74V1G125
SINGLE BUS BUFFER (3-STATE)
■ HIGH SPEED: t
■ LOW POWER DISSIPATION:
I
=1µA(MAX.)atTA=25°C
CC
■ HIGH NOISE IMMUNITY:
V
NIH=VNIL
■ POWER DOWN PROTECTION ON INPUTS
■ SYMMETRICAL OUTPUTIMPEDANCE:
|I
|=IOL=8mA(MIN)atVCC=4.5V
OH
■ BALANCED PROPAGATION DELAYS:
t
≅ t
PLH
■ OPERATING VOLTAGE RANGE:
V
(OPR) = 2V to 5.5V
CC
■ IMPROVED LATCH-UP IMMUNITY
= 28% VCC(MIN.)
PHL
= 3.8ns (TYP.) at VCC=5V
PD
DESCRIPTION
The 74V1G125 is anadvanced high-speed CMOS
SINGLE BUS BUFFER fabricated with sub-micron
silicon gate and double-layer me tal wiring C
2
MOS
technology.
3-STATE control input G
has to be set HIGH t o
place the out put into the high impedance state.
SOT323-5LSOT23-5L
ORDER CODES
PACKAGE T & R
SOT23-5L 74V1G125STR
SOT323-5L 74V1G125CTR
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
usedto interface 5V to 3V.
PIN CONNECTION AND IEC LOGIC SYMBOLS
1/10April 2004
74V1G125
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN N° SYMBOL NAME AND FUNCTION
11G
2 1A Data Input
4 1Y Data Output
3 GND Ground (0V)
5
TRUTH TABLE
V
CC
Output Enable Input
Positive Supply Voltage
AG
Y
XHZ
LLL
HLH
X : Don’t Care
Z : High Impedance
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
OK
I
I
or I
CC
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
Supply Voltage
CC
DC Input Voltage
I
DC Output Voltage -0.5 to VCC+0.5
O
DC Input Diode Current
IK
DC Output Diode Current
DC Output Current
O
DC VCCor Ground Current
GND
Storage Temperature
stg
Lead Temperature (10 sec)
L
-0.5 to +7.0 V
-0.5 to +7.0 V
V
-20 mA
± 20 mA
± 25 mA
± 50 mA
-65 to +150 °C
260 °C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
V
V
T
dt/dv
1) VINfrom30%to70%ofV
Supply Voltage
CC
Input Voltage
I
Output Voltage 0 to V
O
Operating Temperature
op
Input Rise and Fall Time (note 1) (V
CC
CC
(V
=5.0± 0.5V)
CC
=3.3± 0.3V)
2to5.5 V
0to5.5 V
CC
-55 to 125 °C
0 to 100
0to20
2/10
V
ns/V
ns/V
DC SPECIFICATIONS
Symbol Parameter
V
V
V
High Level Input
IH
Voltage
V
Low Level Input
IL
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
High Impedance
I
OZ
Output Leakage
Current
I
Input Leakage
I
Current
I
Quiescent Supply
CC
Current
Test Condition Value
V
(V)
CC
= 25°C
A
Min. Typ. Max. Min. Max. Min. Max.
-40 to 85°C -55 to 125°C
T
2.0 1.5 1.5 1.5
3.0to
5.5
0.7V
CC
0.7V
CC
0.7V
CC
2.0 0.5 0.5 0.5
3.0to
5.5
2.0
3.0
4.5
3.0
4.5
2.0
3.0
4.5
3.0
4.5
5.5
0to
5.5
5.5
IO=-50 µA
=-50 µA
I
O
=-50 µA
I
O
=-4 mA
I
O
I
=-8 mA
O
IO=50 µA
I
=50 µA
O
=50 µA
I
O
=4 mA
I
O
I
=8 mA
O
I=VIH
or V
IL
V
VO=VCCor GND
VI=5.5VorGND
V
I=VCC
or GND
1.9 2.0 1.9 1.9
2.9 3.0 2.9 2.9
4.4 4.5 4.4 4.4
2.58 2.48 2.4
3.94 3.8 3.7
0.3V
CC
0.3V
CC
0.0 0.1 0.1 0.1
0.0 0.1 0.1 0.1
0.0 0.1 0.1 0.1
0.36 0.44 0.55
0.36 0.44 0.55
±0.25 ± 2.5 ± 5 µA
± 0.1 ± 1 ± 1 µA
11020µA
74V1G125
Unit
V
CC
V
V
V
0.3V
AC ELECTRICAL CHARACTERISTICS (Input t
Test Condition Value
Symbol Parameter
t
t
t
t
t
t
(*) Voltage rangeis3.3V± 0.3V
(**) Voltage range is 5.0V ± 0.5V
Propagation Delay
PLH
Time
PHL
Output Disable
PLZ
Time
PHZ
Output Enable
PZL
Time
PZH
V
3.3
3.3
5.0
5.0
3.3
3.3
5.0
5.0
3.3
3.3
5.0
5.0
C
CC
(V)
L
(pF)
(*)
15 5.1 7.5 1.0 8.5 1.0 9.5
(*)
50 5.6 8.0 1.0 9.5 1.0 10.5
(**)
15 3.8 5.5 1.0 6.5 1.0 7.5
(**)
50 4.3 6.5 1.0 7.5 1.0 8.5
(*)
15 5.4 8.0 1.0 9.0 1.0 10.0
(*)
50 7.9 11.5 1.0 12.5 1.0 13.5
(**)
15 3.6 5.0 1.0 6.0 1.0 7.0
(**)
50 5.1 7.0 1.0 8.0 1.0 9.0
(*)
15 5.4 7.6 1.0 9.5 1.0 10.5
(*)
50 5.9 8.5 1.0 10.0 1.0 11.0
(**)
15 3.7 5.9 1.0 7.0 1.0 8.0
(**)
50 4.1 6.5 1.0 7.5 1.0 8.5
=3ns)
r=tf
= 25°C
T
A
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
Unit
ns
ns
ns
3/10