ST 2N5154HR User Manual

				2N5154HR
			Hi-Rel NPN bipolar transistor 80 V - 5 A
Features
	BVCEO	80 V		2 3 1
	IC (max)	5 A
	HFE at 10 V - 150 mA	> 70	TO-39	TO-257
Operating temperature range		- 65 °C to + 200 °C		2
				1
■ Hi-Rel NPN bipolar transistor				3
■	Linear gain characteristics			SMD.5
■	ESCC qualified

■ European preferred part list - EPPL

Figure 1. Internal schematic diagram

■Radiation level: lot specific total dose contact marketing for specified level

Description

The 2N5154HR is a silicon planar epitaxial NPN transistor in TO-39, TO-257 and SMD.5 packages. It is specifically designed for aerospace Hi-Rel applications and ESCC qualified according to the 5203-010 specification. In case of conflict between this datasheet and ESCC detailed specification, the latter prevails.

Table 1.	Device summary
Order codes		Packages	Lead finish	Marking	Type	EPPL	Packaging
2N5154HR		TO-39	Gold	520301001	ESCC Flight		Strip pack
			Solder Dip	520301002
2N5154SHR		SMD.5	Gold	520301006	ESCC Flight	Yes	Strip pack
2N5154ESYHRB		TO-257	Gold	520301004	ESCC Flight		Strip pack
			Solder Dip	520301005
2N5154T1		TO-39	Gold	2N5154T1	Engineering		Strip pack
					model
2N5154S1		SMD.5	Gold	2N5154S1	Engineering		Strip pack
					model
2N5154ESY		TO-257	Gold	2N5154ESY	Engineering		Strip pack
					model
July 2011			Doc ID 15387 Rev 3				1/10
							www.st.com

Electrical ratings	2N5154HR

1 Electrical ratings

Table 2.	Absolute maximum ratings
Symbol	Parameter	Value	Unit
VCBO	Collector-base voltage (IE = 0)	100	V
VCEO	Collector-emitter voltage (IB = 0)	80	V
VEBO	Emitter-base voltage (IC = 0)	6	V
IC	Collector current	5	A
	Total dissipation at Tamb ≤25 °C
	for 2N5154HR	1	W
	for 2N5154ESYHRB	3.3	W
PTOT	for 2N5154SHR	3.3	W
	TC ≤25 °C
	for 2N5154HR	8.75	W
	for 2N5154ESYHRB	35	W
	for 2N5154SHR	35	W
TSTG	Storage temperature	- 65 to 200	°C
TJ	Max. operating junction temperature	200	°C

	Table 3.	Thermal data for through-hole packages
	Symbol	Parameter		TO-39	TO-257	Unit
	RthJC	Thermal resistance junction-case	max	20	5	°C/W
	RthJA	Thermal resistance junction-ambient	max	175	53

Table 4.	Thermal data for SMD package
Symbol	Parameter		SMD.5	Unit
RthJC	Thermal resistance junction-case	max	5	°C/W

2/10	Doc ID 15387 Rev 3

2N5154HR	Electrical characteristics

2 Electrical characteristics

Tcase = 25 °C unless otherwise specified
Table 5.	Electrical characteristics
Symbol	Parameter			Test conditions		Min.	Typ.	Max.	Unit
ICES	Collector cut-off	VCB = 60 V						1	µA
	current (IE = 0)	V	CB	= 60 V	T = 150 °C			10	µA
					amb
IEBO	Emitter cut-off current	VEB = 5 V						1	µA
	(IC = 0)	VEB = 6 V						1	mA
ICEO	Collector cut-off	VCE = 40 V						50	µA
	current (IB = 0)
V(BR)CEO (1)	Collector-emitter
	breakdown voltage	IC = 100 mA				80			V
	(IB = 0)
(1)	Collector-emitter	IC = 5 A			IB = 0.5 A			1.5	V
VCE(sat)	saturation voltage	IC = 2.5 A			IB = 250 mA			1.45	V
(1)	Base-emitter	IC = 2.5 A			IB = 0.25 A			1.45	V
VBE(sat)	saturation voltage	IC = 5 A			IB = 0.5 A			2.2	V
		IC = 50 mA			VCE = 5 V	50
(1)		IC = 2.5 A			VCE = 5 V	70		200
	DC current gain	IC = 5 A			VCE = 5 V	40
hFE
		IC = 2.5 A			VCE = 5 V
		Tamb = - 55 °C				35
hfe	AC forward current	VCE = 5 V			IC = 500 mA	3.5
	transfer ratio	f = 20 MHz
COBO	Output capacitance	IE = 0			VCB = 10 V			250	pF
		f = 1 MHz
		VCC		= 30 V	VBB = 4 V
ton	Turn-on time	Vin 51 V			IC = 5 A			0.5	µs
		IB1 = - IB2 = 0.5 A
		VCC		= 30 V	VBB = 4 V
toff	Turn-off time	Vin 51 V			IC = 5 A			1.3	µs
		IB1 = - IB2 = 0.5 A
1. Pulsed duration = 300 µs, duty cycle ≤ 2%

Doc ID 15387 Rev 3

3/10