ST 74LVX05 User Manual

74LVX05

LOW VOLTAGE CMOS HEX INVERTER (OPEN DRAIN) WITH 5V TOLERANT INPUTS

HIGH SPEED:

tPD = 4.8ns (TYP.) at VCC = 3.3V

5V TOLERANT INPUTS

INPUT VOLTAGE LEVEL: VIL=0.8V, VIH=2V at VCC=3V

LOW POWER DISSIPATION: ICC = 2 A (MAX.) at TA=25°C

LOW NOISE:

VOLP = 0.3V (TYP.) at VCC = 3.3V

OPERATING VOLTAGE RANGE:

VCC(OPR) = 2V to 3.6V (1.2V Data Retention)

PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 05

IMPROVED LATCH-UP IMMUNITY

POWER DOWN PROTECTION ON INPUTS

DESCRIPTION

The 74LVX05 is a low voltage CMOS OPEN DRAIN HEX INVERTER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. It is ideal for low power, battery operated and low noise 3.3V applications.

The internal circuit is composed of 3 stages including buffer output, which provides high noise immunity and stable output.

SOP TSSOP

Table 1: Order Codes

PACKAGE

T & R

 

 

SOP

74LVX05MTR

 

 

TSSOP

74LVX05TTR

 

 

Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage.

This device can be used to interface 5V to 3V system. It combines high speed performance with the true CMOS low power consumption.

All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage.

Figure 1: Pin Connection And IEC Logic Symbols

August 2004

Rev. 5

1/11

 

 

ST 74LVX05 User Manual

74LVX05

Figure 2: Input Equivalent Circuit

Table 2: Pin Description

 

 

 

 

 

PIN N°

SYMBOL

 

NAME AND FUNCTION

 

 

1, 3, 5, 9, 11,

1A to 6A

Data Inputs

 

 

 

13

 

 

 

 

 

 

 

 

 

2, 4, 6, 8, 10,

1Y to 6Y

Data Outputs

 

 

 

12

 

 

 

 

 

 

 

 

 

7

GND

Ground (0V)

 

 

 

14

VCC

Positive Supply Voltage

 

 

Table 3: Truth Table

 

 

 

 

 

A

 

 

Y

 

 

 

L

 

 

Z

 

 

 

H

 

 

L

 

 

 

Z: High Impedance

 

 

 

 

Table 4: Absolute Maximum Ratings

 

 

 

 

 

Symbol

Parameter

 

 

Value

Unit

VCC

Supply Voltage

 

-0.5 to +7.0

V

VI

DC Input Voltage

 

-0.5 to +7.0

V

VO

DC Output Voltage

 

-0.5 to VCC + 0.5

V

IIK

DC Input Diode Current

 

 

- 20

mA

IOK

DC Output Diode Current

 

 

±

20

mA

IO

DC Output Current

 

 

±

25

mA

ICC or IGND

DC VCC or Ground Current

 

 

±

50

mA

Tstg

Storage Temperature

 

-65 to +150

°C

TL

Lead Temperature (10 sec)

 

 

300

°C

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied.

Table 5: Recommended Operating Conditions

Symbol

Parameter

Value

Unit

 

 

 

 

VCC

Supply Voltage (note 1)

2 to 3.6

V

VI

Input Voltage

0 to 5.5

V

VO

Output Voltage

0 to VCC

V

Top

Operating Temperature

-55 to 125

°C

dt/dv

Input Rise and Fall Time (note 2) (VCC = 3.3V)

0 to 100

ns/V

1)Truth Table guaranteed: 1.2V to 3.6V

2)VIN from 0.8V to 2.0V

2/11

74LVX05

Table 6: DC Specifications

 

 

 

Test Condition

 

 

 

 

Value

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

VCC

 

 

TA = 25°C

 

-40 to 85°C

-55 to 125°C

Unit

 

 

(V)

 

 

Min.

Typ.

Max.

Min.

Max.

Min.

Max.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VIH

High Level Input

2.0

 

 

1.5

 

 

 

1.5

 

 

1.5

 

 

 

 

Voltage

3.0

 

 

2.0

 

 

 

2.0

 

 

2.0

 

 

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3.6

 

 

2.4

 

 

 

2.4

 

 

2.4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VIL

Low Level Input

2.0

 

 

 

 

 

0.5

 

0.5

 

0.5

 

 

Voltage

3.0

 

 

 

 

 

0.8

 

0.8

 

0.8

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3.6

 

 

 

 

 

0.8

 

0.8

 

0.8

 

VOL

Low Level Output

2.0

 

IO=50 A

 

0.0

 

0.1

 

0.1

 

0.1

 

 

Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3.0

 

IO=50 A

 

0.0

 

0.1

 

0.1

 

0.1

V

 

 

 

 

 

 

 

 

 

3.0

 

IO=4 mA

 

 

0.36

 

0.44

 

0.55

 

II

Input Leakage

3.6

 

VI = 5V or GND

 

 

±

0.1

 

±

1

 

±

1

A

 

Current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IOZ

High Impedance

3.6

 

VI = VIH or VIL

 

 

±

0.25

 

±

2.5

 

±

5

A

 

Output Leakage

 

VO = VCC or GND

 

 

 

 

 

Current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ICC

Quiescent Supply

3.6

 

VI = VCC or GND

 

 

 

2

 

20

 

20

A

 

Current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Table 7: Dynamic Switching Characteristics

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Test Condition

 

 

 

 

Value

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

VCC

 

 

TA = 25°C

 

-40 to 85°C

-55 to 125°C

Unit

 

 

(V)

 

 

Min.

Typ.

Max.

Min.

Max.

Min.

Max.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VOLP

Dynamic Low

 

 

 

 

0.3

 

0.5

 

 

 

 

 

 

 

 

Voltage Quiet

3.3

 

 

 

 

 

 

 

 

 

 

 

 

 

VOLV

 

 

-0.5

-0.3

 

 

 

 

 

 

 

 

 

Output (note 1, 2)

 

 

 

 

 

 

 

 

 

 

 

 

VIHD

Dynamic High

3.3

 

CL = 50 pF

2

 

 

 

 

 

 

 

 

 

V

 

Voltage Input (note

 

 

 

 

 

 

 

 

 

 

 

 

 

1, 3)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VILD

Dynamic Low

3.3

 

 

 

 

 

0.8

 

 

 

 

 

 

 

 

Voltage Input (note

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1, 3)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1)Worst case package.

2)Max number of outputs defined as (n). Data inputs are driven 0V to 3.3V, (n-1) outputs switching and one output at GND.

3)Max number of data inputs (n) switching. (n-1) switching 0V to 3.3V. Inputs under test switching: 3.3V to threshold (VILD), 0V to threshold (VIHD), f=1MHz.

3/11

74LVX05

Table 8: AC Electrical Characteristics (Input tr = tf = 3ns)

 

 

 

Test Condition

 

 

 

 

Value

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

VCC

 

CL

 

TA = 25°C

 

-40 to 85°C

-55 to 125°C

Unit

 

 

(V)

 

(pF)

 

Min.

Typ.

Max.

Min.

Max.

Min.

Max.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tPZL

Propagation Delay

2.7

 

15

 

 

5.4

 

7.7

 

9.0

 

10.0

 

 

Time

2.7

 

50

 

 

6.0

 

8.7

 

10.0

 

11.5

ns

 

 

 

 

 

 

 

 

 

 

3.3(*)

 

15

 

 

4.8

 

7.0

 

8.1

 

9.0

 

 

 

 

 

 

 

 

 

 

 

3.3(*)

 

50

 

 

5.3

 

7.6

 

8.8

 

9.5

 

tPLZ

Propagation Delay

2.7

 

50

 

 

10.5

 

14.7

1.0

15.0

1.0

16.0

ns

 

Time

3.3(*)

 

50

 

 

9.6

 

13.5

1.0

14.0

1.0

15.0

 

 

 

 

 

 

tOSLH

Output To Output

2.7

 

50

 

 

0.5

 

1.0

 

1.5

 

1.5

 

tOSHL

Skew Time (note1,

3.3(*)

 

50

 

 

0.5

 

1.0

 

1.5

 

1.5

ns

 

2)

 

 

 

 

 

 

 

 

 

 

 

 

 

1)Skew is defined as the absolute value of the difference between the actual propagation delay for any two outputs of the same device switching in the same direction, either HIGH or LOW

2)Parameter guaranteed by design

(*) Voltage range is 3.3V ± 0.3V

Table 9: Capacitive Characteristics

 

 

Test Condition

 

 

 

 

Value

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

VCC

 

TA = 25°C

 

-40 to 85°C

-55 to 125°C

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(V)

 

Min.

Typ.

Max.

Min.

Max.

Min.

Max.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CIN

Input Capacitance

3.3

 

 

5.4

 

10

 

10

 

10

pF

COUT

Output Capacitance

3.3

 

 

7.3

 

 

 

 

 

 

pF

CPD

Power Dissipation

3.3

 

 

2.6

 

 

 

 

 

 

pF

 

Capacitance

 

 

 

 

 

 

 

 

 

(note 1)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/6 (per gate)

Figure 3: Test Circuit

CL = 15/50pF or equivalent (includes jig and probe capacitance)

RL = R1 = 1KΩ or equivalent

RT = ZOUT of pulse generator (typically 50Ω )

4/11

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