ST 74V2G08 User Manual

74V2G08

74V2G08

DUAL 2-INPUT AND GATE

■HIGH SPEED: tPD = 3.8ns (TYP.) at VCC = 5V

■LOW POWER DISSIPATION: ICC = 1μA(MAX.) at TA = 25°C

■HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.)

■POWER DOWN PROTECTION ON INPUTS

■SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8mA (MIN) at VCC = 4.5V

■BALANCED PROPAGATION DELAYS: tPLH tPHL

■OPERATING VOLTAGE RANGE: VCC(OPR) = 2V to 5.5V

■IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The 74V2G08 is an advanced high-speed CMOS DUAL 2-INPUT AND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology.

	SOT23-8L
ORDER CODES
PACKAGE		T & R
SOT23-8L		74V2G08STR

The internal circuit is composed of 2 stages including buffer output, which provide high noise immunity and stable output.

Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V.

PIN CONNECTION AND IEC LOGIC SYMBOLS

June 2003

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74V2G08

INPUT EQUIVALENT CIRCUIT	PIN DESCRIPTION
	PIN No	SYMBOL	NAME QND FUNCTION
	1, 5	1A, 2A	Data Input
	2, 6	1B, 2B	Data Input
	7, 3	1Y, 2Y	Data Output
	4	GND	Ground (0V)
	8	VCC	Positive Supply Voltage

TRUTH TABLE

A	B	Y
L	L	L
L	H	L
H	L	L
H	H	H

ABSOLUTE MAXIMUM RATINGS

Symbol	Parameter	Value	Unit
VCC	Supply Voltage	-0.5 to +7.0	V
VI	DC Input Voltage	-0.5 to +7.0	V
VO	DC Output Voltage	-0.5 to VCC + 0.5	V
IIK	DC Input Diode Current	- 20	mA
IOK	DC Output Diode Current	± 20	mA
IO	DC Output Current	± 25	mA
ICC or IGND	DC VCC or Ground Current	± 50	mA
Tstg	Storage Temperature	-65 to +150	°C
TL	Lead Temperature (10 sec)	260	°C

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied.

RECOMMENDED OPERATING CONDITIONS

	Symbol	Parameter	Value	Unit
	VCC	Supply Voltage	2 to 5.5	V
	VI	Input Voltage	0 to 5.5	V
	VO	Output Voltage	0 to VCC	V
	Top	Operating Temperature	-55 to 125	°C
	dt/dv	Input Rise and Fall Time (note 1) (VCC = 3.3 ± 0.3V)	0 to 100	ns/V
		(VCC = 5.0 ± 0.5V)	0 to 20	ns/V

1) VIN from 30% to 70% of VCC

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74V2G08

DC SPECIFICATIONS

			Test Condition						Value
Symbol	Parameter	VCC				TA = 25°C			-40 to 85°C		-55 to 125°C		Unit
		(V)			Min.		Typ.	Max.	Min.	Max.	Min.	Max.
VIH	High Level Input	2.0			1.5				1.5		1.5
	Voltage	3.0 to			0.7VCC				0.7VCC		0.7VCC		V
		5.5
VIL	Low Level Input	2.0						0.5		0.5		0.5
	Voltage	3.0 to						0.3VCC		0.3VCC		0.3VCC	V
		5.5
VOH	High Level Output	2.0		IO=-50 μA	1.9		2.0		1.9		1.9
	Voltage
		3.0		IO=-50 μA	2.9		3.0		2.9		2.9
		4.5		IO=-50 μA	4.4		4.5		4.4		4.4		V
		3.0		IO=-4 mA	2.58				2.48		2.4
		4.5		IO=-8 mA	3.94				3.8		3.7
VOL	Low Level Output	2.0		IO=50 μA			0.0	0.1		0.1		0.1
	Voltage
		3.0		IO=50 μA			0.0	0.1		0.1		0.1
		4.5		IO=50 μA			0.0	0.1		0.1		0.1	V
		3.0		IO=4 mA				0.36		0.44		0.55
		4.5		IO=8 mA				0.36		0.44		0.55
II	Input Leakage	0 to		VI = 5.5V or GND				± 0.1		± 1		± 1	μA
	Current	5.5
ICC	Quiescent Supply	5.5		VI = VCC or GND				1		10		20	μA
	Current

AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3ns)

		Test Condition							Value
Symbol	Parameter	VCC	CL		TA = 25°C				-40 to 85°C		-55 to 125°C		Unit
		(V)	(pF)		Min.	Typ.	Max.		Min.	Max.	Min.	Max.
tPLH tPHL	Propagation Delay	3.3(*)	15			5.2		7.5	1.0	9.0	1.0	10.0
	Time
		3.3(*)	50			5.8		8.5	1.0	10.0	1.0	11.0	ns
		5.0(**)	15			3.8		5.9	1.0	7.0	1.0	8.0
		5.0(**)	50			4.6		7.0	1.0	8.0	1.0	9.0

(*) Voltage range is 3.3V ± 0.3V (**) Voltage range is 5.0V ± 0.5V

CAPACITIVE CHARACTERISTICS

		Test Condition					Value
Symbol	Parameter		TA = 25°C				-40 to 85°C		-55 to 125°C		Unit
			Min.	Typ.	Max.		Min.	Max.	Min.	Max.
CIN	Input Capacitance			4		10		10		10	pF
CPD	Power Dissipation
	Capacitance			10							pF
	(note 1)

1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/2

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