74V1G66
Single bilateral switch
Features
■High speed:
tPD = 0.3 ns (typ.) at VCC = 5 V tPD = 0.4 ns (typ.) at VCC = 3.3 V
■Low power dissipation:
ICC = 1 μA (max.) at TA = 25 °C
■Low "ON" resistance:
RON = 6.5 Ω (typ.) at VCC = 5 V II/O = 1 mA RON = 8.5 Ω (typ.) at VCC = 3.3 V II/O = 1 mA
■Sine wave distortion:
0.04% at VCC = 3.3 V f = 1 kHz
■Wide operating range: VCC (opr) = 2 V to 5.5 V
■Improved latch-up immunity
Description
The 74V1G66 is an advanced high-speed CMOS single bilateral switch fabricated in silicon gate C2MOS technology. It achieves high speed propagation delay and very low ON resistances while maintaining true CMOS low power consumption. This bilateral switch handles rail to rail analog and digital signals that may vary across the full power supply range (from GND to VCC).
The C input is provided to control the switch and it is compatible with standard CMOS outputs. The switch is ON (port I/O is connected to port O/I) when the C input is held high and OFF (high impedance state exists between the two ports) when C is held low. It can be used in many applications as battery powered systems or test equipments.
SOT23-5L
SOT323-5L
The 74V1G66 is available in the commercial and extended temperature range in SOT23-5L and SOT323-5L packages.
All inputs and outputs are equipped with protection circuits against static discharge, giving them ESD immunity and transient excess voltage.
Table 1. |
Device summary |
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Order code |
Package |
Packaging |
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74V1G66STR |
SOT23-5L |
Tape and reel |
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74V1G66CTR |
SOT323-5L |
Tape and reel |
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October 2008 |
Rev 8 |
1/15 |
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www.st.com |
Pin connection |
74V1G66 |
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6## |
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8) |
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/ ) |
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) / |
/ ) '.$ |
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!-6 |
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Table 2. |
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Pin description |
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Pin number |
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Symbol |
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Name and function |
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1 |
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I/O |
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Independent input/output |
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2 |
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O/I |
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Independent output/input |
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3 |
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GND |
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Ground (0 V) |
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4 |
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C |
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Enable input (active high) |
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5 |
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VCC |
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Positive supply voltage |
) / |
/ ) |
#).
!-6
Table 3. |
Truth table |
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Control |
Switch function |
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H |
ON |
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L |
OFF(1) |
1. High impedance state.
2/15
74V1G66 |
Maximum rating |
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Stressing the device above the rating listed in the “Absolute Maximum Ratings” table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.
Table 4. |
Absolute maximum ratings |
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Symbol |
Parameter |
Value |
Unit |
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VCC |
Supply voltage |
-0.5 to +7.0 |
V |
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VI |
DC input voltage |
-0.5 to VCC + 0.5 |
V |
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VIC |
DC control input voltage |
-0.5 to +7.0 |
V |
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VO |
DC Output voltage |
-0.5 to VCC + 0.5 |
V |
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IIK |
DC input diode current |
± 20 |
mA |
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IIK |
DC control input diode current |
- 20 |
mA |
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IOK |
DC output diode current |
± 20 |
mA |
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IO |
DC output current |
± 50 |
mA |
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ICC or |
DC VCC or ground current |
± 50 |
mA |
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IGND |
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Tstg |
Storage temperature |
-65 to +150 |
°C |
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TL |
Lead temperature (10 sec) |
300 |
°C |
Table 5. |
Recommended operating conditions |
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Symbol |
Parameter |
Value |
Unit |
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VCC |
Supply voltage |
2 to 5.5 |
V |
VI |
Input voltage |
0 to VCC |
V |
VIC |
Control input voltage |
0 to 5.5 |
V |
VO |
Output voltage |
0 to VCC |
V |
Top |
Operating temperature |
-55 to 125 |
°C |
dt/dv |
Input rise and fall time(1) VCC = 5.0 V |
0 to 20 |
ns/V |
1.VIN from 30% to 70% of VCC on control pin.
3/15
Maximum rating |
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74V1G66 |
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Table 6. |
DC specifications |
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Test condition |
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Value |
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Symbol |
Parameter |
VCC |
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TA = 25°C |
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-40 to 85°C |
-55 to |
Unit |
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125°C |
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(V) |
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Min |
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Typ |
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Max |
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Min |
Max |
Min |
Max |
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High level input |
2.0 |
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1.5 |
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1.5 |
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1.5 |
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VIH |
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V |
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2.7 to |
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0.7VC |
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0.7V |
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0.7V |
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voltage |
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5.5 |
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C |
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CC |
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CC |
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Low level input |
2.0 |
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0.5 |
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0.5 |
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0.5 |
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VIL |
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V |
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2.7 to |
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0.3VC |
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0.3V |
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0.3V |
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voltage |
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5.5 |
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C |
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CC |
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CC |
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3.3(1) |
VIC = VIH |
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12.5 |
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21 |
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23 |
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27 |
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RON |
ON resistance |
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VI/O = VCC to |
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Ω |
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(2) |
GND |
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7.5 |
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10 |
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12 |
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14 |
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5.0 |
II/O ≤1mA |
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3.3(1) |
VIC = VIH |
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8.5 |
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11.5 |
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12.5 |
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15 |
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RON |
ON resistance |
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VI/O = VCC or |
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Ω |
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5.0(2) |
GND |
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6.5 |
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8.5 |
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10 |
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12 |
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II/O ≤ 1mA |
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VOS = VCC to |
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Input/output |
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GND |
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±0.1 |
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± 1 |
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± 5 |
μA |
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IOFF |
leakage current |
5.5 |
VIS = VCC to |
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(switch OFF) |
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GND |
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VIC = VIL |
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Switch input |
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VOS = VCC to |
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leakage current |
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±0.1 |
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± 1 |
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± 5 |
μA |
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IIZ |
(switch ON, output |
5.5 |
GND |
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open) |
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VIC = VIH |
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IIN |
Control input |
0 to |
VIC = 5.5V or |
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± 0.1 |
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± 1.0 |
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± 1.0 |
μA |
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leakage current |
5.5 |
GND |
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ICC |
Quiescent supply |
5.5 |
VI = VCC or |
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1 |
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10 |
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20 |
μA |
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current |
GND |
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1.Voltage range is 3.3 V ± 0.3 V.
2.Voltage range is 5 V ± 0.5 V.
4/15
74V1G66 |
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Maximum rating |
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Table 7. |
AC electrical characteristics (CL = 50 pF, input tr = tf = 3 ns) |
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Test condition |
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Value |
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Symbol |
Parameter |
VCC |
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TA = 25°C |
-40 to 85°C |
-55 to |
Unit |
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125°C |
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(V) |
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Min |
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Typ |
Max |
Min |
Max |
Min |
Max |
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tPD |
Delay time |
3.3(1) |
tr = tf = 6 ns |
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0.4 |
0.8 |
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1.2 |
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2.4 |
ns |
5.0(2) |
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0.3 |
0.6 |
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1.0 |
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2.0 |
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tPLZ |
Output disable |
3.3(1) |
RL = 500 Ω |
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5.0 |
7.5 |
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9.0 |
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10.0 |
ns |
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tPHZ |
time |
5.0(2) |
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5.0 |
7.5 |
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9.0 |
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10.0 |
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tPZL |
Output enable time |
3.3(1) |
RL = 1 KΩ |
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2.5 |
4.0 |
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5.0 |
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7.0 |
ns |
tPZH |
5.0(2) |
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2.0 |
4.0 |
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5.0 |
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7.0 |
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1.Voltage range is 3.3 V ± 0.3 V.
2.Voltage range is 5 V ± 0.5 V.
Table 8. |
Capacitive characteristics |
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Test condition |
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Value |
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Symbol |
Parameter |
VCC |
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TA = 25°C |
-40 to 85°C |
-55 to |
Unit |
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125°C |
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(V) |
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Min |
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Typ |
Max |
Min |
Max |
Min |
Max |
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CIN |
Input capacitance |
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3 |
10 |
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10 |
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10 |
pF |
CI/O |
Output |
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10 |
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pF |
capacitance |
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CPD |
Power dissipation |
3.3 |
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2.5 |
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pF |
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capacitance(1) |
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5.0 |
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3 |
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1.CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to the test circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC.
5/15