74V1G00
SINGLE 2-INPUT NAND GATE
■ HIGH SPEED: t
■ LOW POWER DISSIPATION:
I
=1µA(MAX.) at TA=25°C
CC
■ HIGH NOISE IMMUNITY:
V
NIH=VNIL
■ POWER DOWN PROTECTION ON INPUTS
■ SYMMETRICAL OUTPUTIMPEDANCE:
|I
|=IOL=8mA(MIN)atVCC=4.5V
OH
■ BALANCED PROPAGATION DELAYS:
t
≅ t
PLH
■ OPERATING VOLTAGE RANGE:
V
(OPR) = 2V to 5.5V
CC
■ IMPROVED LATCH-UP IMMUNITY
= 28% VCC(MIN.)
PHL
= 3.7ns (TYP.) at VCC=5V
PD
DESCRIPTION
The 74V1G00 is an advanced high-speed CMOS
SINGLE 2-INPUT NAND GATE fabricated with
sub-micron silicon gate and double-layer metal
wiring C
2
MOS technology.
The internal circuit is composed of 3 stages
including buffer ou tput, which provide high noise
immunity and stable output.
SOT323-5LSOT23-5L
ORDER CODES
PACKAGE T & R
SOT23-5L 74V1G00STR
SOT323-5L 74V1G00CTR
Power down prot ection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
usedto interface 5V to 3V.
PIN CONNECTION AND IEC LOGIC SYMBOLS
1/9April 2004
74V1G00
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN N° SYMBOL NAME AND FUNCTION
1 1A Data Input
2 1B Data Input
4 1Y Data Output
3 GND Ground (0V)
5
TRUTH TABLE
ABY
LLH
LHH
HLH
HHL
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
OK
I
I
or I
CC
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
Supply Voltage
CC
DC Input Voltage
I
DC Output Voltage -0.5 to VCC+0.5
O
DC Input Diode Current
IK
DC Output Diode Current
DC Output Current
O
DC VCCor Ground Current
GND
Storage Temperature
stg
Lead Temperature (10 sec)
L
V
CC
Positive Supply Voltage
-0.5 to +7.0 V
-0.5 to +7.0 V
-20 mA
± 20 mA
± 25 mA
± 50 mA
-65 to +150 °C
260 °C
V
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
V
V
T
dt/dv
1) VINfrom30% to 70% of V
2/9
Supply Voltage
CC
Input Voltage
I
Output Voltage 0 to V
O
Operating Temperature
op
Input Rise and Fall Time (note 1) (V
CC
CC
(V
=5.0± 0.5V)
CC
=3.3± 0.3V)
2to5.5 V
0to5.5 V
CC
-55 to 125 °C
0 to 100
0to20
V
ns/V
ns/V
DC SPECIFICATIONS
Symbol Parameter
V
V
V
High Level Input
IH
Voltage
V
Low Level Input
IL
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
Input Leakage
I
I
Current
I
Quiescent Supply
CC
Current
Test Condition Value
V
(V)
CC
= 25°C
A
Min. Typ. Max. Min. Max. Min. Max.
-40 to 85°C -55 to 125°C
T
2.0 1.5 1.5 1.5
3.0to
5.5
0.7V
CC
0.7V
CC
0.7V
CC
2.0 0.5 0.5 0.5
3.0to
5.5
2.0
3.0
4.5
3.0
4.5
2.0
3.0
4.5
3.0
4.5
0to
5.5
5.5
IO=-50 µA
=-50 µA
I
O
=-50 µA
I
O
=-4 mA
I
O
I
=-8 mA
O
IO=50 µA
I
=50 µA
O
=50 µA
I
O
=4 mA
I
O
I
=8 mA
O
VI=5.5VorGND
V
I=VCC
or GND
1.9 2.0 1.9 1.9
2.9 3.0 2.9 2.9
4.4 4.5 4.4 4.4
2.58 2.48 2.4
3.94 3.8 3.7
0.3V
CC
0.3V
CC
0.0 0.1 0.1 0.1
0.0 0.1 0.1 0.1
0.0 0.1 0.1 0.1
0.36 0.44 0.55
0.36 0.44 0.55
± 0.1 ± 1 ± 1 µA
11020µA
74V1G00
Unit
0.3V
CC
V
V
V
V
AC ELECTRICAL CHARACTERISTICS (Input t
r=tf
=3ns)
Test Condition Value
= 25°C
Symbol Parameter
t
PLHtPHL
(*) Voltage rangeis 3.3V ± 0.3V
(**) Voltage range is 5.0V ± 0.5V
Propagation Delay
Time
V
3.3
3.3
5.0
5.0
C
CC
(V)
L
(pF)
(*)
15 5.0 7.9 1.0 9.5 1.0 10.5
(*)
50 5.7 9.0 1.0 10.5 1.0 11.5
(**)
15 3.7 5.5 1.0 6.5 1.0 7.5
(**)
50 4.3 7.5 1.0 8.5 1.0 9.5
T
A
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
Unit
ns
CAPACITIVE CHARACTERISTICS
Test Condition Value
T
Symbol Parameter
C
C
Input Capacitance
IN
Power Dissipation
PD
Capacitance
(note 1)
1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
= 25°C
A
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
410 10 10pF
11 pF
CC(opr)=CPDxVCCxfIN+ICC
Unit
3/9