ST 74V2G00 User Manual
查询74V2G00供应商
■ HIGHSPEED:t
■
LOW POWER DISSIPATION:
I
=1 µA (MAX.)at TA=25oC
CC
■
HIGHNOISEIMMUNITY:
V
NIH=VNIL
■ POWERDOWNPROTECTIONON INPUTS
=28%VCC(MIN.)
=3.7ns(TYP.)atVCC=5V
PD
ANDOUTPUTS
■ SYMMETRICALOUTPUTIMPEDANCE:
|I
|=IOL=8 mA(MIN)
OH
■ BALANCEDPROPAGATIONDELAYS:
t
≅ t
PLH
PHL
■
OPERATINGVOLTAGERANGE:
V
(OPR)= 2Vto 5.5V
CC
■ IMPROVEDLATCH-UPIMMUNITY
DESCRIPTION
The 74V2G00 is an advanced high-speed CMOS
DUAL 2-INPUT NAND GATE fabricated with
sub-micron silicon gate and double-layer metal
74V2G00
DUAL 2-INPUT NAND GATE
SOT23-8L
ORDER CODES
PACKAGE TUBE T & R
SOT23-8L 74V2G00STR
wiringC
The internal circuit is composed of 3 stages
including buffer output, which provide high noise
immunityand stable output.
Power down protection is provided on all inputs
and outputs and 0 to 7V can be accepted on
inputs with no regard to the supply voltage. This
devicecan be used to interface5V to 3V.
2
MOS technology.
PIN CONNECTION AND IEC LOGICSYMBOLS
June 2000
1/6
74V2G00
INPUT EQUIVALENTCIRCUIT
PIN DESCRIPTION
PI N No SYMB OL NAME AND F U NCTIO N
1, 5 1A, 2A Data Input
2, 6 1B, 2B Data Input
7, 3 1Y, 2Y Data Output
4 GND Ground (0V)
8V
CC
Positive Supply Voltage
TRUTH TABLE
ABY
LLH
LHH
HLH
HHL
ABSOLUTE MAXIMUM RATINGS
Symb o l Para met er Val u e Uni t
V
V
V
V
I
I
OK
I
or I
I
CC
T
T
AbsoluteMaximumRatingsarethosevaluesbeyondwhichdamageto thedevicemayoccur.Functionaloperation underthesecondition isnotimplied.
=0V
1)V
CC
2)HighorLowState
Supply Voltage -0.5 to +7.0 V
CC
DC Input Voltage -0.5 to +7.0 V
I
DC Output Voltage (see note 1) -0.5 to +7.0 V
O
DC Output Voltage (see note 2) -0.5 to VCC+ 0.5 V
O
DC Input Diode Current - 20 mA
IK
DC Output Diode Current ± 20 mA
DC Output Current ± 25 mA
O
DC VCCor Ground Current ± 50 mA
GND
Storage Temperature -65 to +150
stg
Lead Temperature (10 sec) 260
L
o
C
o
C
RECOMMENDED OPERATING CONDITIONS
Symb o l Para met er Value Un it
V
V
V
V
T
dt/dv
1)VCC=0V
2)HighorLowState
from30%to70%of V
3)V
IN
2/6
Supply Voltage 2.0 to 5.5 V
CC
Input Voltage 0 to 5.5 V
I
Output Voltage (see note 1) 0 to 5.5 V
O
Output Voltage (see note 2) 0 to V
O
Operating Temperature -40 to +85
op
(V
CC
CC
=3.3±0.3V)
=5.0±0.5V)
Input Rise and Fall Time (see note 3) (V
CC
CC
0 to 100
0to20
V
o
C
ns/V
ns/V
74V2G00
DC SPECIFICATIONS
Symb o l Para met er Test Condit i o ns Val u e Uni t
T
=25oC -40 to 85oC
A
CC
0.7V
CC
CC
0.3V
CC
V
V
V
V
I
I
OPD
V
CC
(V)
High Level Input
IH
Voltage
Low Level Input
IL
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
Input Leakage Current 0 to 5.5 VI= 5.5V or GND ±0.1 ±1.0 µA
I
I
Quiescent Supply
CC
2.0 1.5 1.5
3.0 to 5.5 0.7V
2.0 0.5 0.5
3.0 to 5.5 0.3V
2.0 IO=-50 µA 1.9 2.0 1.9
3.0 I
4.5 I
3.0 I
4.5 I
=-50µA 2.9 3.0 2.9
O
=-50µA 4.4 4.5 4.4
O
=-4 mA 2.58 2.48
O
=-8 mA 3.94 3.8
O
2.0 IO=50 µ A 0.0 0.1 0.1
3.0 I
4.5 I
3.0 I
4.5 I
=50µA 0.0 0.1 0.1
O
=50µA 0.0 0.1 0.1
O
=4 mA 0.36 0.44
O
=8 mA 0.36 0.44
O
5.5 VI=VCCorGND 1 10 µA
Min. Typ. Max. Min. Max.
Current
Output Leakage
0V
= 5.5V 0.5 5.0 µA
OUT
Current
V
V
V
V
AC ELECTRICAL CHARACTERISTICS
(Inputt
r=tf
=3 ns)
Symbol Parameter Test Condition Value Unit
t
Propagation Delay
PLH
t
Time
PHL
(*) Voltagerangeis3.3V±0.3V
(**) Voltagerangeis 5V± 0.5V
V
3.3
3.3
5.0
5.0
CC
(V)
(**)
(**)
C
L
(pF)
(*)
(*)
15 5.5 7.9 1.0 9.5
50 8.0 11.4 1.0 13.0
T
=25oC -40 to 85oC
A
Min. Typ. Max. Min. Max.
ns
15 3.7 5.5 1.0 6.5
50 5.2 7.5 1.0 8.5
CAPACITIVE CHARACTERISTICS
Symb o l Para met er Test Condit i o ns Val u e Uni t
=25oC -40 to 85oC
T
A
Min. Typ. Max. Min. Max.
Input Capacitance 4 10 10 pF
C
IN
Power Dissipation
C
PD
Capacitance (note 1)
1)CPDisdefined asthevalue oftheIC’sinternal equivalentcapacitance whichiscalculatedfromtheoperating currentconsumption without load. (Referto
TestCircuit).Average operatingcurrent canbeobtained bythefollowingequation. I
(opr)= C
CC
19 pF
•
•
f
IN+ICC
/2
V
PD
CC
3/6
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