ST 74LVX04 User Manual

74LVX04

LOW VOLTAGE CMOS HEX INVERTER WITH 5V TOLERANT INPUTS

HIGH SPEED:

tPD = 4.1ns (TYP.) at VCC = 3.3V

5V TOLERANT INPUTS

INPUT VOLTAGE LEVEL: VIL=0.8V, VIH=2V at VCC=3V

LOW POWER DISSIPATION: ICC = 2 A (MAX.) at TA=25°C

LOW NOISE:

VOLP = 0.3V (TYP.) at VCC = 3.3V

SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 4mA (MIN)

BALANCED PROPAGATION DELAYS: tPLH tPHL

OPERATING VOLTAGE RANGE:

VCC(OPR) = 2V to 3.6V (1.2V Data Retention)

PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 04

IMPROVED LATCH-UP IMMUNITY

POWER DOWN PROTECTION ON INPUTS

DESCRIPTION

The 74LVX04 is a low voltage CMOS HEX INVERTER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. It is ideal for low power, battery operated and low noise 3.3V applications.

SOP TSSOP

Table 1: Order Codes

PACKAGE

T & R

 

 

SOP

74LVX04MTR

 

 

TSSOP

74LVX04TTR

 

 

The internal circuit is composed of 3 stages including buffer output, which provides high noise immunity and stable output.

Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage.

This device can be used to interface 5V to 3V system. It combines high speed performance with the true CMOS low power consumption.

All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage.

Figure 1: Pin Connection And IEC Logic Symbols

August 2004

Rev. 4

1/11

 

 

ST 74LVX04 User Manual

74LVX04

Figure 2: Input Equivalent Circuit

Table 2: Pin Description

 

 

PIN N°

SYMBOL

NAME AND FUNCTION

 

1, 3, 5, 9, 11,

1A to 6A

Data Inputs

 

13

 

 

 

 

2, 4, 6, 8, 10,

1Y to 6Y

Data Outputs

 

12

 

 

 

 

7

GND

Ground (0V)

 

14

VCC

Positive Supply Voltage

 

 

Table 3: Truth Table

 

 

 

 

A

 

Y

 

 

L

 

H

 

 

H

 

L

Table 4: Absolute Maximum Ratings

 

 

 

Symbol

Parameter

Value

Unit

VCC

Supply Voltage

-0.5 to +7.0

V

VI

DC Input Voltage

-0.5 to +7.0

V

VO

DC Output Voltage

-0.5 to VCC + 0.5

V

IIK

DC Input Diode Current

- 20

mA

IOK

DC Output Diode Current

±

20

mA

IO

DC Output Current

±

25

mA

ICC or IGND

DC VCC or Ground Current

±

50

mA

Tstg

Storage Temperature

-65 to +150

°C

TL

Lead Temperature (10 sec)

300

°C

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied.

Table 5: Recommended Operating Conditions

Symbol

Parameter

Value

Unit

 

 

 

 

VCC

Supply Voltage (note 1)

2 to 3.6

V

VI

Input Voltage

0 to 5.5

V

VO

Output Voltage

0 to VCC

V

Top

Operating Temperature

-55 to 125

°C

dt/dv

Input Rise and Fall Time (note 2) (VCC = 3.3V)

0 to 100

ns/V

1)Truth Table guaranteed: 1.2V to 3.6V

2)VIN from 0.8V to 2.0V

2/11

74LVX04

Table 6: DC Specifications

 

 

 

Test Condition

 

 

 

 

 

Value

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

VCC

 

 

 

TA = 25°C

 

-40 to 85°C

-55 to 125°C

Unit

 

 

(V)

 

 

Min.

Typ.

Max.

Min.

Max.

Min.

Max.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VIH

High Level Input

2.0

 

 

1.5

 

 

 

 

1.5

 

1.5

 

 

 

Voltage

3.0

 

 

2.0

 

 

 

 

2.0

 

2.0

 

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3.6

 

 

2.4

 

 

 

 

2.4

 

2.4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VIL

Low Level Input

2.0

 

 

 

 

 

 

0.5

 

0.5

 

0.5

 

 

Voltage

3.0

 

 

 

 

 

 

0.8

 

0.8

 

0.8

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3.6

 

 

 

 

 

 

0.8

 

0.8

 

0.8

 

VOH

High Level Output

2.0

 

IO=-50 A

1.9

 

2.0

 

 

1.9

 

1.9

 

 

 

Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3.0

 

IO=-50 A

2.9

 

3.0

 

 

2.9

 

2.9

 

V

 

 

 

 

 

 

 

 

 

 

3.0

 

IO=-4 mA

2.58

 

 

 

 

2.48

 

2.4

 

 

VOL

Low Level Output

2.0

 

IO=50 A

 

 

0.0

 

0.1

 

0.1

 

0.1

 

 

Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3.0

 

IO=50 A

 

 

0.0

 

0.1

 

0.1

 

0.1

V

 

 

 

 

 

 

 

 

 

 

3.0

 

IO=4 mA

 

 

 

0.36

 

0.44

 

0.55

 

II

Input Leakage

3.6

 

VI = 5V or GND

 

 

 

±

0.1

 

± 1

 

± 1

A

 

Current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ICC

Quiescent Supply

3.6

 

VI = VCC or GND

 

 

 

 

2

 

20

 

20

A

 

Current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Table 7: Dynamic Switching Characteristics

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Test Condition

 

 

 

 

 

Value

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

VCC

 

 

 

TA = 25°C

 

-40 to 85°C

-55 to 125°C

Unit

 

 

(V)

 

 

Min.

Typ.

Max.

Min.

Max.

Min.

Max.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VOLP

Dynamic Low

 

 

 

 

 

0.3

 

0.5

 

 

 

 

 

 

Voltage Quiet

3.3

 

 

 

 

 

 

 

 

 

 

 

 

VOLV

 

 

-0.5

 

-0.3

 

 

 

 

 

 

 

Output (note 1, 2)

 

 

 

 

 

 

 

 

 

 

 

VIHD

Dynamic High

3.3

 

CL = 50 pF

2

 

 

 

 

 

 

 

 

V

 

Voltage Input (note

 

 

 

 

 

 

 

 

 

 

 

 

1, 3)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VILD

Dynamic Low

3.3

 

 

 

 

 

 

0.8

 

 

 

 

 

 

Voltage Input (note

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1, 3)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1)Worst case package.

2)Max number of outputs defined as (n). Data inputs are driven 0V to 3.3V, (n-1) outputs switching and one output at GND.

3)Max number of data inputs (n) switching. (n-1) switching 0V to 3.3V. Inputs under test switching: 3.3V to threshold (VILD), 0V to threshold (VIHD), f=1MHz.

3/11

74LVX04

Table 8: AC Electrical Characteristics (Input tr = tf = 3ns)

 

 

 

Test Condition

 

 

 

 

Value

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

VCC

 

CL

 

TA = 25°C

 

-40 to 85°C

-55 to 125°C

Unit

 

 

(V)

 

(pF)

 

Min.

Typ.

Max.

Min.

Max.

Min.

Max.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tPLH tPHL

Propagation Delay

2.7

 

15

 

 

5.4

 

10.1

1.0

12.5

1.0

14.5

 

 

Time

2.7

 

50

 

 

7.9

 

13.6

1.0

16.0

1.0

18.0

ns

 

 

 

 

 

 

 

 

3.3(*)

 

15

 

 

4.1

 

6.2

1.0

7.5

1.0

8.5

 

 

 

 

 

 

 

 

 

3.3(*)

 

50

 

 

6.6

 

9.7

1.0

11.0

1.0

12.0

 

tOSLH

Output To Output

2.7

 

50

 

 

0.5

 

1.0

 

1.5

 

1.5

 

tOSHL

Skew Time (note1,

3.3(*)

 

50

 

 

0.5

 

1.0

 

1.5

 

1.5

ns

2)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1)Skew is defined as the absolute value of the difference between the actual propagation delay for any two outputs of the same device switching in the same direction, either HIGH or LOW

2)Parameter guaranteed by design

(*) Voltage range is 3.3V ± 0.3V

Table 9: Capacitive Characteristics

 

 

Test Condition

 

 

 

 

Value

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

VCC

 

TA = 25°C

 

-40 to 85°C

-55 to 125°C

Unit

 

 

(V)

 

Min.

Typ.

Max.

Min.

Max.

Min.

Max.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CIN

Input Capacitance

3.3

 

 

4

 

10

 

10

 

10

pF

CPD

Power Dissipation

3.3

 

 

18

 

 

 

 

 

 

pF

 

Capacitance

 

 

 

 

 

 

 

 

 

(note 1)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/6 (per gate)

Figure 3: Test Circuit

CL =15/50pF or equivalent (includes jig and probe capacitance)

RT = ZOUT of pulse generator (typically 50Ω )

4/11

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