ST 74V1G00 User Manual
74V1G00
SINGLE 2-INPUT NAND GATE
■HIGH SPEED: tPD = 3.7ns (TYP.) at VCC = 5V
■LOW POWER DISSIPATION: ICC = 1 A(MAX.) at TA=25°C
■HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.)
■POWER DOWN PROTECTION ON INPUTS
■SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8mA (MIN) at VCC = 4.5V
■BALANCED PROPAGATION DELAYS: tPLH tPHL
■OPERATING VOLTAGE RANGE: VCC(OPR) = 2V to 5.5V
■IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74V1G00 is an advanced high-speed CMOS SINGLE 2-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology.
The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output.
SOT23-5L SOT323-5L
ORDER CODES
PACKAGE |
T & R |
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SOT23-5L |
74V1G00STR |
SOT323-5L |
74V1G00CTR |
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Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V.
PIN CONNECTION AND IEC LOGIC SYMBOLS
April 2004 |
1/9 |
74V1G00
INPUT EQUIVALENT CIRCUIT |
PIN DESCRIPTION |
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PIN N° |
SYMBOL |
NAME AND FUNCTION |
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1 |
1A |
Data Input |
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2 |
1B |
Data Input |
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4 |
1Y |
Data Output |
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3 |
GND |
Ground (0V) |
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5 |
VCC |
Positive Supply Voltage |
TRUTH TABLE
A |
B |
Y |
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L |
L |
H |
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L |
H |
H |
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H |
L |
H |
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H |
H |
L |
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ABSOLUTE MAXIMUM RATINGS
Symbol |
Parameter |
Value |
Unit |
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VCC |
Supply Voltage |
-0.5 to +7.0 |
V |
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VI |
DC Input Voltage |
-0.5 to +7.0 |
V |
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VO |
DC Output Voltage |
-0.5 to VCC + 0.5 |
V |
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IIK |
DC Input Diode Current |
- 20 |
mA |
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IOK |
DC Output Diode Current |
± |
20 |
mA |
IO |
DC Output Current |
± |
25 |
mA |
ICC or IGND |
DC VCC or Ground Current |
± |
50 |
mA |
Tstg |
Storage Temperature |
-65 to +150 |
°C |
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TL |
Lead Temperature (10 sec) |
260 |
°C |
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Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied.
RECOMMENDED OPERATING CONDITIONS
Symbol |
Parameter |
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Value |
Unit |
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VCC |
Supply Voltage |
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2 to 5.5 |
V |
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VI |
Input Voltage |
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0 to 5.5 |
V |
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VO |
Output Voltage |
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0 to VCC |
V |
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Top |
Operating Temperature |
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-55 to 125 |
°C |
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dt/dv |
Input Rise and Fall Time (note 1) (VCC = 3.3 ± |
0.3V) |
0 to 100 |
ns/V |
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(VCC = 5.0 ± |
0.5V) |
0 to 20 |
ns/V |
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1) VIN from 30% to 70% of VCC
2/9
74V1G00
DC SPECIFICATIONS
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Test Condition |
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Value |
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Symbol |
Parameter |
VCC |
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TA = 25°C |
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-40 to 85°C |
-55 to 125°C |
Unit |
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(V) |
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Min. |
Typ. |
Max. |
Min. |
Max. |
Min. |
Max. |
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VIH |
High Level Input |
2.0 |
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1.5 |
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1.5 |
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1.5 |
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Voltage |
3.0 to |
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0.7VCC |
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0.7VCC |
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0.7VCC |
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V |
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5.5 |
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VIL |
Low Level Input |
2.0 |
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0.5 |
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0.5 |
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0.5 |
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Voltage |
3.0 to |
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0.3VCC |
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0.3VCC |
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0.3VCC |
V |
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5.5 |
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VOH |
High Level Output |
2.0 |
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IO=-50 A |
1.9 |
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2.0 |
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1.9 |
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1.9 |
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Voltage |
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3.0 |
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IO=-50 A |
2.9 |
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3.0 |
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2.9 |
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2.9 |
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4.5 |
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IO=-50 A |
4.4 |
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4.5 |
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4.4 |
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4.4 |
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V |
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3.0 |
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IO=-4 mA |
2.58 |
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2.48 |
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2.4 |
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4.5 |
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IO=-8 mA |
3.94 |
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3.8 |
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3.7 |
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VOL |
Low Level Output |
2.0 |
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IO=50 A |
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0.0 |
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0.1 |
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0.1 |
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0.1 |
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Voltage |
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3.0 |
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IO=50 A |
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0.0 |
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0.1 |
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0.1 |
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0.1 |
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4.5 |
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IO=50 A |
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0.0 |
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0.1 |
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0.1 |
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0.1 |
V |
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3.0 |
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IO=4 mA |
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0.36 |
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0.44 |
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0.55 |
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4.5 |
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IO=8 mA |
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0.36 |
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0.44 |
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0.55 |
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II |
Input Leakage |
0 to |
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VI = 5.5V or GND |
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± |
0.1 |
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± 1 |
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± 1 |
A |
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Current |
5.5 |
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ICC |
Quiescent Supply |
5.5 |
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VI = VCC or GND |
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1 |
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10 |
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20 |
A |
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Current |
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AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3ns)
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Test Condition |
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Value |
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Symbol |
Parameter |
VCC |
CL |
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TA = 25°C |
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-40 to 85°C |
-55 to 125°C |
Unit |
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(V) |
(pF) |
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Min. |
Typ. |
Max. |
Min. |
Max. |
Min. |
Max. |
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tPLH tPHL |
Propagation Delay |
3.3(*) |
15 |
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5.0 |
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7.9 |
1.0 |
9.5 |
1.0 |
10.5 |
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Time |
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3.3(*) |
50 |
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5.7 |
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9.0 |
1.0 |
10.5 |
1.0 |
11.5 |
ns |
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5.0(**) |
15 |
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3.7 |
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5.5 |
1.0 |
6.5 |
1.0 |
7.5 |
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5.0(**) |
50 |
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4.3 |
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7.5 |
1.0 |
8.5 |
1.0 |
9.5 |
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(*) Voltage range is 3.3V ± |
0.3V |
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(**) Voltage range is 5.0V ± |
0.5V |
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CAPACITIVE CHARACTERISTICS
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Test Condition |
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Value |
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Symbol |
Parameter |
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TA = 25°C |
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-40 to 85°C |
-55 to 125°C |
Unit |
||||
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Min. |
Typ. |
Max. |
Min. |
Max. |
Min. |
Max. |
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CIN |
Input Capacitance |
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4 |
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10 |
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10 |
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10 |
pF |
CPD |
Power Dissipation |
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11 |
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pF |
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Capacitance |
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(note 1) |
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1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC
3/9
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