The 74LX3G07 is a low voltage CMOS triple
buffer/driver (open drain) fabricated with submicron silicon gate and double-layer metal wiring
2
C
MOS technology.
The internal circuit composed of 2 stages
including buffer output, provides high noise
immunity and stable output.
Power down protection is provided on input and 0
to 7 V can be accepted on input with no regards
to the supply voltage. This device can be used to
interface 5 to 3 V.
Table 1.Device summary
Order codePackagePackaging
74LX3G07BJRFlip-chip 8Tape and reel
March 2009 Rev 21/14
www.st.com
14
Pin connection74LX3G07
1 Pin connection
Figure 1.Pin connection and IEC symbols
Bump view Top view
GND
2A
3Y
1A
4
5
3
2
1
2Y
3A
6
7
1Y
V
8
C
C
1A
3Y
2A
GND
1
2 7
3
4 5
Table 2.Pin assignments
Pin numberSymbolName and function
11AData input 1
23YData output 3
32AData input 2
4GNDGround (0V)
52YData output 2
63AData input 3
71YData output 1
8
6
V
C
C
1Y
3A
2Y
8V
CC
Table 3.Truth table
nAnY
LL
HZ
Z: High impedance
2/14
Positive supply voltage
74LX3G07Pin connection
Figure 2.Input and output equivalent circuit
V
CC
Overvoltage
control
Input
Output
ESD
protection
GNDGNDGND
ESD
protection
GND
GND
CS08973
3/14
Maximum rating74LX3G07
2 Maximum rating
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Table 4.Absolute maximum ratings
SymbolParameterValueUnit
V
V
V
V
I
I
OK
I
I
CC
I
GND
T
T
Supply voltage-0.5 to +7.0V
CC
DC input voltage-0.5 to +7.0V
I
DC output voltage (VCC= 0 V)-0.5 to +7.0V
O
DC output voltage (high or low state)-0.5 to VCC + 0.5V
O
DC input diode current- 50mA
IK
DC output diode current- 50mA
DC output current± 50mA
O
DC supply current per supply pin± 100mA
DC ground current per supply pin± 100mA
Storage temperature-65 to +150°C
stg
Lead temperature (10 sec)300°C
L
4/14
74LX3G07Maximum rating
2.1 Recommended operating conditions
Table 5.Recommended operating conditions
SymbolParameterValueUnit
V
V
V
I
I
I
I
I
T
Supply voltage1.65 to 5.5V
CC
V
Input voltage0 to 5.5V
I
Output voltage (VCC= 0 V)0 to 5.5V
O
Output voltage (high or low state)0 to V
O
High or low level output current (VCC= 4.5 to 5.5 V)+ 32mA
OL
High or low level output current (VCC= 3.0 to 3.6 V)+24mA
OL
High or low level output current (VCC= 2.7 to 3.0 V)+12mA
OL
High or low level output current (VCC= 2.3 to 2.7 V)+8mA
OL
High or low level output current (VCC= 1.65 to 2.3 V)+4mA
OL
Operating temperature-40 to 85°C
op
CC
V
dt/dvInput rise and fall time0 to 10ns/V
5/14
Electrical characteristics74LX3G07
3 Electrical characteristics
Table 6.DC specifications
Test conditionValue
SymbolParameter
V
V
V
High level input
IH
voltage
Low level input
IL
voltage
Low level output
OL
voltage
High impedance
I
OZ
output leakage
current
Input leakage
I
I
current
I
I
CC
Power off leakage
off
current
Quiescent supply
current
V
CC
(V)
1.65 − 1.950.65 V
3.0 − 5.50.7 V
1.65 − 1.950.35 V
3.0 −5.50.3 V
− 4.5I
1.65
1.65I
2.3I
3.0
4.5I
= 100 μA0.1
O
= 4 mA0.45
O
=8mA0.3
O
I
=16mA0.4
O
=24mA0.55
I
O
=32mA0.55
O
-40 to 85 °C
MinMax
CC
CC
CC
CC
CC
CC
3.6VI= 5.5 V±10μA
− 5.5V
1.65
0V
1.65
− 5.5V
3.6
=0−5.5 V±5μA
I
or VO=5.5V10μA
I
or GND10
I=VCC
or VO= 3.6 to
V
I
5.5 V
±10
Unit
V2.3 −2.70.7 V
V2.3 −2.70.3 V
V
μA
6/14
74LX3G07Electrical characteristics
Table 7.AC electrical characteristics
Test conditionsValue
SymbolParameter
V
(V)
CC
C
(pF)
R
t
L
(Ω)
= t
1
s
(ns)
-40 to 85 °C
r
MinMax
1.65 −1.953010002.01.57.8
2.3
t
PLZ
Propagation delay
time
− 2.7305002.01.04.3
− 3.6505002.51.13.7
3.0
4.5
− 5.5505002.51.02.9
1.65 −1.953010002.01.57.8
2.3
t
PZL
Table 8.Capacitive characteristics
Propagation delay
time
− 2.7305002.01.04.3
3.0
− 3.6505002.51.13.7
−5.5505002.51.02.9
4.5
Test conditionsValue
SymbolParameter
C
C
C
Input capacitance3.3VIN=0 or V
IN
Output capacitance3.3VIN=0 or V
OUT
Power dissipation
PD
capacitance
(1)
V
(V)
1.8
CC
f
=10MHz
IN
CC
CC
TA=25 °C
MinTypMax
2.5pF
4pF
8
3.38
1. CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the
operating current consumption without load. (Refer to test circuit). Average operating current can be
obtained by the following equation: I
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
® is an ST trademark.
Figure 5.Flip-chip 8 package outline
1. Drawing not to scale.
9/14
Package mechanical data74LX3G07
Table 10.Flip-chip 8 mechanical data
Millimeters
Symbol
MinTypMax
A0.535 0.58 0.625
A10.18 0.205 0.23
A20.355 0.375 0.395
b0.2150.2550.295
D1.85 1.9 1.95
D11.5
e0.45 0.5 0.55
E0.850.90.95
E10.45 0.5 0.55
SE0.25
f0.190.20.21
ccc0.08
Figure 6.Flip-chip 8 footprint
GRID PLACEMENT AREA
A
B
1.5
0.5
12
3
0.5
4
0.22
10/14
74LX3G07Package mechanical data
Figure 7.Flip-chip 8 tape and reel
Figure 8.Tape orientation
5SERDIRECTIONOFFEED
!-6
!-6
11/14
Package mechanical data74LX3G07
Figure 9.Reel information
12/14
74LX3G07Revision history
5 Revision history
Table 11.Document revision history
DateRevisionChanges
10-Jul-20081Initial release.
19-Mar-20092
Preliminary status promoted to datasheet. Updated Section 4:
Package mechanical data.
13/14
74LX3G07
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