ST 74V2G00 User Manual
74V2G00
74V2G00
DUAL 2-INPUT NAND GATE
■HIGH SPEED: tPD = 3.7 ns (TYP.) at VCC = 5V
■LOW POWER DISSIPATION: ICC = 1 μA (MAX.) at TA = 25 oC
■HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.)
■POWER DOWN PROTECTION ON INPUTS AND OUTPUTS
■SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8 mA (MIN)
■BALANCED PROPAGATION DELAYS:
tPLH tPHL
■OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 5.5V
■IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74V2G00 is an advanced high-speed CMOS DUAL 2-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal
PIN CONNECTION AND IEC LOGIC SYMBOLS
SOT23-8L
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ORDER CODES |
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PACKAGE |
T UBE |
T & R |
SOT23-8L |
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74V2G00STR |
wiring C2MOS technology.
The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output.
Power down protection is provided on all inputs and outputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V.
June 2000 |
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74V2G00
INPUT EQUIVALENT CIRCUIT |
PIN DESCRIPTION |
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PI N No |
SYMBOL |
NAME AND FUNCT ION |
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1, 5 |
1A, 2A |
Data Input |
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2, 6 |
1B, 2B |
Data Input |
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7, 3 |
1Y, 2Y |
Data Output |
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4 |
GND |
Ground (0V) |
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8 |
VCC |
Positive Supply Voltage |
TRUTH TABLE
A |
B |
Y |
L |
L |
H |
L |
H |
H |
H |
L |
H |
H |
H |
L |
ABSOLUTE MAXIMUM RATINGS
Symbol |
Parameter |
Val ue |
Unit |
VCC |
Supply Voltage |
-0.5 to +7.0 |
V |
VI |
DC Input Voltage |
-0.5 to +7.0 |
V |
VO |
DC Output Voltage (see note 1) |
-0.5 to +7.0 |
V |
VO |
DC Output Voltage (see note 2) |
-0.5 to VCC + 0.5 |
V |
IIK |
DC Input Diode Current |
- 20 |
mA |
IOK |
DC Output Diode Current |
± 20 |
mA |
IO |
DC Output Current |
± 25 |
mA |
ICC or IGND |
DC VCC or Ground Current |
± 50 |
mA |
Tstg |
Storage Temperature |
-65 to +150 |
oC |
TL |
Lead Temperature (10 sec) |
260 |
oC |
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.
1)VCC =0V
2)High or Low State
RECOMMENDED OPERATING CONDITIONS
Symbol |
Parameter |
Valu e |
Uni t |
VCC |
Supply Voltage |
2.0 to 5.5 |
V |
VI |
Input Voltage |
0 to 5.5 |
V |
VO |
Output Voltage (see note 1) |
0 to 5.5 |
V |
VO |
Output Voltage (see note 2) |
0 to VCC |
V |
Top |
Operating Temperature |
-40 to +85 |
oC |
dt/dv |
Input Rise and Fall Time (see note 3) (VCC = 3.3 ± 0.3V) |
0 to 100 |
ns/V |
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(V CC = 5.0 ± 0.5V) |
0 to 20 |
ns/V |
1)VCC =0V
2)High or Low State
3)VIN from 30% to70%of VCC
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74V2G00 |
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DC SPECIFICATIONS |
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Symb ol |
Parameter |
T est Cond ition s |
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Val ue |
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Un it |
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VCC |
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TA = 25 oC |
-40 to 85 oC |
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(V) |
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Min. Typ . Max. Min . Max. |
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VIH |
High Level Input |
2.0 |
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1.5 |
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1.5 |
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V |
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Voltage |
3.0 to 5.5 |
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0.7VCC |
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0.7VCC |
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VIL |
Low Level Input |
2.0 |
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0.5 |
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0.5 |
V |
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Voltage |
3.0 to 5.5 |
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0.3VCC |
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0.3VCC |
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VOH |
High Level Output |
2.0 |
IO=-50 μA |
1.9 |
2.0 |
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1.9 |
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Voltage |
3.0 |
IO=-50 μA |
2.9 |
3.0 |
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2.9 |
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V |
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4.5 |
IO=-50 μA |
4.4 |
4.5 |
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4.4 |
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3.0 |
IO=-4 mA |
2.58 |
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2.48 |
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4.5 |
IO=-8 mA |
3.94 |
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3.8 |
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VOL |
Low Level Output |
2.0 |
IO=50 μA |
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0.0 |
0.1 |
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0.1 |
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Voltage |
3.0 |
IO=50 μA |
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0.0 |
0.1 |
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0.1 |
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V |
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4.5 |
IO=50 μA |
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0.0 |
0.1 |
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0.1 |
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3.0 |
IO=4 mA |
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0.36 |
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0.44 |
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4.5 |
IO=8 mA |
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0.36 |
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0.44 |
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II |
Input Leakage Current |
0 to 5.5 |
VI = 5.5V or GND |
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±0.1 |
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±1.0 |
μA |
ICC |
Quiescent Supply |
5.5 |
VI = VCC or GND |
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1 |
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10 |
μA |
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Current |
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IOPD |
Output Leakage |
0 |
VOUT = 5.5V |
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0.5 |
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5.0 |
μA |
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Current |
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AC ELECTRICAL CHARACTERISTICS (Input tr = tf =3 ns) |
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Symb ol |
Parameter |
Test Co nditi on |
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Val ue |
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Un it |
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VCC |
CL |
TA = 25 oC |
-40 to 85 oC |
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(V) |
(pF ) |
Min. Typ . Max. |
Min . Max. |
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tPLH |
Propagation Delay |
3.3(*) |
15 |
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5.5 |
7.9 |
1.0 |
9.5 |
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tPHL |
Time |
3.3(*) |
50 |
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8.0 |
11.4 |
1.0 |
13.0 |
ns |
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5.0(**) |
15 |
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3.7 |
5.5 |
1.0 |
6.5 |
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5.0(**) |
50 |
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5.2 |
7.5 |
1.0 |
8.5 |
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(*) Voltage range is 3.3V ± 0.3V |
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(**) Voltage range is 5V ± 0.5V |
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CAPACITIVE CHARACTERISTICS |
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Symb ol |
Parameter |
T est Cond ition s |
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Val ue |
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Un it |
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TA = 25 oC |
-40 to 85 oC |
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Min. |
Typ . |
Max. Min . Max. |
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CIN |
Input Capacitance |
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4 |
10 |
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10 |
pF |
CPD |
Power Dissipation |
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19 |
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pF |
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Capacitance (note 1) |
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1) CPD isdefined as the value of the IC'sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto Test Circuit).Average operating current can be obtained by the following equation. ICC(opr) = CPD •VCC •fIN + ICC/2
3/6
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