ST 74V1G02 User Manual

74V1G02

74V1G02

SINGLE 2-INPUT NOR GATE

HIGH SPEED: tPD = 3.6 ns (TYP.) at VCC = 5V

LOW POWER DISSIPATION: ICC = 1 μA (MAX.) at TA = 25 oC

HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.)

POWER DOWN PROTECTION ON INPUTS

SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8 mA (MIN)

BALANCED PROPAGATION DELAYS:

tPLH tPHL

OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 5.5V

IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The 74V1G02 is an advanced high-speed CMOS SINGLE 2-INPUT NOR GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology.

PIN CONNECTION AND IEC LOGIC SYMBOLS

S

C

(SOT23-5L)

(SC-70)

ORDER CODE:

74V1G02S 74V1G02C

The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output.

Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V.

October 1999

1/7

74V1G02

INPUT EQUIVALENT CIRCUIT

PIN DESCRIPTION

 

 

PI N No

SYMBOL

NAME AND FUNCT ION

 

1

1A

Data Input

 

2

1B

Data Input

 

4

1Y

Data Output

 

3

GND

Ground (0V)

 

5

VCC

Positive Supply Voltage

TRUTH TABLE

A

B

Y

L

L

H

L

H

L

H

L

L

H

H

L

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Val ue

Unit

VCC

Supply Voltage

-0.5 to +7.0

V

VI

DC Input Voltage

-0.5 to +7.0

V

VO

DC Output Voltage

-0.5 to VCC + 0.5

V

IIK

DC Input Diode Current

- 20

mA

IOK

DC Output Diode Current

± 20

mA

IO

DC Output Current

± 25

mA

ICC or IGND

DC VCC or Ground Current

± 50

mA

Tstg

Storage Temperature

-65 to +150

oC

TL

Lead Temperature (10 sec)

260

oC

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.

RECOMMENDED OPERATING CONDITIONS

Symbol

Parameter

Valu e

Uni t

VCC

Supply Voltage

2.0 to 5.5

V

VI

Input Voltage

0 to 5.5

V

VO

Output Voltage

0 to VCC

V

Top

Operating Temperature

-40 to +85

oC

dt/dv

Input Rise and Fall Time (see note 1) (VCC = 3.3 ± 0.3V)

0 to 100

ns/V

 

(V CC = 5.0 ± 0.5V)

0 to 20

ns/V

1) VIN from 30% to70%of VCC

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ST 74V1G02 User Manual

 

 

 

 

 

 

 

 

74V1G02

DC SPECIFICATIONS

 

 

 

 

 

 

 

 

Symb ol

Parameter

T est Cond ition s

 

 

Val ue

 

 

Un it

 

 

VCC

 

TA = 25 oC

-40 to 85 oC

 

 

 

(V)

 

Min. Typ . Max. Min . Max.

 

 

 

 

 

 

VIH

High Level Input

2.0

 

1.5

 

 

1.5

 

V

 

Voltage

3.0 to 5.5

 

0.7VCC

 

 

0.7VCC

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VIL

Low Level Input

2.0

 

 

 

0.5

 

0.5

V

 

Voltage

3.0 to 5.5

 

 

 

0.3VCC

 

0.3VCC

 

 

 

 

 

 

 

 

 

 

 

 

 

VOH

High Level Output

2.0

IO=-50 μA

1.9

2.0

 

1.9

 

 

 

Voltage

3.0

IO=-50 μA

2.9

3.0

 

2.9

 

V

 

 

4.5

IO=-50 μA

4.4

4.5

 

4.4

 

 

 

 

 

 

 

 

3.0

IO=-4 mA

2.58

 

 

2.48

 

 

 

 

4.5

IO=-8 mA

3.94

 

 

3.8

 

 

VOL

Low Level Output

2.0

IO=50 μA

 

0.0

0.1

 

0.1

 

 

Voltage

3.0

IO=50 μA

 

0.0

0.1

 

0.1

 

 

 

 

 

V

 

 

4.5

IO=50 μA

 

0.0

0.1

 

0.1

 

 

 

 

 

 

 

3.0

IO=4 mA

 

 

0.36

 

0.44

 

 

 

4.5

IO=8 mA

 

 

0.36

 

0.44

 

II

Input Leakage Current

0 to 5.5

VI = 5.5V or GND

 

 

±0.1

 

±1.0

μA

ICC

Quiescent Supply

5.5

VI = VCC or GND

 

 

1

 

10

μA

 

Current

 

 

 

 

 

 

 

 

AC ELECTRICAL CHARACTERISTICS (Input tr = tf =3 ns)

 

 

 

 

 

 

Symb ol

Parameter

Test Co nditi on

 

 

Val ue

 

 

Un it

 

 

VCC

CL

TA = 25 oC

-40 to 85 oC

 

 

 

(V)

(pF )

Min. Typ . Max.

Min . Max.

 

 

 

 

 

 

tPLH

Propagation Delay

3.3(*)

15

 

5.6

8.0

1.0

9.5

 

tPHL

Time

3.3(*)

50

 

8.1

11.4

1.0

13.0

ns

 

 

5.0(**)

15

 

3.6

5.5

1.0

6.5

 

 

 

 

 

 

5.0(**)

50

 

5.1

7.5

1.0

8.5

 

(*) Voltage range is 3.3V ± 0.3V

 

 

 

 

 

 

 

 

(**) Voltage range is 5V ± 0.5V

 

 

 

 

 

 

 

 

CAPACITIVE CHARACTERISTICS

 

 

 

 

 

 

 

Symb ol

Parameter

T est Cond ition s

 

 

Val ue

 

 

Un it

 

 

 

 

TA = 25 oC

-40 to 85 oC

 

 

 

 

 

Min.

Typ .

Max. Min . Max.

 

CIN

Input Capacitance

 

 

 

4

10

 

10

pF

CPD

Power Dissipation

 

 

 

15

 

 

 

pF

 

Capacitance (note 1)

 

 

 

 

 

 

 

 

1) CPD isdefined as the value of the IC'sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto Test Circuit).Average operating current can be obtained by the following equation. ICC(opr) = CPD VCC fIN + ICC

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