ST 74V2G126 User Manual

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74V2G126

DUAL BUS BUFFER (3-STATE)

■ HIGH SPEED: t

■ LOW POWER DISSIPATION:

= 3.8ns (TYP.) at VCC=5V

PD

ICC=1µA(MAX.) at TA=25°C

■ HIGH NOISE IMMUNITY:

V

NIH=VNIL

■ POWER DOWNPROTECTION ON INPUTS

= 28% VCC(MIN.)

AND OUTPUTS

■ SYMMETRICAL OUTPUT IMPEDANCE:

|IOH|=IOL= 8mA (MIN) at VCC= 4.5V

■ BALANCED PROPAGATION DELAYS:

t

≅ t

PLH

■ OPERATING VOLTAGE RANGE:

PHL

VCC(OPR) = 2V to 5.5V

■ IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The 74V2G126 is anadvancedhigh-speed CMOS
DUAL BUS BUFFER fabricated with sub-micron
silicon gate and double-layer metal wiring C2MOS
tecnology.
3-STATE control input nG has to be set LOW to
place the output into the high impedance state.
Power down protection is provided on all inputs
and outputs and 0 to 7V can be accepted on

SOT23-8L SOT323-8L

ORDER CODES

PACKAGE T & R

SOT23-8L 74V2G126STR

SOT323-8L 74V2G126CTR

inputs with no regard to the supply voltage. This
device can be used to interface 5V to 3V systems
and it is ideal for portable applications like
personal digital assistant, camcorder and all
battery-powered equipment.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them ESD immunity and transient excess voltage.

PIN CONNECTION AND IEC LOGIC SYMBOLS

1/11November 2001

74V2G126

INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

PIN No SYMBOL NAME AND FUNCTION

1, 7 1G, 2G Output Enable Inputs
2, 5 1A, 2A Data Inputs
3, 6 2Y, 1Y Data Outputs

4 GND Ground (0V)
8

TRUTH TABLE

AGY

XLZ

LHL

HHH

X: ”H” or ”L”
Z: High Impedance

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V
V
V

I

I

OK

I

or I

I

CC

T

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.

1) Vcc=0V or nG=Vcc(Output in High Impedence state)

2) High or Low State

Supply Voltage

CC

DC Input Voltage

I

DC Output Voltage (see note 1)

O

DC Output Voltage (see note 2) -0.5 to VCC+ 0.5

O

DC Input Diode Current

IK

DC Output Diode Current
DC Output Current

O

DC VCCor Ground Current

GND

Storage Temperature

stg

Lead Temperature (10 sec)

L

V

CC

Positive Supply Voltage

-0.5 to +7.0 V

-0.5 to +7.0 V

-0.5 to +7.0 V

− 20 mA

− 20 mA

± 25 mA
± 50 mA

-65 to +150 °C
260 °C

V

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

V

V
V
V

T

dt/dv

1) Vcc=0V or nG=Vcc (Output in High Impedence state)

2) High or Low State
from 30% to 70% of V

3) V

IN

2/11

Supply Voltage

CC

Input Voltage

I

Output Voltage (see note 1)

O

Output Voltage (see note 2) 0 to V

O

Operating Temperature

op

(V

CC

CC

= 3.3 ± 0.3V)

= 5.0 ± 0.5V)

Input Rise and Fall Time (note 3) (V

CC

2 to 5.5 V
0 to 5.5 V
0 to 5.5 V

CC

-55 to 125 °C
0 to 100

0to20

V

ns/V
ns/V

DC SPECIFICATION

Symbol Parameter

V

V

V

V

I

I

OPD

I

High Level Input

IH

Voltage

Low Level Input

IL

Voltage

High Level Ouput

OH

Voltage

Low Level Output

OL

Voltage

High Impedance

OZ

Output Leakage
Current

I

Input Leakage

I

Current
Power downOutput

Leakage Current
Quiescent Supply

CC

Current

Test Condition Value

V

(V)

CC

T

A

Min. Typ. Max. Min. Max. Min. Max.

-40 to 85°C -55 to 125°C

=25°C

2.0 1.5 1.5 1.5

3.0 to

5.5

0.7V

CC

0.7V

CC

0.7V

CC

2.0 0.5 0.5 0.5

3.0 to

5.5

2.0

3.0

4.5

3.0

4.5

2.0

3.0

4.5

3.0

4.5

5.5

0to

5.5
0

5.5

IO=-50 µA

=-50 µA

I

O

I

=-50 µA

O

=-4mA

I

O

=-8mA

I

O

I

=50 µA

O

=50 µA

I

O

I

=50 µA

O

=4 mA

I

O

I

=8 mA

O

I=VIH

orV

IL

V

VO= 5.5 or GND

V

= 5.5V or GND

I

V

= 5.5

O

V

I=VCC

or GND

1.9 2.0 1.9 1.9

2.9 3.0 2.9 2.9

4.4 4.5 4.4 4.4

2.58 2.48 2.4

3.94 3.8 3.7

0.3V

CC

0.3V

CC

0.0 0.1 0.1 0.1

0.0 0.1 0.1 0.1

0.0 0.1 0.1 0.1

0.36 0.44 0.55

0.36 0.44 0.55

±0.25 ± 2.5 ± 5 µA

± 0.1 ± 1 ± 1 µA

0.5 5 10 µA

11020µA

74V2G126

Unit

V

CC

V

V

V

0.3V

3/11

74V2G126

AC ELECTRICAL CHARACTERISTICS (Input tr=tf= 3ns)

Test Condition Value

Symbol Parameter

t

PLH

t

PHL

t
t

PHZ

t
t

PZH

(*) Voltage range is 3.3V ± 0.3V
(**) Voltage range is 5.0V ± 0.5V

Propagation Delay
Time

Output Disable

PLZ

Time

Output Enable

PZL

Time

3.3

3.3

5.0

5.0

3.3

3.3

5.0

5.0

3.3

3.3

5.0

5.0

C

V

CC

(V)

L

(pF)

(*)

15 5.1 7.5 1.0 8.5 1.0 9.5

(*)

50 5.6 8.0 1.0 9.5 1.0 10.5

(**)

15 3.8 5.5 1.0 6.5 1.0 7.5

(**)

50 4.3 6.5 1.0 7.5 1.0 8.5

(*)

15 RL=1KΩ 5.4 8.0 1.0 9.0 1.0 10.0

(*)
(**)
(**)

(*)

(*)
(**)
(**)

R

50
15
50

L

R

L

R

L

=1KΩ
=1KΩ
=1KΩ

15 RL=1KΩ 5.4 7.6 1.0 9.5 1.0 10.5

R

50
15
50

L

R

L

R

L

=1KΩ
=1KΩ
=1KΩ

Min. Typ. Max. Min. Max. Min. Max.

=25°C

T

A

-40 to 85°C -55 to 125°C

7.9 11.5 1.0 12.5 1.0 13.5

3.6 5.0 1.0 6.0 1.0 7.0

5.1 7.0 1.0 8.0 1.0 9.0

5.9 8.5 1.0 10.0 1.0 11.0

3.7 5.9 1.0 7.0 1.0 8.0

4.1 6.5 1.0 7.5 1.0 8.5

Unit

ns

ns

ns

CAPACITIVE CHARACTERISTICS

Test Condition Value

T

Symbol Parameter

C

C

C

Input Capacitance

IN

Output

OUT

Capacitance
Power Dissipation

PD

Capacitance
(note 1)

1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average current can be obtained by the following equation. I

=25°C

A

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

4101010pF
6pF

14 pF

CC(opr)=CPDxVCCxfIN+ICC

/2

Unit

4/11