74V2G126
74V2G126
DUAL BUS BUFFER (3-STATE)
■HIGH SPEED: tPD = 3.8ns (TYP.) at VCC = 5V
■LOW POWER DISSIPATION: ICC = 1μA(MAX.) at TA=25°C
■HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.)
■POWER DOWN PROTECTION ON INPUTS AND OUTPUTS
■SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8mA (MIN) at VCC = 4.5V
■BALANCED PROPAGATION DELAYS: tPLH tPHL
■OPERATING VOLTAGE RANGE: VCC(OPR) = 2V to 5.5V
■IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74V2G126 is an advanced high-speed CMOS DUAL BUS BUFFER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS tecnology.
3-STATE control input nG has to be set LOW to place the output into the high impedance state. Power down protection is provided on all inputs and outputs and 0 to 7V can be accepted on
PIN CONNECTION AND IEC LOGIC SYMBOLS
SOT23-8L SOT323-8L
ORDER CODES
PACKAGE |
T & R |
SOT23-8L |
74V2G126STR |
SOT323-8L |
74V2G126CTR |
inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V systems and it is ideal for portable applications like personal digital assistant, camcorder and all battery-powered equipment.
All inputs and outputs are equipped with protection circuits against static discharge, giving them ESD immunity and transient excess voltage.
November 2001 |
1/11 |
74V2G126
INPUT EQUIVALENT CIRCUIT |
PIN DESCRIPTION |
|
|
|
PIN No |
SYMBOL |
NAME AND FUNCTION |
|
1, 7 |
1G, 2G |
Output Enable Inputs |
|
2, 5 |
1A, 2A |
Data Inputs |
|
3, 6 |
2Y, 1Y |
Data Outputs |
|
4 |
GND |
Ground (0V) |
|
8 |
VCC |
Positive Supply Voltage |
TRUTH TABLE
A |
G |
Y |
X |
L |
Z |
L |
H |
L |
H |
H |
H |
X: ºHº or ºLº |
|
|
Z: High Impedance |
|
|
ABSOLUTE MAXIMUM RATINGS
Symbol |
Parameter |
Value |
Unit |
VCC |
Supply Voltage |
-0.5 to +7.0 |
V |
VI |
DC Input Voltage |
-0.5 to +7.0 |
V |
VO |
DC Output Voltage (see note 1) |
-0.5 to +7.0 |
V |
VO |
DC Output Voltage (see note 2) |
-0.5 to VCC + 0.5 |
V |
IIK |
DC Input Diode Current |
− 20 |
mA |
IOK |
DC Output Diode Current |
− 20 |
mA |
IO |
DC Output Current |
± 25 |
mA |
ICC or IGND |
DC VCC or Ground Current |
± 50 |
mA |
Tstg |
Storage Temperature |
-65 to +150 |
°C |
TL |
Lead Temperature (10 sec) |
260 |
°C |
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied.
1)Vcc=0V or nG=Vcc(Output in High Impedence state)
2)High or Low State
RECOMMENDED OPERATING CONDITIONS
Symbol |
Parameter |
Value |
Unit |
|
VCC |
Supply Voltage |
2 to 5.5 |
V |
|
VI |
Input Voltage |
0 to 5.5 |
V |
|
VO |
Output Voltage (see note 1) |
0 to 5.5 |
V |
|
VO |
Output Voltage (see note 2) |
0 to VCC |
V |
|
Top |
Operating Temperature |
-55 to 125 |
°C |
|
dt/dv |
Input Rise and Fall Time (note 3) (VCC = 3.3 ± 0.3V) |
0 to 100 |
ns/V |
|
(VCC = 5.0 ± 0.5V) |
0 to 20 |
ns/V |
||
|
1)Vcc=0V or nG=Vcc (Output in High Impedence state)
2)High or Low State
3)VIN from 30% to 70% of VCC
2/11
74V2G126
DC SPECIFICATION
|
|
Test Condition |
Symbol |
Parameter |
VCC |
|
|
|
|
|
(V) |
VIH |
High Level Input |
|
Voltage |
VIL |
Low Level Input |
|
Voltage |
VOH |
High Level Ouput |
|
Voltage |
VOL |
Low Level Output |
|
Voltage |
IOZ |
High Impedance |
|
Output Leakage |
|
Current |
II |
Input Leakage |
|
Current |
IOPD |
Power down Output |
|
Leakage Current |
ICC |
Quiescent Supply |
|
Current |
2.0
3.0 to
5.5
2.0
3.0 to
5.5
2.0IO=-50 μA
3.0IO=-50 μA
4.5IO=-50 μA
3.0IO=-4 mA
4.5IO=-8 mA
2.0IO=50 μA
3.0IO=50 μA
4.5IO=50 μA
3.0IO=4 mA
4.5IO=8 mA
5.5 |
VI = VIH or VIL |
|
VO = 5.5 or GND |
||
|
||
0 to |
VI = 5.5V or GND |
|
5.5 |
||
|
||
0 |
VO = 5.5 |
|
5.5 |
VI = VCC or GND |
|
|
|
Value |
|
|
|
TA = 25°C |
-40 to 85°C |
-55 to 125°C |
Unit |
|
Min. Typ. Max. Min. Max. Min. Max. |
|
||||
1.5 |
|
|
1.5 |
1.5 |
|
0.7VCC |
|
0.7VCC |
0.7VCC |
V |
|
|
|
||||
|
|
0.5 |
0.5 |
0.5 |
|
|
|
0.3VCC |
0.3VCC |
0.3VCC |
V |
|
|
|
|||
1.9 |
2.0 |
|
1.9 |
1.9 |
|
2.9 |
3.0 |
|
2.9 |
2.9 |
|
4.4 |
4.5 |
|
4.4 |
4.4 |
V |
2.58 |
|
|
2.48 |
2.4 |
|
3.94 |
|
|
3.8 |
3.7 |
|
|
0.0 |
0.1 |
0.1 |
0.1 |
|
|
0.0 |
0.1 |
0.1 |
0.1 |
|
|
0.0 |
0.1 |
0.1 |
0.1 |
V |
|
|
0.36 |
0.44 |
0.55 |
|
|
|
0.36 |
0.44 |
0.55 |
|
|
|
±0.25 |
± 2.5 |
± 5 |
μA |
|
|
± 0.1 |
± 1 |
± 1 |
μA |
|
|
0.5 |
5 |
10 |
μA |
|
|
1 |
10 |
20 |
μA |
3/11
74V2G126
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3ns)
Symbol |
Parameter |
tPLH |
Propagation Delay |
tPHL |
Time |
tPLZ |
Output Disable |
tPHZ |
Time |
tPZL Output Enable
tPZH Time
(*) Voltage range is 3.3V ± 0.3V (**) Voltage range is 5.0V ± 0.5V
Test Condition |
|
|
Value |
|
|
|
||
VCC |
CL |
|
TA = 25°C |
|
-40 to 85°C |
-55 to 125°C Unit |
||
(V) |
(pF) |
|
Min. Typ. Max. Min. Max. Min. Max. |
|||||
|
|
|
||||||
3.3(*) |
15 |
|
5.1 |
7.5 |
1.0 |
8.5 |
1.0 |
9.5 |
3.3(*) |
50 |
|
5.6 |
8.0 |
1.0 |
9.5 |
1.0 |
10.5 |
5.0(**) |
|
|
|
|
|
|
|
ns |
15 |
|
3.8 |
5.5 |
1.0 |
6.5 |
1.0 |
7.5 |
|
5.0(**) |
50 |
|
4.3 |
6.5 |
1.0 |
7.5 |
1.0 |
8.5 |
3.3(*) |
15 |
RL = 1 KΩ |
5.4 |
8.0 |
1.0 |
9.0 |
1.0 |
10.0 |
3.3(*) |
50 |
RL = 1 KΩ |
7.9 |
11.5 |
1.0 |
12.5 |
1.0 |
13.5 |
5.0(**) |
|
RL = 1 KΩ |
|
|
|
|
|
ns |
15 |
3.6 |
5.0 |
1.0 |
6.0 |
1.0 |
7.0 |
||
5.0(**) |
50 |
RL = 1 KΩ |
5.1 |
7.0 |
1.0 |
8.0 |
1.0 |
9.0 |
3.3(*) |
15 |
RL = 1 KΩ |
5.4 |
7.6 |
1.0 |
9.5 |
1.0 |
10.5 |
3.3(*) |
|
RL = 1 KΩ |
|
|
|
|
|
ns |
50 |
5.9 |
8.5 |
1.0 |
10.0 |
1.0 |
11.0 |
||
5.0(**) |
15 |
RL = 1 KΩ |
3.7 |
5.9 |
1.0 |
7.0 |
1.0 |
8.0 |
5.0(**) |
50 |
RL = 1 KΩ |
4.1 |
6.5 |
1.0 |
7.5 |
1.0 |
8.5 |
CAPACITIVE CHARACTERISTICS
|
Test Condition |
|
|
Value |
|
|
Symbol |
Parameter |
TA = 25°C |
|
-40 to 85°C |
-55 to 125°C |
Unit |
|
|
Min. Typ. Max. Min. Max. Min. Max. |
|
|||
CIN |
Input Capacitance |
4 |
10 |
10 |
10 |
pF |
COUT |
Output |
6 |
|
|
|
pF |
|
Capacitance |
|
|
|
|
|
CPD |
Power Dissipation |
|
|
|
|
|
|
Capacitance |
14 |
|
|
|
pF |
(note 1)
1) CPD is defined as the value of the IC's internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/2
4/11