ST 74LVX05 User Manual

74LVX05

LOW VOLTAGE CMOS HEX INVERTER (OPEN DRAIN)

WITH 5V TOLERANT INPUTS

■ HIGH SPEED:

t

= 4.8ns (TYP.) at V

PD

■ 5V TOLERANT INPUTS

■ INPUT VOLTAGE LEVEL:

V

=0.8V , VIH=2V at VCC=3V

IL

■ LOW POWER DISSIPATION:

I

= 2 µA (MAX.) at TA=25°C

CC

■ LOW NOISE:

V

= 0.3V (TYP.) at VCC = 3.3V

OLP

■ OPERATING VOLTAGE RANGE:

V

(OPR) = 2V to 3.6V (1.2V Data Retention)

CC

■ PIN AND FUNCTION COMPATIBLE WITH

CC

= 3.3V

74 SERIES 05

■ IMPROVED LATCH-UP IMMUN ITY

■ POWER DOWN PROTECTION ON INPUTS

DESCRIPTION

The 74LVX05 is a low voltage CMOS OPEN
DRAIN HEX INVERTER fabricated with
sub-micron silicon gate and double-layer metal
wiring C

2

MOS technology. It is ideal for low
power, battery operated and low noise 3.3V
applications.
The internal circuit is composed of 3 stages
including buffer ou tput, whi ch provid es hig h no ise
immunity and stable output.

TSSOPSOP

Table 1: Order Codes

PACKAGE T & R

SOP 74LVX05MTR

TSSOP 74LVX05TTR

Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage.
This device can be used to interface 5V to 3V
system. It combines high speed performance with
the true CMOS low power consumption.
All inputs and outputs are equipped with
protection circuits against static disc harge, giving
them 2KV ESD immunity and transient excess
voltage.

Figure 1: Pin Connection An d I E C Logic Symbols

Rev. 5

1/11August 2004

74LVX05

Figure 2: Input Equivalent Circuit Table 2: Pin Description

PIN N° SYMBOL NAME AND FUNCTION

1, 3, 5, 9, 1 1,

13

2, 4, 6, 8, 10,

12

7 GND Ground (0V)

14

Table 3: Truth Table

Z: High Impedance

Table 4: Absolute Maximum Ratings

Symbol Parameter Value Unit

V

V

V

I

I

OK

I

or I

I

CC

T

T

Supply Voltage

CC

DC Input Voltage

I

DC Output Voltage -0.5 to VCC + 0.5

O

DC Input Diode Current

IK

DC Output Diode Current
DC Output Current

O

DC VCC or Ground Current

GND

Storage Temperature

stg

Lead Temperature (10 sec)

L

1A to 6A Data Inputs

1Y to 6Y Data Outputs

V

CC

Positive Supply Voltage

AY

LZ

HL

-0.5 to +7.0 V

-0.5 to +7.0 V

- 20 mA

± 20 mA
± 25 mA
± 50 mA

-65 to +150 °C
300 °C

V

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.

Table 5: Recommended Operating Conditions

Symbol Parameter Value Unit

V

V
V
T

dt/dv

1) Truth T abl e guarante ed: 1.2V to 3.6V

2) V

from 0.8V to 2.0V

IN

2/11

Supply Voltage (note 1)

CC

Input Voltage

I

Output Voltage 0 to V

O

Operating Temperature

op

Input Rise and Fall Time (note 2) (V

= 3.3V)

CC

2 to 3.6 V
0 to 5.5 V

CC

-55 to 125 °C
0 to 100 ns/V

V

Table 6: DC Specifications

Symbol Parameter

V

V

High Level Input

IH

Voltage

V

Low Level Input

IL

Voltage

Low Level Output

OL

Voltage

Input Leakage

I

I

Current

I

High Impedance

OZ

Output Leakage
Current

Quiescent Supply

I

CC

Current

Test Condition Value

V

(V)

CC

T

A

Min. Typ. Max. Min. Max. Min. Max.

-40 to 85°C -55 to 125°C

= 25°C

2.0 1.5 1.5 1.5

3.6 2.4 2.4 2.4

2.0 0.5 0.5 0.5

3.6 0.8 0.8 0.8
=50 µA

2.0

3.0

3.6

3.6

3.6

V

V

VO = VCC or GND

V

I

I

O

=50 µA

I

O

=4 mA

I

O

= 5V or GND

I

= VIH or V

I

IL

= VCC or GND

0.0 0.1 0.1 0.1

0.0 0.1 0.1 0.1

0.36 0.44 0.55

± 0.1 ± 1 ± 1 µA

±0.25 ± 2.5 ± 5 µA

22020µA

74LVX05

Unit

V3.0 2.0 2.0 2.0

V3.0 0.8 0.8 0.8

V3.0

Table 7: Dynamic Switching Characteristics

Test Condition Value

= 25°C

Symbol Parameter

V
V

V

Dynamic Low

OLP

Voltage Quiet

OLV

Output (note 1, 2)
Dynamic High

IHD

Voltage Input (note

V

CC

(V)

3.3

3.3 2

= 50 pF

C

L

T

A

Min. Typ. Max. Min. Max. Min. Max.

0.3 0.5

-0.5 -0.3

1, 3)

V

Dynamic Low

ILD

Voltage Input (note

3.3 0.8

1, 3)

1) Worst case package.

2) Max number of outp ut s defined as (n). Data inp ut s are driven 0V to 3.3V, (n-1) outputs switc hi ng and one out put at GND.

3) Max number of data inputs (n) switching. (n-1) switching 0V to 3.3V. Inputs under test switching: 3.3V to threshold (V
(V

), f=1MHz.

IHD

-40 to 85°C -55 to 125°C

ILD

Unit

V

), 0V to thresho l d

3/11

74LVX05

Table 8: AC Electrical Characteristics (Input tr = tf = 3ns)

Test Condition Value

= 25°C

Symbol Parameter

t

t

t

OSLH

t

OSHL

1) Skew is defined as the absolute value of the difference between the actual propagation delay for any two outputs of the same device switch­ing in the sa m e di rection, ei ther HIGH or LOW

2) Param eter guaran teed by design
(*) Voltage range is 3.3V ±

Propagation Delay

PZL

Time

Propagation Delay

PLZ

Time
Output To Output

Skew Time (note1,

2)

0.3V

V

C

CC

(V)

L

(pF)

2.7 15 5.4 7.7 9.0 10.0

2.7 50 6.0 8.7 10.0 11.5

(*)

3.3

3.3

15 4.8 7.0 8.1 9.0

(*)

50 5.3 7.6 8.8 9.5

2.7 50 10.5 14.7 1.0 15.0 1.0 16.0

(*)

3.3

50

2.7 50 0.5 1.0 1.5 1.5

(*)

3.3

50

T

A

Min. Typ. Max. Min. Max. Min. Max.

9.6 13.5 1.0 14.0 1.0 15.0

0.5 1.0 1.5 1.5

Table 9: Capacitive Characteristics

-40 to 85°C -55 to 125°C

Unit

ns

ns

ns

Test Condition Value

Symbol Parameter

C

Input Capacitance

IN

C

C

Output Capacitance

OUT

Power Dissipation

PD

Capacitance

T

V

CC

(V)

A

Min. Typ. Max. Min. Max. Min. Max.

3.3 5.4 10 10 10 pF

3.3 7.3 pF

3.3 2.6 pF

-40 to 85°C -55 to 125°C

Unit

= 25°C

(note 1)

1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I

= CPD x VCC x fIN + ICC/6 (per gate)

CC(opr)

Figure 3: Test Circuit

CL = 15/50pF or e qui valent (inc lu des jig and pro be capacitan ce)
R

= R1 = 1KΩ or equivalent

L

= Z

R

of pulse generator (typically 50Ω)

T

OUT

4/11