ST 74V1T70 User Manual

74V1T70

■HIGH SPEED: tPD = 5.5 ns (TYP.) at VCC = 5V

■LOW POWER DISSIPATION: ICC = 1 μA (MAX.) at TA = 25 oC

■COMPATIBLE WITH TTL OUTPUTS: VIH = 2V (MIN), VIL = 0.8V (MAX)

■POWER DOWN PROTECTION ON INPUT

■SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8 mA (MIN)

■BALANCED PROPAGATION DELAYS:

tPLH tPHL

■OPERATING VOLTAGE RANGE: VCC (OPR) = 4.5V to 5.5V

■IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The 74V1T70 is an advanced high-speed CMOS SINGLE BUFFER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology.

PIN CONNECTION AND IEC LOGIC SYMBOLS

74V1T70

SINGLE BUFFER

PRELIMINARY DATA

S	C
(SOT23-5L)	(SC-70)

ORDER CODE:

74V1T70S 74V1T70C

The internal circuit is composed of 2 stages including buffer output, which provide high noise immunity and stable output.

Power down protection is provided on input and 0 to 7V can be accepted on input with no regard to the supply voltage. This device can be used to interface 5V to 3V.

October 1999

1/7

74V1T70

INPUT EQUIVALENT CIRCUIT	PIN DESCRIPTION
	PI N No	SYMBOL	NAME AND FUNCT ION
	1	N.C.	Not Connected
	2	1A	Data Input
	4	1Y	Data Output
	3	GND	Ground (0V)
	5	VCC	Positive Supply Voltage

	TRUTH TABLE
	A		Y
	L		L
	H		H
ABSOLUTE MAXIMUM RATINGS
Symbol	Parameter	Val ue	Unit
VCC	Supply Voltage	-0.5 to +7.0	V
VI	DC Input Voltage	-0.5 to +7.0	V
VO	DC Output Voltage	-0.5 to VCC + 0.5	V
IIK	DC Input Diode Current	- 20	mA
IOK	DC Output Diode Current	± 20	mA
IO	DC Output Current	± 25	mA
ICC or IGND	DC VCC or Ground Current	± 50	mA
Tstg	Storage Temperature	-65 to +150	oC
TL	Lead Temperature (10 sec)	260	oC

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.

RECOMMENDED OPERATING CONDITIONS

Symbol	Parameter	Valu e	Uni t
VCC	Supply Voltage	4.5 to 5.5	V
VI	Input Voltage	0 to 5.5	V
VO	Output Voltage	0 to VCC	V
Top	Operating Temperature	-40 to +85	oC
dt/dv	Input Rise and Fall Time (see note 1) (VCC = 5.0 ± 0.5V)	0 to 20	ns/V

1)VIN from0.8V to 2 V

2/7

								74V1T70
DC SPECIFICATIONS
Symb ol	Parameter	T est Cond ition s				Val ue			Un it
		VCC		TA = 25 oC			-40 to 85 oC
		(V)		Min.	Typ .	Max. Min . Max.
VIH	High Level Input	4.5 to 5.5		2			2		V
	Voltage
VIL	Low Level Input	4.5 to 5.5				0.8		0.8	V
	Voltage
VOH	High Level Output	4.5	IO=-50 μA	4.4	4.5		4.4		V
	Voltage	4.5	IO=-8 mA	3.94			3.8
VOL	Low Level Output	4.5	IO=50 μA		0.0	0.1		0.1	V
	Voltage	4.5	IO=8 mA			0.36		0.44
II	Input Leakage Current	0 to 5.5	VI = 5.5V or GND			±0.1		±1.0	μA
ICC	Quiescent Supply	5.5	VI = VCC or GND			1		10	μA
	Current
ICC	Additional Worst Case	5.5	One Input at 3.4V,			1.35		1.5	mA
	Supply Current		other input at VCC or
			GND
AC ELECTRICAL CHARACTERISTICS (Input tr = tf =3 ns)
Symb ol	Parameter	Test Co nditi on				Val ue			Un it
		VCC (*)	CL	TA = 25 oC			-40 to 85 oC
		(V)	(pF )	Min. Typ . Max.			Min . Max.
tPLH	Propagation Delay	5.0	15		4.7	6.7	1.0	7.5	ns
tPHL	Time	5.0	50		5.5	7.7	1.0	8.5
(*)Voltage range is 5V ± 0.5V
CAPACITIVE CHARACTERISTICS
Symb ol	Parameter	T est Cond ition s				Val ue			Un it
				TA = 25 oC			-40 to 85 oC
				Min.	Typ .	Max. Min . Max.
CIN	Input Capacitance				4	10		10	pF
CPD	Power Dissipation				11				pF
	Capacitance (note 1)

1) CPD isdefined as the value of the IC'sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto Test Circuit).Average operating current can be obtained by the following equation. ICC(opr) = CPD •VCC •fIN + ICC

3/7