ST 74V1G04 User Manual

74V1G04

SINGLE INVERTER

■ HIGH SPEED: t

■ LOW POWER DISSIPATION:

I

=1µA(MAX.) at TA=25°C

CC

■ HIGH NOISE IMMUNITY:

V

NIH=VNIL

■ POWER DOWN PROTECTION ON INPUT

■ SYMMETRICAL OUTPUTIMPEDANCE:

|I

|=IOL=8mA(MIN)atVCC=4.5V

OH

■ BALANCED PROPAGATION DELAYS:

t

≅ t

PLH

■ OPERATING VOLTAGE RANGE:

V

(OPR) = 2V to 5.5V

CC

■ IMPROVED LATCH-UP IMMUNITY

= 28% VCC(MIN.)

PHL

= 3.8ns (TYP.) at VCC=5V

PD

DESCRIPTION

The 74V1G04 is an advanced high-speed CMOS
SINGLE INVERTER fabricated with sub-micron
silicon gate and double-layer me tal wiring C

2

MOS
technology.
The internal circuit is composed of 3 stages
including buffer ou tput, which provide high noise
immunity and stable output.

SOT323-5LSOT23-5L

ORDER CODES

PACKAGE T & R

SOT23-5L 74V1G04STR

SOT323-5L 74V1G04CTR

Power down protection is provided on inpu t and 0
to 7V c an be acce pted on input with no regard to
the supply voltage. This device can be used t o
interface5Vto3V.

PIN CONNECTION AND IEC LOGIC SYMBOLS

1/9April 2004

74V1G04

INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

PIN N° SYMBOL NAME AND FUNCTION

1 NC Not Connected
2 1A Data Input
4 1Y Data Output
3 GND Ground (0V)
5

TRUTH TABLE

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V

V

I

I

OK

I

or I

I

CC

T

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.

Supply Voltage

CC

DC Input Voltage

I

DC Output Voltage -0.5 to VCC+0.5

O

DC Input Diode Current

IK

DC Output Diode Current
DC Output Current

O

DC VCCor Ground Current

GND

Storage Temperature

stg

Lead Temperature (10 sec)

L

V

CC

Positive Supply Voltage

AY

LH

HL

-0.5 to +7.0 V

-0.5 to +7.0 V
V

-20 mA

± 20 mA
± 25 mA
± 50 mA

-65 to +150 °C

260 °C

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

V

V
V
T

dt/dv

1) VINfrom30% to 70% of V

2/9

Supply Voltage

CC

Input Voltage

I

Output Voltage 0 to V

O

Operating Temperature

op

Input Rise and Fall Time (note 1) (V

CC

CC

(V

=5.0± 0.5V)

CC

=3.3± 0.3V)

2to5.5 V
0to5.5 V

CC

-55 to 125 °C
0 to 100

0to20

V

ns/V
ns/V

DC SPECIFICATIONS

Symbol Parameter

V

V

V

High Level Input

IH

Voltage

V

Low Level Input

IL

Voltage

High Level Output

OH

Voltage

Low Level Output

OL

Voltage

Input Leakage

I

I

Current

I

Quiescent Supply

CC

Current

Test Condition Value

V

(V)

CC

= 25°C

A

Min. Typ. Max. Min. Max. Min. Max.

-40 to 85°C -55 to 125°C

T

2.0 1.5 1.5 1.5

3.0to

5.5

0.7V

CC

0.7V

CC

0.7V

CC

2.0 0.5 0.5 0.5

3.0to

5.5

2.0

3.0

4.5

3.0

4.5

2.0

3.0

4.5

3.0

4.5

0to

5.5

5.5

IO=-50 µA

=-50 µA

I

O

=-50 µA

I

O

=-4 mA

I

O

I

=-8 mA

O

IO=50 µA
I

=50 µA

O

=50 µA

I

O

=4 mA

I

O

I

=8 mA

O

VI=5.5VorGND

V

I=VCC

or GND

1.9 2.0 1.9 1.9

2.9 3.0 2.9 2.9

4.4 4.5 4.4 4.4

2.58 2.48 2.4

3.94 3.8 3.7

0.3V

CC

0.3V

CC

0.0 0.1 0.1 0.1

0.0 0.1 0.1 0.1

0.0 0.1 0.1 0.1

0.36 0.44 0.55

0.36 0.44 0.55

± 0.1 ± 1 ± 1 µA

11020µA

74V1G04

Unit

0.3V

CC

V

V

V

V

AC ELECTRICAL CHARACTERISTICS (Input t

r=tf

=3ns)

Test Condition Value

= 25°C

Symbol Parameter

t

PLHtPHL

(*) Voltage rangeis 3.3V ± 0.3V
(**) Voltage range is 5.0V ± 0.5V

Propagation Delay
Time

V

3.3

3.3

5.0

5.0

C

CC

(V)

L

(pF)

(*)

15 5.0 7.0 1.0 8.5 1.0 9.5

(*)

50 6.1 9.0 1.0 10.5 1.0 11.5

(**)

15 3.8 5.5 1.0 6.5 1.0 7.5

(**)

50 4.7 7.5 1.0 8.5 1.0 9.5

T

A

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

Unit

ns

CAPACITIVE CHARACTERISTICS

Test Condition Value

T

Symbol Parameter

C

C

Input Capacitance

IN

Power Dissipation

PD

Capacitance
(note 1)

1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I

= 25°C

A

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

410 10 10pF

10 pF

CC(opr)=CPDxVCCxfIN+ICC

Unit

3/9