ST 74AUP1G32 User Manual

74AUP1G32

Low power single 2-input OR gate

Features

■High speed: tPD = 5.8 ns (max.) at VCC = 2.3 V

■Power down protection on inputs and outputs

■Balanced propagation delays: tPLH ≈ tPHL

■Operating voltage range: VCC (opr) = 1.2 to 3.6 V

■Low power dissipation:

ICC = 1 µA (max.) at TA = 85 °C

■Latch-up performance exceeds 300 mA (JESD 78, Class II)

■ESD performance:

–2000-V human body model (A114-A)

–200-V machine model (A115-A)

–1000-V charged device model (C101)

DFN6L

SOT-665

Applications

■Mobile phones

■Personal digital assistants (PDAs)

Table 1. Device summary

Description

The 74AUP1G32 is a low voltage CMOS single 2-input OR gate fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. It is ideal for 1.2 to 3.6 V operations and low power and low noise applications.

All inputs and outputs are equipped with protection circuits against static discharge, giving them 2 kV ESD immunity and transient excess voltage.

Order code	Package		Packing
74AUP1G32DTR	DFN6L (1.2 x 1 mm)		Tape and reel
74AUP1G32GTR	SOT-665	(1.6 x 1.6 mm)	Tape and reel
May 2009	Doc ID	15648 Rev 1	1/18
			www.st.com

Pin settings	74AUP1G32

1 Pin settings

1.1Pin connection

Figure 1. Pin connection (top through view)

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1.2Pin description

Table 2.	Pin assignment
DFN pin		SOT pin		Symbol	Name and function
number		number
1		1		A	Data input
2		2		B	Data input
3		3		GND	Ground (0V)
4		4		Y	Data output
5		-		NC	Not connected
6		5		VCC	Positive supply voltage

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74AUP1G32	Pin settings

1.3Truth table

Figure 2. Truth table

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Table 3.	Truth table
	A	B	Y
	L	L	L
	H	X	H
	X	H	H

Figure 3. Input and output equivalent circuit

			VCC
			Overvoltage
			control
Input				Output
ESD			ESD
protection			protection
GND	GND	GND	GND	GND
				CS08974

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Maximum rating	74AUP1G32

2 Maximum rating

Stressing the device above the rating listed in the “absolute maximum ratings” table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Table 4.	Absolute maximum ratings
Symbol	Parameter	Value	Unit
VCC	Supply voltage	-0.5 to +4.6	V
VI	DC input voltage	-0.5 to +4.6	V
VO	DC output voltage (VCC = 0 V)	-0.5 to +4.6	V
VO	DC output voltage (high or low state)	-0.5 to VCC + 0.5	V
IIK	DC input diode current	-20	mA
IOK	DC output diode current	-50	mA
IO	DC output current	±50	mA
ICC	DC supply current per supply pin	±100	mA
IGND	DC ground current per supply pin	±100	mA
PD	Power dissipation	200	mW
Tstg	Storage temperature	-65 to +150	°C
TL	Lead temperature (10 sec)	260	°C

2.1Recommended operating conditions

Table 5.	Recommended operating conditions
Symbol	Parameter		Value	Unit
VCC	Supply voltage		1.2 to 3.6	V
VI	Input voltage		0 to VCC	V
VO	Output voltage		0 to VCC	V
Top	Operating temperature		-40 to 85	°C
		VCC = 3.0 to 3.6 V	10	ns/V
dt/dv	Input rise and fall time	VCC = 2.3 to 2.7 V	20	ns/V
		VCC = 1.2 to 1.95 V	100	ns/V

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74AUP1G32	Electrical characteristics

3 Electrical characteristics

Table 6.	DC specifications
					Value			Value
		VCC
Symbol	Parameter		Test condition		25 °C			-40 to 85 °C		Unit
		(V)
				Min			Max	Min	Max
	High level input	1.2 to 1.95		0.65 VCC			–	0.65 VCC	–
VIH		2.0 to 2.7		1.6			–	1.6	–	V
	voltage
		2.75 to 3.6		2.0			–	2.0	–
	Low level input	1.2 to 1.95		–		0.35 VCC		–	0.35VCC
VIL		2.0 to 2.7		–			0.7	–	0.7	V
	voltage
		2.75 to 3.6		–			0.8	–	0.8
		1.2 to 3.6	IOH = -100 µA	VCC –			–	VCC –	–
				0.2				0.2
		3.0	IOH = -10 mA	2.45			–	2.4	–
VOH	High level	2.3	IOH = -6 mA	1.85			–	1.8	–	V
	output voltage
		1.65	IOH = -4 mA	1.30			–	1.25	–
		1.4	IOH = -2 mA	1.10			–	1.05	–
		1.2	IOH = -1 mA	1.00			–	0.95	–
		1.2 to 3.6	IO = 100 µA	–			0.15	–	0.20
		3.0	IO = 10 mA	–			0.50	–	0.55
VOL	Low level	2.3	IO = 6 mA	–			0.35	–	0.40	V
	output voltage	1.65	IO = 4 mA	–			0.35	–	0.40
		1.4	IO = 2 mA	–			0.25	–	0.30
		1.2	IO = 1 mA	–			0.20	–	0.25
II	Input leakage	0 to 3.6	VI = GND to 3.6	–			±0.1	–	±0.5	µA
	current
Ioff	Power off	0	VI or VO = 0 to	–			±0.1	–	±1.0	µA
	leakage current		3.6 V
ICC	Quiescent	1.2 to 3.6	VI = VCC or GND	–			0.1	–	1	µA
	supply current
ICC	ICC increment	3.3	VI = VCC - 0.6V,	–			80	–	100	µA
	per input		IO = 0

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Electrical characteristics								74AUP1G32
Table 7.	AC electrical characteristics
				Test		Value
				condition
		VCC
Symbol	Parameter								Unit
					25 °C	-40 to 85 °C
		(V)		CL (pF)
					Typ	Min	Max
		1.1 to	1.3		8.0	–	12.4
		1.4 to	1.6		4.1	–	6.5
		1.65 to	1.95	5	3.1	–	5.0
		2.3 to	2.7		1.9	–	2.6
		3.0 to	3.6		1.4	–	1.9
		1.1 to	1.3		7.8	–	11.8
		1.4 to	1.6		5.2	–	7.9
		1.65 to	1.95	10	4.1	–	6.2
		2.3 to	2.7		3.0	–	4.4
tPLH, tPHL	Propagation	3.0 to	3.6		2.5	–	3.6		ns
	delay time	1.1 to	1.3		8.6	–	12.6
		1.4 to	1.6		5.9	–	7.9
				15
		1.65 to	1.95		4.7	–	7.1
		2.3 to	2.7		3.6	–	5.1
		3.0 to	3.6		3.1	–	4.4
		1.1 to	1.3		10.3	–	15.7
		1.4 to 1.6			6.6	–	10.8
		1.65 to	1.95	30	5.3	–	8.3
		2.3 to	2.7		4.2	–	5.8
		3.0 to	3.6		3.7	–	5.2

Table 8.	Capacitive characteristics
						Value
			VCC	Test
Symbol	Parameter					TA = 25 °C		Unit
			(V)	condition
					Min	Typ	Max
CI	Input capacitance		0	VI = 0 or VCC	–	5	–	pF
			3.6	VI = 0 or VCC	–	5	–
CO	Output capacitance		3.6	VI = 0 or VCC	–	7	–	pF
CPD	Power dissipation capacitance		3.6	f = 10 MHz	–	8	–	pF

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