ST 74LVX126 User Manual

74LVX126
LOW VOLTAGE CMOS QUAD BUS BUFFERS (3-STATE)
WITH 5V TOLERANT INPUTS
HIGH SPEED:
t
=4.4ns (TY P.) at VCC = 3.3V
PD
5V TOLERANT INPUTS
INPUT VOLTAGE LEVEL:
V
= 0.8V, VIH = 2V at VCC =3V
IL
LOW POWER DISSIPATION:
I
= 2 µA (MAX.) at TA=25°C
CC
LOW NOISE:
V
= 0.3V (TYP.) at VCC =3.3V
OLP
SYMMETRICAL OUTPUT IMPEDANCE:
|I
| = IOL = 4 mA (MIN) at VCC =3V
OH
BALANCED PROPAGATION DELAYS:
t
t
PLH
PHL
OPERATING VOLTAGE RANGE:
V
(OPR) = 2V to 3.6V (1.2V Data Retention)
CC
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 126
IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74LVX126 is a low voltage CMOS QUAD BUS BUFFERs fabricated with sub-micron silicon gate and double-layer metal wiring C
2
MOS technology. It is ideal for low power, battery operated and low noise 3.3V applications.
TSSOPSOP

Table 1: Order Codes

PACKAGE T & R
SOP 74LVX126MTR
TSSOP 74LVX126TTR
This device requires the 3-STATE control input G to be set low to plac e the output go i n to the hi gh impedance state. Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V. It combines high speed performance with the true CMOS low power consumption. All inputs and outputs are equipped with protection circuits against static disc harge, giving them 2KV ESD immunity and transient excess voltage.

Figure 1: Pin C onnection And IEC Logic Symbol s

Rev. 2
1/12August 2004
74LVX126

Figure 2: Input Equivalent Circuit Table 2: Pin Description

PIN N° SYMBOL NAME AND FUNCTION
1, 4, 10, 13 1G to 4G Output Enable Inputs
2, 5, 9, 12 1A to 4A Data Inputs 3, 6, 8, 11 1Y to 4Y Data Outputs
7 GND Ground (0V)
14

Table 3: Truth Table

AGY
XLZ
LHL
HHH
X :Don‘t Care Z : High Impedance

Table 4: Absolute Maximum Ratings

Symbol Parameter Value Unit
V
V
V
I
I
OK
I
or I
I
CC
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied
Supply Voltage
CC
DC Input Voltage
I
DC Output Voltage -0.5 to VCC + 0.5
O
DC Input Diode Current
IK
DC Output Diode Current DC Output Current
O
DC VCC or Ground Current
GND
Storage Temperature
stg
Lead Temperature (10 sec)
L

Table 5: Recommended Operating Conditions

V
CC
Positive Supply Voltage
-0.5 to +7.0 V
-0.5 to +7.0 V
- 20 mA
± 20 mA ± 25 mA ± 50 mA
-65 to +150 °C 300 °C
V
Symbol Parameter Value Unit
V
V V T
dt/dv
1) Truth T abl e guarante ed: 1.2V to 3.6V
2) VIN from 0.8V to 2.0V
Supply Voltage (note 1)
CC
Input Voltage
I
Output Voltage 0 to V
O
Operating Temperature
op
Input Rise and Fall Time (note 2) (V
CC
= 3V)
2 to 3.6 V 0 to 5.5 V
CC
-55 to 125 °C 0 to 100 ns/V
2/12
V

Table 6: DC Specifications

Symbol Parameter
V
V
V
High Level Input
IH
Voltage
V
Low Level Input
IL
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
High Impedance
I
OZ
Output Leakage Current
I
Input Leakage
I
Current
I
Quiescent Supply
CC
Current
74LVX126
Test Condition Value
= 25°C
T
V
CC
(V)
A
Min. Typ. Max. Min. Max. Min. Max.
2.0 1.5 1.5 1.5 222
3.6
2.4 2.4 2.4
2.0 0.5 0.5 0.5
3.6 0.8 0.8 0.8
=-50 µA
2.0
3.0
2.0
3.0
3.6
3.6
3.6
V
VO = VCC or GND
= 5.5V or GND
V
I
V
I
I
O
=-50 µA
I
O
=-4 mA
I
O
IO=50 µA I
=50 µA
O
=4 mA
I
O
= VIH or V
I
= VCC or GND
1.9 2.0 1.9 1.9
2.9 3.0 2.9 2.9
2.58 2.48 2.4
0.0 0.1 0.1 0.1
0.0 0.1 0.1 0.1
IL
±0.25 ± 2.5 ± 5 µA
-40 to 85°C -55 to 125°C
0.36 0.44 0.55
± 0.1 ± 1 ± 1 µA
22020µA
Unit
V3.0
V3.0 0.8 0.8 0.8
V3.0
V3.0

Table 7: Dynamic Switching Characteristics

Test Condition Value
= 25°C
Symbol Parameter
V V
Dynamic Low
OLP
Voltage Quiet
OLV
Output (note 1, 2)
V
CC
(V)
3.3
T
A
Min. Typ. Max. Min. Max. Min. Max.
0.3 0.5
-0.5 -0.3
Dynamic High
V
IHD
Voltage Input
3.3 2.0
= 50 pF
C
L
(note 1, 3) Dynamic Low
V
ILD
Voltage Input
3.3 0.8
(note 1, 3)
1) Worst case package.
2) Max number of outp ut s defined as (n). Data inp ut s are driven 0V to 3.3V, (n-1) outputs switc hi ng and one out put at GND.
3) Max number of data inputs (n) switching. (n-1) switching 0V to 3.3V. Inputs under test switching: 3.3V to threshold (V ), f=1MHz.
(V
IHD
-40 to 85°C -55 to 125°C
ILD
Unit
V
), 0V to thresho l d
3/12
74LVX126

Table 8: AC Electrical Characteristics (Input tr = tf = 3ns)

Test Condition Value
= 25°C
Symbol Parameter
t
Propagation Delay
PLH PHL
PZL
PZH
PLZ
PHZ
Time
Output Enable Time
Output Disable Time
Output to Output Skew Time (note 1,2)
0.3V
t
t t
t t
t
OSLH
t
OSHL
1) Skew is defined as the absolute value of the difference between the actual propagation delay for any two outputs of the same device switch-
ing in the sa m e di rection, ei ther HIGH or LOW
2) Param eter guaran teed by design
(*) Voltage range is 3.3V ±
V
C
CC
(V)
L
(pF)
2.7 15 5.8 8.0 1.0 9.6 1.0 11.5
2.7 50 7.0 10.5 1.0 12.6 1.0 15.0
(*)
3.3
3.3
15 4.4 6.2 1.0 8.5 1.0 9.5
(*)
50 5.9 9.7 1.0 12.0 1.0 13.5
2.7 15 8.9 11.5 1.0 12.5 1.0 12.5
2.7 50 10.0 14.0 1.0 16.0 1.0 16.0
(*)
3.3
3.3
15 8.0 10.4 1.0 11.5 1.0 11.5
(*)
50 8.9 12 1.0 13.0 1.0 13.0
2.7 50 7.2 11.0 1.0 13.0 1.0 15.6
(*)
3.3
50 6.0 8.5 1.0 11.0 1.0 13.0
2.7 50 0.5 1.0 1.5 1.5
(*)
3.3
50 0.5 1.0 1.5 1.5
T
A
Min. Typ. Max. Min. Max. Min. Max.

Table 9: Capacitive Characteristics

-40 to 85°C -55 to 125°C
Unit
ns
ns
ns
ns
Test Condition Value
Symbol Parameter
C
C
C
Input Capacitance
IN
Output
OUT
Capacitance Power Dissipation
PD
Capacitance
T
V
CC
(V)
A
Min. Typ. Max. Min. Max. Min. Max.
3.3 4 10 10 10 pF
3.3 6 pF
3.3 14 pF
-40 to 85°C -55 to 125°C
Unit
= 25°C
(note 1)
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
= CPD x VCC x fIN + ICC/4 (per c ircuit )
CC(opr)
4/12
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