ST 74V1T03 User Manual

74V1T03

74V1T03

SINGLE 2-INPUT OPEN DRAIN NAND GATE

■HIGH SPEED: tPD = 7 ns (TYP.) at VCC = 5V

■LOW POWER DISSIPATION: ICC = 1 μA (MAX.) at TA = 25 oC

■COMPATIBLE WITH TTL OUTPUTS: VIH = 2V (MIN), VIL = 0.8V (MAX)

■POWER DOWN PROTECTION ON INPUTS

■OPERATING VOLTAGE RANGE: VCC (OPR) = 4.5V to 5.5V

■IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The 74V1T03 is an advanced high-speed CMOS SINGLE 2-INPUT OPEN DRAIN NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology.

The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output.

PRELIMINARY DATA

S	C
(SOT23-5L)	(SC-70)

ORDER CODE:

74V1T03S 74V1T03C

This device can, with an external pull-up resistor, be used in wired AND configuration. This device can also be used as a led driver in any other application requiring a current sink.

Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V.

PIN CONNECTION AND IEC LOGIC SYMBOLS

September 1999

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74V1T03

INPUT EQUIVALENT CIRCUIT	PIN DESCRIPTION
	PI N No	SYMBOL	NAME AND FUNCT ION
	1	1A	Data Input
	2	1B	Data Input
	4	1Y	Data Output
	3	GND	Ground (0V)
	5	VCC	Positive Supply Voltage

	TRUTH TABLE
	A	B	Y
	L	L	Z
	L	H	Z
	H	L	Z
	H	H	L
	Z: High Impedance
ABSOLUTE MAXIMUM RATINGS
Symbol	Parameter	Val ue	Unit
VCC	Supply Voltage	-0.5 to +7.0	V
VI	DC Input Voltage	-0.5 to +7.0	V
VO	DC Output Voltage	-0.5 to VCC + 0.5	V
IIK	DC Input Diode Current	- 20	mA
IOK	DC Output Diode Current	± 20	mA
IO	DC Output Current	25	mA
ICC or IGND	DC VCC or Ground Current	± 50	mA
Tstg	Storage Temperature	-65 to +150	oC
TL	Lead Temperature (10 sec)	260	oC

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.

RECOMMENDED OPERATING CONDITIONS

Symbol	Parameter	Valu e	Uni t
VCC	Supply Voltage	4.5 to 5.5	V
VI	Input Voltage	0 to 5.5	V
VO	Output Voltage	0 to VCC	V
Top	Operating Temperature	-40 to +85	oC
dt/dv	Input Rise and Fall Time (see note 1) (VCC = 5.0 ± 0.5V)	0 to 20	ns/V

1) VIN from 0.8V to 2 V

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									74V1T03
DC SPECIFICATIONS
Symb ol	Parameter	T est Cond ition s					Val ue			Un it
		VCC			TA = 25 oC			-40 to 85 oC
		(V)			Min.	Typ .	Max. Min . Max.
VIH	High Level Input	4.5 to 5.5			2			2		V
	Voltage
VIL	Low Level Input	4.5 to 5.5					0.8		0.8	V
	Voltage
VOL	Low Level Output	4.5		IO=50 μA		0.0	0.1		0.1	V
	Voltage	4.5		IO=8 mA			0.36		0.44
IOZ	High Impedance		VI = VIH or VIL				±0.25		±2.5	μA
	Output Leakage	5.5	VO = VCC or GND
	Current
II	Input Leakage Current	0 to 5.5	VI = 5.5V or GND				±0.1		±1.0	μA
ICC	Quiescent Supply	5.5	VI = VCC or GND				1		10	μA
	Current
ICC	Additional Worst Case	5.5	One Input at 3.4V,				1.35		1.5	mA
	Supply Current		other input at VCC or
				GND
AC ELECTRICAL CHARACTERISTICS (Input tr = tf =3 ns)
Symb ol	Parameter	Test Co nditi on					Val ue			Un it
		VCC (*)	CL		TA = 25 oC			-40 to 85 oC
		(V)	(pF )		Min. Typ . Max.			Min . Max.
tPLz	Propagation Delay	5.0	15	RL = 1 KΩ		6.3	7.0	1.0	8.0	ns
tPzL	Time	5.0	50	RL = 1 KΩ		7.0	8.0	1.0	9.0
(*)Voltage range is 5V ± 0.5V
CAPACITIVE CHARACTERISTICS
Symb ol	Parameter	T est Cond ition s					Val ue			Un it
					TA = 25 oC			-40 to 85 oC
					Min.	Typ .	Max. Min . Max.
CIN	Input Capacitance					4	10		10	pF
COUT	Output Capacitance					5				pF
CPD	Power Dissipation					10.5				pF
	Capacitance (note 1)

1) CPD isdefined as the value of the IC'sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto Test Circuit).Average operating current can be obtained by the following equation. ICC(opr) = CPD •VCC •fIN + ICC

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