ST 74V1T66 User Manual

■ HIGH SPEED:

t

= 0.3ns (TYP.) at VCC=5V

PD

■ LOW POWER DISSIPATION:

I

=1µA(MAX.) at TA=25°C

CC

■ LOW "ON" RESISTANCE:

R

=6.5Ω (TYP.) AT VCC=5V,I

ON

■ SINE WAVE DISTORTION:

0.04%AT V

■ COMPATIBLE WITH TTL OUTPUTS ON

=5V,f=1KHz

CC

I/O

=1mA

CONTROL PIN:

=2V(MIN),VIL=0.8V(MAX)

V

IH

■ OPERATING VOLTAGE RANGE:

(OPR) = 4.5V to 5.5V

V

CC

■ IMPROVED LATCH-UP IMMUNITY

74V1T66

SINGLE BILATERAL SW ITCH

SOT323-5LSOT23-5L

ORDER CODES

PACKAGE T & R

SOT23-5L 74V1T66STR

SOT323-5L 74V1T66CTR

DESCRIPTION

The 74V1T66 is an advanced high-speed CMOS
SINGLE BILATERAL SWITCH fabricated in
silicon gate C

2

MOS technology. It achieves high
speed propagation delay and VERY LOW ON
resistances while maintaining true CMOS low
power consumption. This bilateral switch handles
rail to rail analog and digital signals that m ay vary
across the full powe r supply range (from GND t o
V

).

CC

The C input is provided to control the switc h and
it’s c ompatible with standard TTL output; the
switch is ON (port I/O is connect ed to Port O/I)

PIN CONNECTION AND IEC LOGIC SYMBOLS

when the C input is held high and OFF (high
impedance state exists between the two ports)
when C is held low. It can b e used in m any
application as Battery Powered System, Test
Equipment. It’s available in the commercial and
extended temperature range in SOT23-5L and
SOT323-5Lpackage.
All inputs and output are equipped with protection
circuits against static discharge, giving them ESD
immunity and transient excess voltage.

1/11April 2004

74V1T66

INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

PIN N° SYMBOL NAME AND FUNCTION

1 I/O Independent Input/Output
2 O/I Independent Output/Input

4C
3 GND Ground (0V)

5

V

CC

TRUTH TABLE

CONTROL SWITCH FUNCTION

HON

LOFF*

* High Impedance State

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V

V

V

I
I

I

OK

I

or I

I

CC

T

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied

Supply Voltage

CC

DC Input Voltage -0.5 to VCC+0.5

I

DC Control Input Voltage

IC

DC Output Voltage -0.5 to VCC+0.5

O

DC Input Diode Current

IK

DC Control Input Diode Current

IK

DC Output Diode Current
DC Output Current

O

DC VCCor Ground Current

GND

Storage Temperature

stg

Lead Temperature (10 sec)

L

Enable Input(Active
HIGH)

Positive Supply Voltage

-0.5 to +7.0 V
V

-0.5 to +7.0 V
V

± 20 mA

-20 mA

± 20 mA
± 50 mA
± 50 mA

-65 to +150 °C

300 °C

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

V

V

V

V

T

dt/dv

1) VINfrom0.8V to 2V on control pin

2/11

Supply Voltage

CC

Input Voltage 0 to V

I

Control Input Voltage

IC

Output Voltage 0 to V

O

Operating Temperature

op

Input Rise and Fall Time (note 1) V

CC

=5.0V

4.5 to 5.5 V

CC

0to5.5 V

CC

-55 to 125 °C
0 to 20 ns/V

V

V

DC SPECIFICATIONS

Symbol Parameter

V

R

R

I

(*) Voltage range is 5V ± 0.5V

High Level Input

IH

Voltage

V

Low Level Input

IL

Voltage
ON Resistance

ON

ON Resistance

ON

Input/Output

OFF

Leakage Current
(SWITCH OFF)

I

Switch Input

IZ

Leakage Current
(SWITCH ON,
OUTPUT OPEN)

I

Control Input

IN

Leakage Current

I

Quiescent Supply

CC

Current

Test Condition Value

T

= 25°C

V

(V)

5.0

5.0

5.0

5.0

5.5

5.5

0to

5.5

5.5

CC

(*)

(*)

(*)

(*)

VIC=V

V

I/O=VCC

I

≤ 1mA

I/O

VIC=V

V

I/O=VCC

I

≤ 1mA

I/O

V

OS=VCC

V

IS=VCC

V

IC=VIL

V

OS=VCC

V

IC=VIH

V

=5.5VorGND

IC

V

I=VCC

IH

to GND

IH

or GND

to GND

to GND

to GND

or GND

A

Min. Typ. Max. Min. Max. Min. Max.

222V

7.5 10 12 14 Ω

6.5 8.5 10 12 Ω

±0.1 ± 1 ± 5 µA

±0.1 ± 1 ± 5 µA

± 0.1 ± 1.0 ± 1.0 µA

74V1T66

-40 to 85°C -55 to 125°C

0.8 0.8 0.8 V

11020µA

Unit

AC ELECTRICAL CHARACTERISTICS (CL= 50pF, Input tr=tf= 3ns)

Test Condition Value

= 25°C

Symbol Parameter

t

t

PLZ

t

PHZ

t

PZL

t

PZH

(*) Voltage range is 5.0V ± 0.5V

PD

Delay Time

Output Disable
Time

Output Enable
Time

V

(V)

5.0

5.0

5.0

CC

(*)

(*)

(*)

tr=tf=6ns

RL= 500 Ω

RL=1KΩ

T

A

Min. Typ. Max. Min. Max. Min. Max.

0.3 0.6 1.0 2.0 ns

5.0 7.5 9.0 10.0 ns

2.0 4.0 5.0 7.0 ns

-40 to 85°C -55 to 125°C

Unit

3/11

74V1T66

CAPACITIVE CHARACTERISTICS

Test Condition Value

= 25°C

Symbol Parameter

T

A

Min. Typ. Max. Min. Max. Min. Max.

C

C

C

Input Capacitance

IN

Output

I/O

Capacitance
Power Dissipation

PD

Capacitance

310 10 10pF

10 pF

3pF

(note 1)

1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I

ANALOG SWITCH CHARACTERISTICS (GND = 0V; TA= 25°C)

Test Condition Value

Symbol Parameter

SineWave
Distortion (THD)

f

MAX

Frequency
Response
(Switch ON)

Feed through
Attenuation
(Switch OFF)

Crosstalk (Control
Input to Signal
Output)

(*) Voltage range is 5.0V ± 0.5V

5.0(*) 4

5.0(*) Adjust fINvoltagetoobtain0dBatVOS.

5.0(*) V

5.0(*) R

V

CC

(V)

(V

V

IN

p-p

)

=1KHzRL=10KΩ,CL=50pF

f

IN

Increase f

Adjust f

Frequency until dB meter reads -3dB

IN

R

=50Ω,CL=10pF

L

is centered at VCC/2

IN

Voltage to obtained 0dBm at V

IN

RL= 600Ω,CL=50pF,fIN=1KHzsinewave

=600Ω,CL=50pF,fIN= 1KHz square wave

L

t

r=tf

= 6ns

-40 to 85°C -55 to 125°C

CC(opr)=CPDxVCCxfIN+ICC

Typ.

0.04 %

180 MHz

-60 dB

IS

60 mV

Unit

Unit

4/11