ST 74V1G66 User Manual

74V1G66

Single bilateral switch

Features

■High speed:

tPD = 0.3 ns (typ.) at VCC = 5 V tPD = 0.4 ns (typ.) at VCC = 3.3 V

■Low power dissipation:

ICC = 1 μA (max.) at TA = 25 °C

■Low "ON" resistance:

RON = 6.5 Ω (typ.) at VCC = 5 V II/O = 1 mA RON = 8.5 Ω (typ.) at VCC = 3.3 V II/O = 1 mA

■Sine wave distortion:

0.04% at VCC = 3.3 V f = 1 kHz

■Wide operating range: VCC (opr) = 2 V to 5.5 V

■Improved latch-up immunity

Description

The 74V1G66 is an advanced high-speed CMOS single bilateral switch fabricated in silicon gate C2MOS technology. It achieves high speed propagation delay and very low ON resistances while maintaining true CMOS low power consumption. This bilateral switch handles rail to rail analog and digital signals that may vary across the full power supply range (from GND to VCC).

The C input is provided to control the switch and it is compatible with standard CMOS outputs. The switch is ON (port I/O is connected to port O/I) when the C input is held high and OFF (high impedance state exists between the two ports) when C is held low. It can be used in many applications as battery powered systems or test equipments.

SOT23-5L

SOT323-5L

The 74V1G66 is available in the commercial and extended temperature range in SOT23-5L and SOT323-5L packages.

All inputs and outputs are equipped with protection circuits against static discharge, giving them ESD immunity and transient excess voltage.

Table 1.	Device summary
	Order code	Package	Packaging
	74V1G66STR	SOT23-5L	Tape and reel
	74V1G66CTR	SOT323-5L	Tape and reel
October 2008		Rev 8	1/15
			www.st.com

Pin connection	74V1G66

1 Pin connection

Figure 1. Pin connection and IEC logic symbols

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Table 2.

Pin description

Pin number

Symbol

Name and function

1

I/O

Independent input/output

2

O/I

Independent output/input

3

GND

Ground (0 V)

4

C

Enable input (active high)

5

VCC

Positive supply voltage

Figure 2. Input equivalent circuit

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Table 3.	Truth table
	Control	Switch function
	H	ON
	L	OFF(1)

1. High impedance state.

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74V1G66	Maximum rating

2 Maximum rating

Stressing the device above the rating listed in the “Absolute Maximum Ratings” table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.

	Table 4.	Absolute maximum ratings
	Symbol	Parameter	Value	Unit
	VCC	Supply voltage	-0.5 to +7.0	V
	VI	DC input voltage	-0.5 to VCC + 0.5	V
	VIC	DC control input voltage	-0.5 to +7.0	V
	VO	DC Output voltage	-0.5 to VCC + 0.5	V
	IIK	DC input diode current	± 20	mA
	IIK	DC control input diode current	- 20	mA
	IOK	DC output diode current	± 20	mA
	IO	DC output current	± 50	mA
	ICC or	DC VCC or ground current	± 50	mA
	IGND
	Tstg	Storage temperature	-65 to +150	°C
	TL	Lead temperature (10 sec)	300	°C

Table 5.	Recommended operating conditions
Symbol	Parameter	Value	Unit
VCC	Supply voltage	2 to 5.5	V
VI	Input voltage	0 to VCC	V
VIC	Control input voltage	0 to 5.5	V
VO	Output voltage	0 to VCC	V
Top	Operating temperature	-55 to 125	°C
dt/dv	Input rise and fall time(1) VCC = 5.0 V	0 to 20	ns/V

1.VIN from 30% to 70% of VCC on control pin.

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Maximum rating

74V1G66

Table 6.

DC specifications

Test condition

Value

Symbol

Parameter

VCC

TA = 25°C

-40 to 85°C

-55 to

Unit

125°C

(V)

Min

Typ

Max

Min

Max

Min

Max

High level input

2.0

1.5

1.5

1.5

VIH

V

2.7 to

0.7VC

0.7V

0.7V

voltage

5.5

C

CC

CC

Low level input

2.0

0.5

0.5

0.5

VIL

V

2.7 to

0.3VC

0.3V

0.3V

voltage

5.5

C

CC

CC

3.3(1)

VIC = VIH

12.5

21

23

27

RON

ON resistance

VI/O = VCC to

Ω

(2)

GND

7.5

10

12

14

5.0

II/O ≤1mA

3.3(1)

VIC = VIH

8.5

11.5

12.5

15

RON

ON resistance

VI/O = VCC or

Ω

5.0(2)

GND

6.5

8.5

10

12

II/O ≤ 1mA

VOS = VCC to

Input/output

GND

±0.1

± 1

± 5

μA

IOFF

leakage current

5.5

VIS = VCC to

(switch OFF)

GND

VIC = VIL

Switch input

VOS = VCC to

leakage current

±0.1

± 1

± 5

μA

IIZ

(switch ON, output

5.5

GND

open)

VIC = VIH

IIN

Control input

0 to

VIC = 5.5V or

± 0.1

± 1.0

± 1.0

μA

leakage current

5.5

GND

ICC

Quiescent supply

5.5

VI = VCC or

1

10

20

μA

current

GND

1.Voltage range is 3.3 V ± 0.3 V.

2.Voltage range is 5 V ± 0.5 V.

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74V1G66										Maximum rating
Table 7.	AC electrical characteristics (CL = 50 pF, input tr = tf = 3 ns)
		Test condition						Value
Symbol	Parameter	VCC			TA = 25°C			-40 to 85°C		-55 to		Unit
										125°C
		(V)
				Min		Typ	Max	Min	Max	Min	Max
tPD	Delay time	3.3(1)	tr = tf = 6 ns			0.4	0.8		1.2		2.4	ns
		5.0(2)				0.3	0.6		1.0		2.0
tPLZ	Output disable	3.3(1)	RL = 500 Ω			5.0	7.5		9.0		10.0	ns
tPHZ	time	5.0(2)				5.0	7.5		9.0		10.0
tPZL	Output enable time	3.3(1)	RL = 1 KΩ			2.5	4.0		5.0		7.0	ns
tPZH		5.0(2)				2.0	4.0		5.0		7.0

1.Voltage range is 3.3 V ± 0.3 V.

2.Voltage range is 5 V ± 0.5 V.

Table 8.

Capacitive characteristics

Test condition

Value

Symbol

Parameter

VCC

TA = 25°C

-40 to 85°C

-55 to

Unit

125°C

(V)

Min

Typ

Max

Min

Max

Min

Max

CIN

Input capacitance

3

10

10

10

pF

CI/O

Output

10

pF

capacitance

CPD

Power dissipation

3.3

2.5

pF

capacitance(1)

5.0

3

1.CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to the test circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC.

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