ST 74V1G07 User Manual
74V1G07
74V1G07
SINGLE BUFFER (OPEN DRAIN)
■HIGH SPEED: tPD = 6.1 ns (TYP.) at VCC = 5V
■LOW POWER DISSIPATION: ICC = 1 μA (MAX.) at TA = 25 oC
■HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.)
■POWER DOWN PROTECTION ON INPUT
■OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 5.5V
■IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74V1G07 is an advanced high-speed CMOS SINGLE BUFFER (OPEN DRAIN) fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology.
The internal circuit is composed of 2 stages including buffer output, which provide high noise immunity and stable output.
PRELIMINARY DATA
S |
C |
(SOT23-5L) |
(SC-70) |
ORDER CODE:
74V1G07S 74V1G07C
Power down protection is provided on input and 0 to 7V can be accepted on input with no regard to the supply voltage. This device can be used to interface 5V to 3V.
PIN CONNECTION AND IEC LOGIC SYMBOLS
October 1999 |
1/7 |
74V1G07
INPUT EQUIVALENT CIRCUIT |
PIN DESCRIPTION |
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PI N No |
SYMBOL |
NAME AND FUNCT ION |
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1 |
N.C. |
Not Connected |
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2 |
1A |
Data Input |
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4 |
1Y |
Data Output |
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3 |
GND |
Ground (0V) |
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5 |
VCC |
Positive Supply Voltage |
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TRUTH TABLE |
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A |
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Y |
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L |
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L |
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H |
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Z |
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Z = High impedance |
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ABSOLUTE MAXIMUM RATINGS |
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Symbol |
Parameter |
Val ue |
Unit |
VCC |
Supply Voltage |
-0.5 to +7.0 |
V |
VI |
DC Input Voltage |
-0.5 to +7.0 |
V |
VO |
DC Output Voltage |
-0.5 to VCC + 0.5 |
V |
IIK |
DC Input Diode Current |
- 20 |
mA |
IOK |
DC Output Diode Current |
± 20 |
mA |
IO |
DC Output Current |
± 25 |
mA |
ICC or IGND |
DC VCC or Ground Current |
± 50 |
mA |
Tstg |
Storage Temperature |
-65 to +150 |
oC |
TL |
Lead Temperature (10 sec) |
260 |
oC |
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.
RECOMMENDED OPERATING CONDITIONS
Symbol |
Parameter |
Valu e |
Uni t |
VCC |
Supply Voltage |
2.0 to 5.5 |
V |
VI |
Input Voltage |
0 to 5.5 |
V |
VO |
Output Voltage |
0 to VCC |
V |
Top |
Operating Temperature |
-40 to +85 |
oC |
dt/dv |
Input Rise and Fall Time (see note 1) (VCC = 3.3 ± 0.3V) |
0 to 100 |
ns/V |
|
(V CC = 5.0 ± 0.5V) |
0 to 20 |
ns/V |
1) VIN from 30% to70%of VCC
2/7
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74V1G07 |
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DC SPECIFICATIONS |
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Symb ol |
Parameter |
T est Cond ition s |
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Val ue |
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Un it |
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VCC |
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TA = 25 oC |
-40 to 85 oC |
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(V) |
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Min. Typ . Max. Min . Max. |
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VIH |
High Level Input |
2.0 |
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1.5 |
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1.5 |
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V |
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Voltage |
3.0 to 5.5 |
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0.7VCC |
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0.7VCC |
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VIL |
Low Level Input |
2.0 |
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0.5 |
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0.5 |
V |
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Voltage |
3.0 to 5.5 |
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0.3VCC |
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0.3VCC |
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VOL |
Low Level Output |
2.0 |
IO=50 μA |
0.0 |
0.1 |
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0.1 |
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Voltage |
3.0 |
IO=50 μA |
0.0 |
0.1 |
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0.1 |
V |
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4.5 |
IO=50 μA |
0.0 |
0.1 |
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0.1 |
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3.0 |
IO=4 mA |
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0.36 |
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0.44 |
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4.5 |
IO=8 mA |
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0.36 |
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0.44 |
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IOZ |
High Impedance |
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VI = VIH or VIL |
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±0.25 |
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±2.5 |
μA |
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Output Leakage |
5.5 |
VO = VCC or GND |
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Current |
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II |
Input Leakage Current |
0 to 5.5 |
VI = 5.5V or GND |
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±0.1 |
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±1.0 |
μA |
ICC |
Quiescent Supply |
5.5 |
VI = VCC or GND |
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1 |
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10 |
μA |
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Current |
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AC ELECTRICAL CHARACTERISTICS (Input tr = tf =3 ns) |
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Symb ol |
Parameter |
Test Co nditi on |
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Val ue |
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Un it |
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VCC |
CL |
TA = 25 oC |
-40 to 85 oC |
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(V) |
(pF ) |
Min. Typ . Max. |
Min . Max. |
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tPLH |
Propagation Delay |
3.3(*) |
15 |
7.0 |
9.7 |
1.0 |
11.5 |
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tPHL |
Time |
3.3(*) |
50 |
9.5 |
13.2 |
1.0 |
15.0 |
ns |
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5.0(**) |
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15 |
4.6 |
6.8 |
1.0 |
8.0 |
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5.0(**) |
50 |
6.1 |
8.8 |
1.0 |
10.0 |
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(*) Voltage range is 3.3V ± 0.3V |
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(**) Voltage range is 5V ± 0.5V |
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CAPACITIVE CHARACTERISTICS |
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Symb ol |
Parameter |
T est Cond ition s |
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Val ue |
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Un it |
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TA = 25 oC |
-40 to 85 oC |
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Min. Typ . |
Max. Min . Max. |
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CIN |
Input Capacitance |
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4 |
10 |
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10 |
pF |
CPD |
Power Dissipation |
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11 |
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pF |
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Capacitance (note 1) |
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1) CPD isdefined as the value of the IC'sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto Test Circuit).Average operating current can be obtained by the following equation. ICC(opr) = CPD •VCC •fIN + ICC
3/7
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