74LVX245
LOW VOLTAGE CMOS OCTAL BUS TRANSCEIVER (3-STATE) WITH 5V TOLERANT INPUTS
■HIGH SPEED:
tPD=4.7ns (TYP.) at VCC = 3.3V
■5V TOLERANT INPUTS
■POWER-DOWN PROTECTION ON INPUTS
■INPUT VOLTAGE LEVEL:
VIL = 0.8V, VIH = 2V at VCC =3V
■LOW POWER DISSIPATION: ICC = 4 A (MAX.) at TA=25°C
■LOW NOISE:
VOLP = 0.5V (TYP.) at VCC =3.3V
■SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 4 mA (MIN) at VCC =3V
■BALANCED PROPAGATION DELAYS: tPLH tPHL
■OPERATING VOLTAGE RANGE:
VCC(OPR) = 2V to 3.6V (1.2V Data Retention)
■PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 245
■IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74LVX245 is a low voltage CMOS OCTAL BUS BUFFER (3-STATE) fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. It is ideal for low power, battery operated and low noise 3.3V applications.
This IC is intended for two-way asynchronous communication between data busses; the direction of data transmission is determined by
SOP TSSOP
PACKAGE |
T & R |
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SOP |
74LVX245MTR |
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TSSOP |
74LVX245TTR |
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DIR input. The enable input G can be used to disable the device so that the busses are effectively isolated.
Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage.
This device can be used to interface 5V to 3V. It combines high speed performance with the true CMOS low power consumption.
All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage.
All floating bus terminals during High Z state must be held HIGH or LOW.
August 2004 |
Rev. 5 |
1/12 |
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74LVX245
Figure 2: Input Equivalent Circuit |
Table 2: Pin Description |
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PIN N° |
SYMBOL |
NAME AND FUNCTION |
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1 |
DIR |
Directional Control |
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2, 3, 4, 5, 6, |
A1 to A8 |
Data Inputs/Outputs |
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7, 8, 9 |
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18, 17, 16, |
B1 to B8 |
Data Inputs/Outputs |
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15, 14, 13, |
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12, 11 |
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19 |
G |
Output Enable Input |
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10 |
GND |
Ground (0V) |
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20 |
VCC |
Positive Supply Voltage |
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INPUTS |
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FUNCTION |
OUTPUT |
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G |
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DIR |
A BUS |
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B BUS |
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L |
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L |
OUTPUT |
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INPUT |
A = B |
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L |
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H |
INPUT |
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OUTPUT |
B = A |
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H |
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X |
Z |
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Z |
Z |
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X :Don‘t Care |
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Z : High Impedance |
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Table 4: Absolute Maximum Ratings |
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Symbol |
Parameter |
Value |
Unit |
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VCC |
Supply Voltage |
-0.5 to +7.0 |
V |
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VI |
DC Input Voltage |
-0.5 to +7.0 |
V |
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VO |
DC Output Voltage |
-0.5 to VCC + 0.5 |
V |
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IIK |
DC Input Diode Current |
- 20 |
mA |
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IOK |
DC Output Diode Current |
± |
20 |
mA |
IO |
DC Output Current |
± |
25 |
mA |
ICC or IGND |
DC VCC or Ground Current |
± |
50 |
mA |
Tstg |
Storage Temperature |
-65 to +150 |
°C |
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TL |
Lead Temperature (10 sec) |
300 |
°C |
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied
Symbol |
Parameter |
Value |
Unit |
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VCC |
Supply Voltage (note 1) |
2 to 3.6 |
V |
VI |
Input Voltage |
0 to 5.5 |
V |
VO |
Output Voltage |
0 to VCC |
V |
Top |
Operating Temperature |
-55 to 125 |
°C |
dt/dv |
Input Rise and Fall Time (note 2) (VCC = 3V) |
0 to 100 |
ns/V |
1)Truth Table guaranteed: 1.2V to 3.6V
2)VIN from 0.8V to 2.0V
2/12
74LVX245
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Test Condition |
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Value |
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Symbol |
Parameter |
VCC |
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TA = 25°C |
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-40 to 85°C |
-55 to 125°C |
Unit |
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(V) |
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Min. |
Typ. |
Max. |
Min. |
Max. |
Min. |
Max. |
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VIH |
High Level Input |
2.0 |
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1.5 |
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1.5 |
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1.5 |
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Voltage |
3.0 |
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2.0 |
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2.0 |
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2.0 |
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V |
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3.6 |
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2.4 |
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2.4 |
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2.4 |
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VIL |
Low Level Input |
2.0 |
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0.5 |
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0.5 |
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0.5 |
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Voltage |
3.0 |
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0.8 |
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0.8 |
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0.8 |
V |
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3.6 |
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0.8 |
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0.8 |
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0.8 |
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VOH |
High Level Output |
2.0 |
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IO=-50 A |
1.9 |
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2.0 |
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1.9 |
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1.9 |
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Voltage |
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3.0 |
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IO=-50 A |
2.9 |
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3.0 |
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2.9 |
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2.9 |
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V |
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3.0 |
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IO=-4 mA |
2.58 |
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2.48 |
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2.4 |
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VOL |
Low Level Output |
2.0 |
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IO=50 A |
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0.0 |
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0.1 |
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0.1 |
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0.1 |
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Voltage |
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3.0 |
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IO=50 A |
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0.0 |
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0.1 |
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0.1 |
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0.1 |
V |
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3.0 |
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IO=4 mA |
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0.36 |
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0.44 |
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0.55 |
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IOZ |
High Impedance |
3.6 |
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VI = VIH or VIL |
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± |
0.25 |
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± |
2.5 |
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± |
5 |
A |
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Output Leakage |
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VO = VCC or GND |
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Current |
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II |
Input Leakage |
3.6 |
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VI = 5V or GND |
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± |
0.1 |
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± |
1 |
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± |
1 |
A |
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Current |
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ICC |
Quiescent Supply |
3.6 |
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VI = VCC or GND |
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4 |
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40 |
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40 |
A |
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Current |
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Table 7: Dynamic Switching Characteristics |
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Test Condition |
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Value |
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Symbol |
Parameter |
VCC |
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TA = 25°C |
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-40 to 85°C |
-55 to 125°C |
Unit |
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(V) |
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Min. |
Typ. |
Max. |
Min. |
Max. |
Min. |
Max. |
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VOLP |
Dynamic Low |
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0.5 |
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0.8 |
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Voltage Quiet |
3.3 |
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VOLV |
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-0.8 |
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-0.5 |
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Output (note 1, 2) |
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VIHD |
Dynamic High |
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CL = 50 pF |
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Voltage Input |
3.3 |
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2.0 |
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V |
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(note 1, 3) |
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VILD |
Dynamic Low |
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Voltage Input |
3.3 |
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0.8 |
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(note 1, 3) |
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1)Worst case package.
2)Max number of outputs defined as (n). Data inputs are driven 0V to 3.3V, (n-1) outputs switching and one output at GND.
3)Max number of data inputs (n) switching. (n-1) switching 0V to 3.3V. Inputs under test switching: 3.3V to threshold (VILD), 0V to threshold (VIHD), f=1MHz.
3/12
74LVX245
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Test Condition |
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Value |
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Symbol |
Parameter |
VCC |
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CL |
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TA = 25°C |
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-40 to 85°C |
-55 to 125°C |
Unit |
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(V) |
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(pF) |
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Min. |
Typ. |
Max. |
Min. |
Max. |
Min. |
Max. |
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tPLH |
Propagation Delay |
2.7 |
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15 |
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6.1 |
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11.4 |
1.0 |
13.5 |
1.0 |
15.0 |
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tPHL |
Time |
2.7 |
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50 |
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8.6 |
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14.9 |
1.0 |
17.0 |
1.0 |
18.0 |
ns |
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3.3(*) |
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15 |
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4.5 |
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7.1 |
1.0 |
8.5 |
1.0 |
9.5 |
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3.3(*) |
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50 |
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7.2 |
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10.6 |
1.0 |
12.0 |
1.0 |
13.0 |
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tPZL |
Output Enable |
2.7 |
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15 |
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7.1 |
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13.8 |
1.0 |
16.5 |
1.0 |
17.5 |
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tPZH |
Time |
2.7 |
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50 |
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9.6 |
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17.3 |
1.0 |
20.0 |
1.0 |
21.0 |
ns |
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3.3(*) |
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15 |
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5.5 |
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8.8 |
1.0 |
10.5 |
1.0 |
12. |
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3.3(*) |
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50 |
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8.0 |
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12.3 |
1.0 |
14.0 |
1.0 |
15.0 |
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tPLZ |
Output Disable |
2.7 |
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50 |
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11.6 |
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16.0 |
1.0 |
19.0 |
1.0 |
20.5 |
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tPHZ |
Time |
3.3(*) |
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50 |
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9.7 |
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11.4 |
1.0 |
13.0 |
1.0 |
14.5 |
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tOSLH |
Output to Output |
2.7 |
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50 |
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0.5 |
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1.0 |
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1.5 |
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1.5 |
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Skew Time (note |
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ns |
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tOSHL |
3.3(*) |
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50 |
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0.5 |
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1.0 |
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1.5 |
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1.5 |
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1,2) |
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1)Skew is defined as the absolute value of the difference between the actual propagation delay for any two outputs of the same device switching in the same direction, either HIGH or LOW
2)Parameter guaranteed by design
(*) Voltage range is 3.3V ± 0.3V
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Test Condition |
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Value |
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Symbol |
Parameter |
VCC |
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TA = 25°C |
-40 to 85°C |
-55 to 125°C |
Unit |
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(V) |
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Min. |
Typ. |
Max. |
Min. |
Max. |
Min. |
Max. |
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CIN |
Input Capacitance |
3.3 |
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5 |
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10 |
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10 |
pF |
Ci/o |
Input/Output |
3.3 |
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10 |
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15 |
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15 |
pF |
Capacitance |
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CPD |
Power Dissipation |
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fIN = 10MHz |
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32 |
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pF |
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Capacitance |
3.3 |
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(note 1) |
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1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/8 (per circuit)
4/12