ST 2N5401HR User Manual

Hi-Rel PNP bipolar transistor 150 V - 0.5 A

Features

BV

CEO

IC (max) 0.5 A

H

at 10 V - 150 mA > 60

FE

Operating temperature range -65°C to +200°C

150 V

2N5401HR

3

1

2

3

TO-18 LCC-3

3

1

2

■ Hi-Rel PNP bipolar transistor

■ Linear gain characteristics

■ ESCC qualified

■ European preferred part list - EPPL

■ 100 krad low dose rate

■ Radiation level: lot specific total dose contact

Figure 1. Internal schematic diagram

4

1

2

LCC-3UB

marketing for specified level

Description

The 2N5401HR is a silicon planar epitaxial PNP transistor in TO-18 and LCC-3 packages. It is specifically designed for aerospace Hi-Rel applications and ESCC qualified according to the 5202-014 specification. In case of conflict between this datasheet and ESCC detailed specification, the latter prevails.

Table 1. Device summary

Order codes ESCC Part num. Quality Level Rad level Packages Lead Finish Mass (g) EPPL

2N5401UB1 - Eng. Model LCC-3UB Gold 0.06 -

SOC5401SW 5202/014/07 ESCC Flight 100 krad LCC-3 Solder Dip 0.06 Y

2N5401UB06 5202/014/06 ESCC Flight LCC-3UB Gold 0.06 -

2N5401UB07 5202/014/07 ESCC Flight LCC-3UB Solder Dip 0.06 -

SOC5401 - Eng. Model LCC-3 Gold 0.06 -

SOC5401HRB 5202/014/04 or 05 ESCC Flight LCC-3 Gold/Solder Dip

(1)

0.06 Y

2N5401/T1 - Eng. Model TO-18 Gold 0.40 -

2N5401HR 5202/014/01 or 02 ESCC Flight TO-18 Gold/Solder Dip

1. Depending ESCC part number mentioned on the purchase order.

(1)

0.40 -

July 2010 Doc ID 16934 Rev 2 1/10

www.st.com

10

Electrical ratings 2N5401HR

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

V

Collector-base voltage (IE = 0) -160 V

CBO

Collector-emitter voltage (IB = 0) -150 V

CEO

Emitter-base voltage (IC = 0) -5 V

EBO

Collector current

I

for 2N5401HR

C

for SOC5401HRB

Total dissipation at T

amb

≤ 25 °C

for 2N5401HR

P

for SOC5401HRB

TOT

for SOC5401HRB

(1)

-0.6

-0.5

0.36

0.58 Total dissipation at Tc ≤ 25 °C for 2N5401HR

T

1. When mounted on a 8x10x0.6 mm ceramic substrate.

Storage temperature -65 to 200 °C

STG

T

Max. operating junction temperature 200 °C

J

1.2

Table 3. Thermal data for through-hole package

Symbol Parameter Value Unit

R R

Thermal resistance junction-case __ max

thJC

Thermal resistance junction-ambient __ max

thJA

146 486

°C/W °C/W

A A

W W W

W

Table 4. Thermal data for SMD package

Symbol Parameter Value Unit

R

1. When mounted on a 8x10x0.6 mm ceramic substrate.

2/10 Doc ID 16934 Rev 2

Thermal resistance junction-ambient __ max

thJA

Thermal resistance junction-ambient

(1)

__ max

486 302

°C/W °C/W

2N5401HR Electrical characteristics

2 Electrical characteristics

T

= 25 °C unless otherwise specified.

case

Table 5. Electrical characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

CBO

I

EBO

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

V

CE(sat)

V

BE(sat)

h

FE

Collector-base cut-off current (I

= 0)

E

Emitter-base cut-off current (I

= 0)

C

= -120 V

V

CB

V

= -120 V TC = 150 °C

CB

= -3 V -50 nA

V

EB

-50

-50nAµA

Collector-base breakdown voltage

= 0)

(I

E

= -100 µA -160 V

I

C

Collector-emitter

(1)

breakdown voltage (I

= 0)

B

= -1 mA -150 V

I

C

Emitter-base breakdown voltage

= 0)

(I

C

Collector-emitter

(1)

saturation voltage

Base-emitter

(1)

saturation voltage

(1)

DC current gain

h

fe

Small signal current gain

= -10 µA -5 V

I

E

= -10 mA IB = -1 mA

I

C

IC = -50 mA IB = -5 mA

= -10 mA IB = -1 mA

I

C

IC = -50 mA IB = -5 mA

= -1 mA V

I

C

IC = -10 mA V I

= -50 mA V

C

IC = -10 mA V T

= -55 °C

amb

= -10 V IC = -10 mA

V

CE

= -5 V = -5 V = -5 V = -5 V

f = 10 kHz

50 60 60 20

5

-0.2

-0.5

-1

240

V V

C

obo

1. Pulsed duration = 300 µs, duty cycle ≤ 2 %

Output capacitance (I

= 0)

E

V

Doc ID 16934 Rev 2 3/10

= -10 V f = 1 MHz 6 pF

CB