ST 74V1G66 User Manual

Features

■ High speed:

t

= 0.3 ns (typ.) at VCC = 5 V

PD

t

= 0.4 ns (typ.) at VCC = 3.3 V

PD

■ Low power dissipation:

I

= 1 μA (max.) at TA=25°C

CC

■ Low "ON" resistance:

R

=6.5Ω (typ.) at VCC = 5 V I

ON

R

= 8.5 Ω (typ.) at VCC = 3.3 V I

ON

■ Sine wave distortion:

0.04% at V

■ Wide operating range:

V

(opr) = 2 V to 5.5 V

CC

■ Improved latch-up immunity

= 3.3V f = 1kHz

CC

= 1 mA

I/O

= 1 mA

I/O

74V1G66

Single bilateral switch

SOT23-5L

SOT323-5L

Description

The 74V1G66 is an advanced high-speed CMOS
single bilateral switch fabricated in silicon gate

2

C

MOS technology. It achieves high speed
propagation delay and very low ON resistances
while maintaining true CMOS low power
consumption. This bilateral switch handles rail to
rail analog and digital signals that may vary
across the full power supply range (from GND to
V

).

CC

The C input is provided to control the switch and it
is compatible with standard CMOS outputs. The
switch is ON (port I/O is connected to port O/I)
when the C input is held high and OFF (high
impedance state exists between the two ports)
when C is held low. It can be used in many
applications as battery powered systems or test
equipments.

Table 1. Device summary

Order code Package Packaging

74V1G66STR SOT23-5L Tape and reel

The 74V1G66 is available in the commercial and
extended temperature range in SOT23-5L and
SOT323-5L packages.

All inputs and outputs are equipped with
protection circuits against static discharge, giving
them ESD immunity and transient excess voltage.

74V1G66CTR SOT323-5L Tape and reel

October 2008 Rev 8 1/15

www.st.com

15

Pin connection 74V1G66

1 Pin connection

Figure 1. Pin connection and IEC logic symbols

6##



 

#

)/ /) '.$

Table 2. Pin description

Pin number Symbol Name and function

1 I/O Independent input/output

2 O/I Independent output/input

3 GND Ground (0 V)

4 C Enable input (active high)

5V

CC

)/



#



8)

)



)

/)

!-6

Positive supply voltage

Figure 2. Input equivalent circuit

)/

#

).

Table 3. Truth table

Control Switch function

HON

LOFF

1. High impedance state.

/)

!-6

(1)

2/15

74V1G66 Maximum rating

2 Maximum rating

Stressing the device above the rating listed in the “Absolute Maximum Ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.

Table 4. Absolute maximum ratings

Symbol Parameter Value Unit

I

CC

I

V

V

V

I

GND

T

Supply voltage -0.5 to +7.0 V

CC

DC input voltage -0.5 to VCC + 0.5 V

V

I

DC control input voltage -0.5 to +7.0 V

IC

DC Output voltage -0.5 to VCC + 0.5 V

O

DC input diode current ± 20 mA

I

IK

I

DC control input diode current - 20 mA

IK

DC output diode current ± 20 mA

OK

DC output current ± 50 mA

I

O

or

DC VCC or ground current ± 50 mA

Storage temperature -65 to +150 °C

stg

T

Lead temperature (10 sec) 300 °C

L

Table 5. Recommended operating conditions

Symbol Parameter Value Unit

V

V

V

T

dt/dv Input rise and fall time

1. VIN from 30% to 70% of VCC on control pin.

Supply voltage 2 to 5.5 V

CC

Input voltage 0 to V

V

I

Control input voltage 0 to 5.5 V

IC

Output voltage 0 to V

O

Operating temperature -55 to 125 °C

op

(1)

VCC = 5.0 V

0 to 20 ns/V

CC

CC

V

V

3/15

Maximum rating 74V1G66

Table 6. DC specifications

Test condition Value

Symbol Parameter

V

V

R

R

High level input

IH

voltage

Low level input

IL

voltage

ON resistance

ON

ON resistance

ON

Input/output

I

OFF

leakage current
(switch OFF)

Switch input
leakage current

I

IZ

(switch ON, output
open)

V

CC

TA = 25°C -40 to 85°C

-55 to
125°C

(V)

Min Typ Max Min Max Min Max

2.0 1.5 1.5 1.5

2.7 to

5.5

0.7V

C

C

0.7V

CC

0.7V

CC

2.0 0.5 0.5 0.5

2.7 to

5.5

(1)

3.3

(2)

5.0

(1)

3.3

(2)

5.0

VIC = VIH

V

= VCC to

I/O

GND

≤ 1mA

I

I/O

VIC = VIH

= VCC or

V

I/O

GND

I

≤ 1mA

I/O

0.3V

C

C

0.3V

CC

12.5 21 23 27

7.5 10 12 14

8.5 11.5 12.5 15

6.5 8.5 10 12

VOS = VCC to

GND

5.5

VIS = VCC to

±0.1 ± 1 ± 5 μA

GND

= V

V

IC

IL

= VCC to

V

OS

5.5
V

GND

= V

IC

IH

±0.1 ± 1 ± 5 μA

0.3V

CC

Unit

V

V

Ω

Ω

Control input

I

IN

leakage current

I

1. Voltage range is 3.3 V ± 0.3 V.

2. Voltage range is 5 V ± 0.5 V.

Quiescent supply

CC

current

0 to

5.5

5.5

VIC = 5.5V or

GND

= VCC or

V

I

GND

4/15

± 0.1 ± 1.0 ± 1.0 μA

11020μA

74V1G66 Maximum rating

Table 7. AC electrical characteristics (CL = 50 pF, input tr = tf = 3 ns)

Test condition Value

Symbol Parameter

= 25°C -40 to 85°C

T

V

CC

A

-55 to
125°C

(V)

Min Typ Max Min Max Min Max

(1)

t

t

t

PHZ

t

t

PZH

1. Voltage range is 3.3 V ± 0.3 V.

2. Voltage range is 5 V ± 0.5 V.

Delay time

PD

Output disable

PLZ

time

PZL

Output enable time

3.3

5.0

3.3

5.0

3.3

5.0

(2)

(1)

(2)

(1)

(2)

tr = tf = 6 ns

RL = 500 Ω

RL = 1 KΩ

0.4 0.8 1.2 2.4

0.3 0.6 1.0 2.0

5.0 7.5 9.0 10.0

5.0 7.5 9.0 10.0

2.5 4.0 5.0 7.0

2.0 4.0 5.0 7.0

Table 8. Capacitive characteristics

Test condition Value

Symbol Parameter

V

CC

TA = 25°C -40 to 85°C

(V)

Min Typ Max Min Max Min Max

C

C

C

1. CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current
consumption without load. (Refer to the test circuit). Average operating current can be obtained by the following equation.
I

Input capacitance 3 10 10 10 pF

IN

Output

I/O

capacitance

Power dissipation

PD

capacitance

(opr) = CPD x VCC x fIN + ICC.

CC

(1)

3.3 2.5

5.0 3

10 pF

-55 to
125°C

Unit

ns

ns

ns

Unit

pF

5/15