The 74LCX05 is a low voltage CMOS OPEN
DRAIN HEX INVERTER fabricated with
sub-micron silicon gate and double-layer metal
wiring C
2
MOS technology. It is ideal for low power
and high speed 3.3V applications. It can be
interfaced to 5V signal environment for inputs.
TSSOPSOP
Table 1: Order Codes
PACKAGET & R
SOP74LCX05MTR
TSSOP74LCX05TTR
The internal circuit is composed of 3 stages
including buffer ou tput, whi ch provid es hig h no ise
immunity and stable output.
It has same speed performance at 3.3V than 5V
AC/ACT family, combined with a lower power
consumption.
All inputs and outputs are equipped with
protection circuits against static disc harge, giving
them 2KV ESD immunity and transient excess
voltage.
Figure 1: Pin C onnection And I EC Logic Symbol s
Rev. 3
1/11September 2004
74LCX05
Figure 2: Input An d Output Equival e n t Ci rcui t
Table 2: Pin Description Table 3: Truth Table
PIN N°SYMBOLNAME AND FUNCTION
1, 3, 5, 9, 1 1,
13
2, 4, 6, 8, 10,
12
1A to 6AData Inputs
1Y to 6YData Outputs
Z : High Impedance
AY
LZ
HL
7GNDGround (0V)
14
V
CC
Positive Supply Voltage
Table 4: Absolute Maximum Ratings
SymbolParameterValueUnit
V
V
V
V
I
I
OK
I
I
CC
I
GND
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
absolute maximum rating must be observed
1) I
O
2) VO < GND
Supply Voltage
CC
DC Input Voltage
I
DC Output Voltage (VCC = 0V)
O
DC Output Voltage (High or Low State) (note 1)-0.5 to VCC + 0.5
O
DC Input Diode Current
IK
DC Output Diode Current (note 2)
DC Output Current
O
DC Supply Current per Supply Pin
DC Ground Current per Supply Pin
Storage Temperature
stg
Lead Temperature (10 sec)
L
-0.5 to +7.0V
-0.5 to +7.0V
-0.5 to +7.0V
V
- 50mA
- 50mA
± 50mA
± 100mA
± 100mA
-65 to +150°C
300°C
2/11
74LCX05
Table 5: Recommended Operating Conditions
SymbolParameterValueUnit
V
V
V
V
I
OH
I
OH
T
dt/dvInput Rise and Fall Time (note 2)0 to 10ns/V
1) Truth T abl e guarante ed: 1.5V to 3.6V
2) V
from 0.8V to 2V at VCC = 3.0V
IN
Table 6: DC Specifications
Supply Voltage (note 1)
CC
Input Voltage
I
Output Voltage (VCC = 0V)
O
Output Voltage (High or Low State)0 to V
O
, I
High or Low Level Output Current (VCC = 3.0 to 3.6V)
OL
, I
High or Low Level Output Current (VCC = 2.7V)
OL
Operating Temperature
op
Test ConditionValue
2.0 to 3.6V
0 to 5.5V
0 to 5.5V
CC
± 24mA
± 12mA
-55 to 125°C
V
SymbolParameter
V
CC
(V)
V
V
V
I
I
OZ
I
CC
∆I
High Level Input
IH
Voltage
Low Level Input
IL
Voltage
Low Level Output
OL
Voltage
Input Leakage
I
I
Current
Power Off Leakage
off
Current
High Impedance
Output Leakage
Current
Quiescent Supply
Current
ICC incr. per Input
CC
2.7 to 3.6
2.7 to 3.6
2.7
3.0
2.7 to 3.6
0
2.7 to 3.6
2.7 to 3.6
2.7 to 3.6
IO=100 µA
I
O
I
O
I
O
V
= 0 to 5.5V
I
or VO = 5.5V
V
I
= VIH or V
V
I
VO = 0 to V
VI = VCC or GND
V
or VO= 3.6 to 5.5V
I
VIH = VCC - 0.6V
Table 7: Dynamic Switching Characteristics
-40 to 85 °C-55 to 125 °C
Min.Max.Min.Max.
2.02.0V
0.80.8V
0.20.2
=12 mA
=16 mA
=24 mA
0.40.4
0.40.4
0.550.55
± 5± 5µA
1010µA
IL
CC
± 5± 5µA
1010
± 10± 10
500500µA
Test ConditionValue
Unit
V
µA
= 25 °C
SymbolParameter
V
CC
(V)
V
OLP
V
OLV
1) Number of outputs defined as "n". Measured wi t h "n-1" output s switching from HIGH to LO W or LOW to HIGH. The remaining output is
measur ed i n the LOW state.
Dynamic Low Level Quiet
Output (note 1)
3.3
V
V
IH
= 0V
IL
= 3.3V
T
A
Min.Typ.Max.
0.8
-0.8
Unit
V
3/11
74LCX05
Table 8: AC Electrical Characteristics
Test ConditionValue
SymbolParameter
V
CC
(V)
t
PLZ
t
PZL
t
OSLH
t
OSHL
1) Skew is defined as the absolute value of the difference between the actual propagation delay for any two outputs of the same device switching in the sa me directio n, either HIGH or LOW (t
2) Param eter guaran teed by design
Propagation Delay
Time
Propagation Delay
Time
Output To Output
Skew Time (note1,
2)
2.7
3.0 to 3.61.05.21.05.2
2.7
3.0 to 3.61.05.21.05.2
3.0 to 3.6505002.51.01.0ns
OSLH
C
L
(pF)
505002.5
505002.5
= | t
PLHm
- t
R
(Ω)
PLHn
|, t
L
OSHL
t
s
(ns)
= t
= | t
-40 to 85 °C-55 to 125 °C
r
Min.Max.Min.Max.
6.56.5
6.56.5
- t
PHLn
|)
PHLm
Unit
ns
ns
Table 9: Capacitive Characteristics
Test ConditionValue
= 25 °C
SymbolParameter
V
CC
(V)
C
C
OUT
C
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
Input Capacitance
IN
Output Capacitance
Power Dissipation Capacitance
PD
(note 1)
3.3
3.3
VIN = 0 to V
VIN = 0 to V
3.3fIN = 10MHz
V
= 0 or V
IN
CC
CC
CC
T
A
Min.Typ.Max.
6pF
14pF
5
= CPD x VCC x fIN + ICC/6 (per gate)
CC(opr)
Unit
pF
Figure 3: Test Circuit
TESTSWITCH
, t
t
PLH
PHL
, t
t
PZL
PLZ
, t
t
PZH
PHZ
CL = 50 pF or equivalent (includes jig and probe capacitance)
RL = R1 = 500Ω or equivalent
= Z
R
of pulse generator (typically 50Ω)
T
OUT
4/11
Open
6V
GND
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