ST 74V2G126 User Manual

74V2G126

74V2G126

DUAL BUS BUFFER (3-STATE)

HIGH SPEED: tPD = 3.8ns (TYP.) at VCC = 5V

LOW POWER DISSIPATION: ICC = 1μA(MAX.) at TA=25°C

HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.)

POWER DOWN PROTECTION ON INPUTS AND OUTPUTS

SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8mA (MIN) at VCC = 4.5V

BALANCED PROPAGATION DELAYS: tPLH tPHL

OPERATING VOLTAGE RANGE: VCC(OPR) = 2V to 5.5V

IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The 74V2G126 is an advanced high-speed CMOS DUAL BUS BUFFER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS tecnology.

3-STATE control input nG has to be set LOW to place the output into the high impedance state. Power down protection is provided on all inputs and outputs and 0 to 7V can be accepted on

PIN CONNECTION AND IEC LOGIC SYMBOLS

SOT23-8L SOT323-8L

ORDER CODES

PACKAGE

T & R

SOT23-8L

74V2G126STR

SOT323-8L

74V2G126CTR

inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V systems and it is ideal for portable applications like personal digital assistant, camcorder and all battery-powered equipment.

All inputs and outputs are equipped with protection circuits against static discharge, giving them ESD immunity and transient excess voltage.

November 2001

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ST 74V2G126 User Manual

74V2G126

INPUT EQUIVALENT CIRCUIT

PIN DESCRIPTION

 

 

PIN No

SYMBOL

NAME AND FUNCTION

 

1, 7

1G, 2G

Output Enable Inputs

 

2, 5

1A, 2A

Data Inputs

 

3, 6

2Y, 1Y

Data Outputs

 

4

GND

Ground (0V)

 

8

VCC

Positive Supply Voltage

TRUTH TABLE

A

G

Y

X

L

Z

L

H

L

H

H

H

X: ºHº or ºLº

 

 

Z: High Impedance

 

 

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VCC

Supply Voltage

-0.5 to +7.0

V

VI

DC Input Voltage

-0.5 to +7.0

V

VO

DC Output Voltage (see note 1)

-0.5 to +7.0

V

VO

DC Output Voltage (see note 2)

-0.5 to VCC + 0.5

V

IIK

DC Input Diode Current

20

mA

IOK

DC Output Diode Current

20

mA

IO

DC Output Current

± 25

mA

ICC or IGND

DC VCC or Ground Current

± 50

mA

Tstg

Storage Temperature

-65 to +150

°C

TL

Lead Temperature (10 sec)

260

°C

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied.

1)Vcc=0V or nG=Vcc(Output in High Impedence state)

2)High or Low State

RECOMMENDED OPERATING CONDITIONS

Symbol

Parameter

Value

Unit

VCC

Supply Voltage

2 to 5.5

V

VI

Input Voltage

0 to 5.5

V

VO

Output Voltage (see note 1)

0 to 5.5

V

VO

Output Voltage (see note 2)

0 to VCC

V

Top

Operating Temperature

-55 to 125

°C

dt/dv

Input Rise and Fall Time (note 3) (VCC = 3.3 ± 0.3V)

0 to 100

ns/V

(VCC = 5.0 ± 0.5V)

0 to 20

ns/V

 

1)Vcc=0V or nG=Vcc (Output in High Impedence state)

2)High or Low State

3)VIN from 30% to 70% of VCC

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74V2G126

DC SPECIFICATION

 

 

Test Condition

Symbol

Parameter

VCC

 

 

 

 

(V)

VIH

High Level Input

 

Voltage

VIL

Low Level Input

 

Voltage

VOH

High Level Ouput

 

Voltage

VOL

Low Level Output

 

Voltage

IOZ

High Impedance

 

Output Leakage

 

Current

II

Input Leakage

 

Current

IOPD

Power down Output

 

Leakage Current

ICC

Quiescent Supply

 

Current

2.0

3.0 to

5.5

2.0

3.0 to

5.5

2.0IO=-50 μA

3.0IO=-50 μA

4.5IO=-50 μA

3.0IO=-4 mA

4.5IO=-8 mA

2.0IO=50 μA

3.0IO=50 μA

4.5IO=50 μA

3.0IO=4 mA

4.5IO=8 mA

5.5

VI = VIH or VIL

VO = 5.5 or GND

 

0 to

VI = 5.5V or GND

5.5

 

0

VO = 5.5

5.5

VI = VCC or GND

 

 

 

Value

 

 

 

TA = 25°C

-40 to 85°C

-55 to 125°C

Unit

Min. Typ. Max. Min. Max. Min. Max.

 

1.5

 

 

1.5

1.5

 

0.7VCC

 

0.7VCC

0.7VCC

V

 

 

 

 

0.5

0.5

0.5

 

 

 

0.3VCC

0.3VCC

0.3VCC

V

 

 

 

1.9

2.0

 

1.9

1.9

 

2.9

3.0

 

2.9

2.9

 

4.4

4.5

 

4.4

4.4

V

2.58

 

 

2.48

2.4

 

3.94

 

 

3.8

3.7

 

 

0.0

0.1

0.1

0.1

 

 

0.0

0.1

0.1

0.1

 

 

0.0

0.1

0.1

0.1

V

 

 

0.36

0.44

0.55

 

 

 

0.36

0.44

0.55

 

 

 

±0.25

± 2.5

± 5

μA

 

 

± 0.1

± 1

± 1

μA

 

 

0.5

5

10

μA

 

 

1

10

20

μA

3/11

74V2G126

AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3ns)

Symbol

Parameter

tPLH

Propagation Delay

tPHL

Time

tPLZ

Output Disable

tPHZ

Time

tPZL Output Enable

tPZH Time

(*) Voltage range is 3.3V ± 0.3V (**) Voltage range is 5.0V ± 0.5V

Test Condition

 

 

Value

 

 

 

VCC

CL

 

TA = 25°C

 

-40 to 85°C

-55 to 125°C Unit

(V)

(pF)

 

Min. Typ. Max. Min. Max. Min. Max.

 

 

 

3.3(*)

15

 

5.1

7.5

1.0

8.5

1.0

9.5

3.3(*)

50

 

5.6

8.0

1.0

9.5

1.0

10.5

5.0(**)

 

 

 

 

 

 

 

ns

15

 

3.8

5.5

1.0

6.5

1.0

7.5

5.0(**)

50

 

4.3

6.5

1.0

7.5

1.0

8.5

3.3(*)

15

RL = 1 KΩ

5.4

8.0

1.0

9.0

1.0

10.0

3.3(*)

50

RL = 1 KΩ

7.9

11.5

1.0

12.5

1.0

13.5

5.0(**)

 

RL = 1 KΩ

 

 

 

 

 

ns

15

3.6

5.0

1.0

6.0

1.0

7.0

5.0(**)

50

RL = 1 KΩ

5.1

7.0

1.0

8.0

1.0

9.0

3.3(*)

15

RL = 1 KΩ

5.4

7.6

1.0

9.5

1.0

10.5

3.3(*)

 

RL = 1 KΩ

 

 

 

 

 

ns

50

5.9

8.5

1.0

10.0

1.0

11.0

5.0(**)

15

RL = 1 KΩ

3.7

5.9

1.0

7.0

1.0

8.0

5.0(**)

50

RL = 1 KΩ

4.1

6.5

1.0

7.5

1.0

8.5

CAPACITIVE CHARACTERISTICS

 

Test Condition

 

 

Value

 

 

Symbol

Parameter

TA = 25°C

 

-40 to 85°C

-55 to 125°C

Unit

 

 

Min. Typ. Max. Min. Max. Min. Max.

 

CIN

Input Capacitance

4

10

10

10

pF

COUT

Output

6

 

 

 

pF

 

Capacitance

 

 

 

 

 

CPD

Power Dissipation

 

 

 

 

 

 

Capacitance

14

 

 

 

pF

(note 1)

1) CPD is defined as the value of the IC's internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/2

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