ST 2N5551HR User Manual

2N5551HR

Hi-Rel NPN bipolar transistor 160 V - 0.5 A

Features

BV

CEO

(max) 0.5 A

I

C

H

at 5 V - 10 mA > 80

FE

160 V

Operating temperature range -65°C to +200°C

■ Linear gain characteristics

■ ESCC qualified

■ European preferred part list - EPPL

■ 100 krad low dose rate

■ Hermetic packages

Description

The 2N5551HR is a silicon planar epitaxial NPN transistor in TO-18, TO-39 and LCC-3 packages. It is specifically designed for aerospace Hi-Rel applications and ESCC qualified according to the 5201-019 specification. In case of conflict between this datasheet and ESCC detailed specification, the latter prevails.

3

1

2

3

2

TO-18 LCC-3

TO-39

Figure 1. Internal schematic diagram

1

Rad. level

Packages Lead Finish

Mass

(g)

EPPL

Table 1. Device summary

Order codes

ESCC Part

number

Qual. Level

2N5551UB1 - Eng. Model LCC-3UB Gold 0.06 -

(1)

2N5551UB 5201/019/08 or 09 ESCC Flight LCC-3UB Gold / Solder Dip

0.06 -

SOC5551 - Eng. Model LCC-3 Gold 0.06 -

SOC5551HRB 5201/019/04 or 05 ESCC Flight LCC-3 Gold / Solder Dip

(1)

0.06 Y

SOC5551SW 5201/019/05 ESCC Flight 100 krad LCC-3 Solder Dip 0.06 Y

2N5551/T1 - Eng. Model TO-18 Gold 0.40 -

(1)

0.40 -

1.20 -

2N5551HR 5201/019/01 or 02 ESCC Flight TO-18 Gold / Solder Dip

2N5551SHR 5201/019/06 or 07 ESCC Flight TO-39 Gold / Solder Dip

1. Depending ESCC part number mentioned on the purchase order.

July 2010 Doc ID 16935 Rev 3 1/10

www.st.com

10

Electrical ratings 2N5551HR

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

V

Collector-base voltage (IE = 0) 180 V

CBO

Collector-emitter voltage (IB = 0) 160 V

CEO

Emitter-base voltage (IC = 0) 6 V

EBO

Collector current

I

for 2N5551HR

C

for SOC5551HRB

Total dissipation at T

amb

≤ 25 °C

for 2N5551HR

P

for SOC5551HRB

TOT

for SOC5551HRB

(1)

0.6

0.5

0.36

0.58 Total dissipation at Tc ≤ 25 °C for 2N5551HR

T

1. When mounted on a 8 x 10 x 0.6 mm ceramic substrate.

Storage temperature -65 to 200 °C

STG

T

Max. operating junction temperature 200 °C

J

1.2

Table 3. Thermal data for through-hole package

Symbol Parameter Value Unit

R

Thermal resistance junction-case __ max 146 °C/W

thJC

Thermal resistance junction-ambient __ max 486 °C/W

thJA

A A

W W W

W

Table 4. Thermal data for SMD package

Symbol Parameter Value Unit

R

1. When mounted on a 8 x 10 x 0.6 mm ceramic substrate.

2/10 Doc ID 16935 Rev 3

Thermal resistance junction-ambient __ max 486 °C/W

thJA

Thermal resistance junction-ambient

(1)

__ max

302 °C/W

2N5551HR Electrical characteristics

2 Electrical characteristics

T

= 25 °C unless otherwise specified.

case

Table 5. Electrical characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

CBO

I

EBO

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

V

CE(sat)

V

BE(sat)

h

FE

Collector-base cut-off current (I

= 0)

E

Emitter-base cut-off current (IC = 0)

= 120 V

V

CB

V

= 120 V TC = 150 °C

CB

= 4 V - 50 nA

V

EB

50

nA µA

Collector-base breakdown voltage

= 0)

(I

E

= 100 µA 180 - V

I

C

Collector-emitter

(1)

breakdown voltage

= 0)

(I

B

= 1 mA 160 - V

I

C

Emitter-base breakdown voltage

= 0)

(I

C

Collector-emitter

(1)

saturation voltage

Base-emitter

(1)

saturation voltage

(1)

DC current gain

h

fe

Small signal current gain

= 10 µA 6 - V

I

E

= 10 mA IB = 1 mA

I

C

IC = 50 mA IB = 5 mA

= 10 mA IB = 1 mA

I

C

IC = 50 mA IB = 5 mA

I

= 1 mA V

C

IC = 10 mA V

= 50 mA V

I

C

= 10 mA V

I

C

= - 55 °C

T

amb

= 10 V IC = 1 mA

V

CE

= 5 V = 5 V = 5 V = 5 V

f = 1 kHz

80 80 30 20

50 - 200

0.15

-

0.2

-

1 1

250

-

V V

h

fe

C

obo

C

ebo

1. Pulsed duration = 300 µs, duty cycle ≤ 1.5%

Small signal current gain

Output capacitance (IE = 0)

Emitter-base capacitance (IC = 0)

V

CE

f > 100 MHz

V

CB

V

EB

Doc ID 16935 Rev 3 3/10

= 10 V IC = 10 mA

1-

= 10 V f = 1 MHz - 6 pF

= 5 V f = 1 MHz - 20 pF