ST 74V2G14 User Manual
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74V2G14
TRIPLE SCHMITT INVERTER
■ HIGH SPEED: t
■ LOW POWER DISSIPATION:
I
=1µA(MAX.) atTA=25°C
CC
■ TYPICAL HYSTERESIS:
V
= 800mV at VCC=4.5V
H
V
= 500mV at VCC=3.0V
H
■ POWER DOWN PROT ECTION ON INPUTS
= 3.0ns (TYP.) at VCC=5V
PD
AND OUTPUTS
■ SYMMETRICAL OUTPUT IMPEDANCE:
|I
|=IOL=8mA(MIN)atVCC=4.5V
OH
|=IOL=4mA(MIN)atVCC=3.0V
II
OH
■ BALANCED PROPAGATION DELAYS:
t
≅ t
PLH
PHL
■ OPERATING VOLTAGE RANG E:
V
(OPR) = 2V to 5.5V
CC
■ IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74V2G14 is an advanced high-speed CMOS
TRIPLE SCHMITT TRIGGER INVERTER
fabricated with sub-micron silicon gate and
double-layer metal wiring C
2
MOS tecnology.
The internal circuit is composed of 3 stages
including buffer output, which provide high noise
immunity and stable output.
SOT23-8L
ORDER CODES
PACKAGE T & R
SOT23-8L 74V2G14STR
Power down protection is provided on all inputs
and outputs a nd 0 to 7V can be accepted on
inputs with no regard to th e supply voltage.
Pin configuration and f unction are the same as
those of t he 74V 2G04, but 74V2G14 has
hysteresis on i nputs.
This device can be used to interface 5V to 3V
systems and it is idea l for portable applications
like personal digital assistant, camcorder and all
battery-powered equipment.
All inputs and outputs are equipped with
protection circuits aga inst static discharge, giving
them ESD immunity and transient excess voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
1/8June 2003
74V2G14
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No SYMBOL NAME QND FUNCTION
1, 3, 6 1A, 2A, 3A Data Inputs
7, 5, 2 1Y, 2Y, 3Y Data Outputs
4 GND Ground (0V)
8
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
V
I
I
OK
I
or I
I
CC
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
1) Vcc=0V
2) Highor Low State
Supply Voltage
CC
DC Input Voltage
I
DC Output Voltage (see note 1)
O
DC Output Voltage (see note 2) -0.5 to VCC+ 0.5
O
DC Input Diode Current
IK
DC Output Diode Current
DC Output Current
O
DC VCCor Ground Current
GND
Storage Temperature
stg
Lead Temperature (10 sec)
L
V
CC
Positive Supply Voltage
nA nY
LH
HL
-0.5 to +7.0 V
-0.5 to +7.0 V
-0.5 to +7.0 V
V
− 20 mA
− 20 mA
± 25 mA
± 50 mA
-65 to +150 °C
260 °C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
V
V
V
T
2/8
Supply Voltage
CC
Input Voltage
I
Output Voltage 0 to 5.5
O
Output Voltage 0 to V
O
Operating Temperature
op
2 to 5.5 V
0 to 5.5 V
CC
-55 to 125 °C
V
V
DC SPECIFICATIONS
Symbol Parameter
V
High Level Input
P
Voltage
V
Low Level Input
N
Voltage
V
Hysteresis Voltage 3.0 0.30 1.20 0.30 1.20 0.30 1.20
H
V
V
I
I
OPD
High Level Ouput
OH
Voltage
Low Level Output
OL
Voltage
Input Leakage
I
I
Current
Quiescent Supply
CC
Current
Power downOutput
Leakage Current
74V2G14
Test Condition Value
= 25°C
T
V
CC
(V)
A
Min. Typ. Max. Min. Max. Min. Max.
3.0 2.20 2.20 2.20
4.5 3.15 3.15 3.15
5.5 3.85 3.85 3.85
3.0 0.90 0.90 0.90
4.5 1.35 1.35 1.35
5.5 1.65 1.65 1.65
4.5 0.40 1.40 0.40 1.40 0.40 1.40
5.5 0.50
2.0
3.0
4.5
3.0
4.5
2.0
3.0
4.5
3.0
4.5
0to
5.5
5.5
0
IO=-50 µA
=-50 µA
I
O
I
=-50 µA
O
=-4 mA
I
O
=-8 mA
I
O
IO=50 µA
=50 µA
I
O
=50 µA
I
O
=4 mA
I
O
=8 mA
I
O
V
= 5.5V or GND
I
V
O
or GND
= 5.5
V
I=VCC
1.9 2.0 1.9 1.9
2.9 3.0 2.9 2.9
4.4 4.5 4.4 4.4
2.58 2.48 2.4
3.94 3.8 3.7
0.0 0.1 0.1 0.1
0.0 0.1 0.1 0.1
0.0 0.1 0.1 0.1
-40 to 85°C -55 to 125°C
1.60
0.50
1.60
0.50
1.60
0.36 0.44 0.55
0.36 0.44 0.55
± 0.1 ± 1 ± 1 µA
11020µA
0.5 5 10 µA
Unit
V
V
V
V
V
AC ELECTRICAL CHARACTERISTICS (Input t
Test Condition Value
Symbol Parameter
t
PLHtPHL
(*) Voltage range is3.3V ± 0.3V
(**) Voltage range is 5.0V ± 0.5V
Propagation Delay
Time
V
3.3
3.3
5.0
5.0
C
CC
(V)
L
(pF)
(*)
15 3.7 7.0 1.0 8.0 1.0 9.0
(*)
50 5.3 8.0 1.0 9.5 1.0 10.5
(**)
15 3.0 5.0 1.0 6.0 1.0 7.0
(**)
50 4.1 6.5 1.0 7.5 1.0 8.5
=3ns)
r=tf
= 25°C
T
A
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
Unit
ns
3/8
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