA=25°C

CC

■ HIGH NOISE IMMUNITY:

V

NIH=VNIL

■ POWER DOWN PROTECTION ON INPUTS

= 28% VCC(MIN.)

= 3.8ns (TYP.) at VCC=5V

PD

AND OUTPUTS

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

|=IOL=8mA(MIN)atVCC=4.5V

OH

■ BALANCED PROPAGATION DELAYS:

t

≅ t

PLH

PHL

■ OPERATING VOLTAGE RANG E:

V

(OPR) = 2V to 5.5V

CC

■ IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The 74V2G241 is anadvanced high-speed CMOS
DUAL BUS BUFFER NON INVERTE R fabricated
with sub-micron silicon gate and double-layer
metal wiring C

2

MOS technology.
Power down protection is provided on all inputs
and outputs and 0 to 7V can be accepted on

SOT23-8L

ORDER CODES

PACKAGE T & R

SOT23-8L 74V2G241STR

inputs with no regard to the supply voltage. This
device can be used to interface 5V to 3V systems
and it is ideal for portable ap plicat ions like
personal digital assistant, camcorder and all
battery-powered equipment.
All inputs and outputs are equipped with
protection circuits aga inst st atic discharge, giving
them ESD immunity and transient excess voltage.

PIN CONNECTION AND IEC LOG IC SYMBOLS

1/9June 2003

74V2G241

INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

PIN No SYMBOL NAME AND FUNCTION

1, 7 1G
2, 5 1A, 2A Data Inputs
3, 6 2Y, 1Y Data Outputs

4 GND Ground (0V)
8

TRUTH TABLE

V

, 2G Output Enable Inputs

CC

Positive Supply Voltage

1G

2G A Y

LHL L
LHHH

HLXZ

X: "H" or "L"
Z: High Impedance

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

CC

V
V
V

I

IK

I

OK

I

or I

I

CC

T

stg

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.

1) V

=0V or nG=VCC(Output in High Impedance state)

CC

2) High or LowState

Supply Voltage
DC Input Voltage

I

DC Output Voltage (see note 1)

O

DC Output Voltage (see note 2) -0.5 to VCC+ 0.5

O

DC Input Diode Current
DC Output Diode Current
DC Output Current

O

DC VCCor Ground Current

GND

Storage Temperature
Lead Temperature (10 sec)

L

-0.5 to +7.0 V

-0.5 to +7.0 V

-0.5 to +7.0 V
V

− 20 mA

− 20 mA
± 25 mA
± 50 mA

-65 to +150 °C

260 °C

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

V

CC

V
V
V
T

dt/dv

1) VCC=0V or Output in High Impedance state

2) High or LowState

3) V

from30% to70% ofV

IN

2/9

Supply Voltage
Input Voltage

I

Output Voltage (see note 1)

O

Output Voltage (see note 2) 0 to V

O

Operating Temperature

op

(V

CC

CC

=3.3±0.3V)

= 5.0 ± 0.5V)

Input Rise and Fall Time (note 3) (V

CC

2 to 5.5 V
0 to 5.5 V
0 to 5.5 V

CC

-55 to 125 °C
0 to 100

0to20

V

ns/V
ns/V

DC SPECIFICATIONS

Symbol Parameter

V

V

V

I

High Level Input

IH

Voltage

V

Low Level Input

IL

Voltage

High Level Output

OH

Voltage

Low Level Output

OL

Voltage

High Impedance

I

OZ

Output Leakage
Current

Input Leakage

I

I

Current
Power down Output

OPD

Leakage Current
Quiescent Supply

I

CC

Current

Test Condition Value

V

(V)

CC

T

A

Min. Typ. Max. Min. Max. Min. Max.

-40 to 85°C -55 to 125°C

= 25°C

2.0 1.5 1.5 1.5

3.0to

5.5

0.7V

CC

0.7V

CC

0.7V

CC

2.0 0.5 0.5 0.5

3.0to

5.5

2.0

3.0

4.5

3.0

4.5

2.0

3.0

4.5

3.0

4.5

5.5

0to

5.5
0

5.5

IO=-50 µA

=-50 µA

I

O

=-50 µA

I

O

=-4 mA

I

O

=-8 mA

I

O

IO=50 µA

=50 µA

I

O

=50 µA

I

O

=4 mA

I

O

=8 mA

I

O

I=VIH

or V

IL

V

VO= 5.5 or GND

VI= 5.5V or GND

= 5.5

V

O

V

I=VCC

or GND

1.9 2.0 1.9 1.9

2.9 3.0 2.9 2.9

4.4 4.5 4.4 4.4

2.58 2.48 2.48

3.94 3.8 3.8

0.3V

CC

0.3V

CC

0.0 0.1 0.1 0.1

0.0 0.1 0.1 0.1

0.0 0.1 0.1 0.1

0.36 0.44 0.44

0.36 0.44 0.44

±0.25 ± 2.5 ± 2.5 µA

± 0.1 ± 1 ± 1 µA

0.5 5 10 µA

22020µA

74V2G241

Unit

V

CC

V

V

V

0.3V

3/9