|
|
|
|
2N5154HR |
|
|
|
Hi-Rel NPN bipolar transistor 80 V - 5 A |
|
Features |
|
|
|
|
|
BVCEO |
80 V |
|
2 3 1 |
|
IC (max) |
5 A |
|
|
|
HFE at 10 V - 150 mA |
> 70 |
TO-39 |
TO-257 |
Operating temperature range |
- 65 °C to + 200 °C |
2 |
||
|
|
|
|
|
|
|
|
|
1 |
■ Hi-Rel NPN bipolar transistor |
|
3 |
||
|
|
|||
■ |
Linear gain characteristics |
|
|
SMD.5 |
■ |
ESCC qualified |
|
|
|
■ European preferred part list - EPPL |
Figure 1. Internal schematic diagram |
■Radiation level: lot specific total dose contact marketing for specified level
Description
The 2N5154HR is a silicon planar epitaxial NPN transistor in TO-39, TO-257 and SMD.5 packages. It is specifically designed for aerospace Hi-Rel applications and ESCC qualified according to the 5203-010 specification. In case of conflict between this datasheet and ESCC detailed specification, the latter prevails.
Table 1. |
Device summary |
|
|
|
|
|
|
Order codes |
Packages |
Lead finish |
Marking |
Type |
EPPL |
Packaging |
|
|
|
|
|
|
|
|
|
2N5154HR |
TO-39 |
Gold |
520301001 |
ESCC Flight |
|
Strip pack |
|
Solder Dip |
520301002 |
|
|||||
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
2N5154SHR |
SMD.5 |
Gold |
520301006 |
ESCC Flight |
Yes |
Strip pack |
|
|
|
|
|
|
|
|
|
2N5154ESYHRB |
TO-257 |
Gold |
520301004 |
ESCC Flight |
|
Strip pack |
|
Solder Dip |
520301005 |
|
|||||
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
2N5154T1 |
TO-39 |
Gold |
2N5154T1 |
Engineering |
|
Strip pack |
|
model |
|
||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
2N5154S1 |
SMD.5 |
Gold |
2N5154S1 |
Engineering |
|
Strip pack |
|
model |
|
||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
2N5154ESY |
TO-257 |
Gold |
2N5154ESY |
Engineering |
|
Strip pack |
|
model |
|
||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
July 2011 |
|
|
Doc ID 15387 Rev 3 |
|
|
1/10 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
www.st.com |
Electrical ratings |
2N5154HR |
|
|
Table 2. |
Absolute maximum ratings |
|
|
Symbol |
Parameter |
Value |
Unit |
|
|
|
|
VCBO |
Collector-base voltage (IE = 0) |
100 |
V |
VCEO |
Collector-emitter voltage (IB = 0) |
80 |
V |
VEBO |
Emitter-base voltage (IC = 0) |
6 |
V |
IC |
Collector current |
5 |
A |
|
Total dissipation at Tamb ≤25 °C |
|
|
|
for 2N5154HR |
1 |
W |
|
for 2N5154ESYHRB |
3.3 |
W |
PTOT |
for 2N5154SHR |
3.3 |
W |
TC ≤25 °C |
|
|
|
|
|
|
|
|
for 2N5154HR |
8.75 |
W |
|
for 2N5154ESYHRB |
35 |
W |
|
for 2N5154SHR |
35 |
W |
|
|
|
|
TSTG |
Storage temperature |
- 65 to 200 |
°C |
TJ |
Max. operating junction temperature |
200 |
°C |
Table 3. |
Thermal data for through-hole packages |
|
|
|
||
Symbol |
Parameter |
|
TO-39 |
TO-257 |
Unit |
|
|
|
|
|
|
|
|
RthJC |
Thermal resistance junction-case |
max |
20 |
5 |
°C/W |
|
RthJA |
Thermal resistance junction-ambient |
max |
175 |
53 |
||
|
Table 4. |
Thermal data for SMD package |
|
|
|
Symbol |
Parameter |
|
SMD.5 |
Unit |
|
|
|
|
|
RthJC |
Thermal resistance junction-case |
max |
5 |
°C/W |
2/10 |
Doc ID 15387 Rev 3 |
2N5154HR |
Electrical characteristics |
|
|
Tcase = 25 °C unless otherwise specified |
|
|
|
|
|
||||
Table 5. |
Electrical characteristics |
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
Symbol |
Parameter |
|
|
Test conditions |
Min. |
Typ. |
Max. |
Unit |
|
|
|
|
|
|
|
|
|
||
ICES |
Collector cut-off |
VCB = 60 V |
|
|
|
1 |
µA |
||
current (IE = 0) |
V |
CB |
= 60 V |
T = 150 °C |
|
|
10 |
µA |
|
|
|
|
|
amb |
|
|
|
|
|
IEBO |
Emitter cut-off current |
VEB = 5 V |
|
|
|
1 |
µA |
||
(IC = 0) |
VEB = 6 V |
|
|
|
1 |
mA |
|||
|
|
|
|
||||||
ICEO |
Collector cut-off |
VCE = 40 V |
|
|
|
50 |
µA |
||
current (IB = 0) |
|
|
|
||||||
|
|
|
|
|
|
|
|
|
|
V(BR)CEO (1) |
Collector-emitter |
|
|
|
|
|
|
|
|
breakdown voltage |
IC = 100 mA |
|
80 |
|
|
V |
|||
|
(IB = 0) |
|
|
|
|
|
|
|
|
(1) |
Collector-emitter |
IC = 5 A |
IB = 0.5 A |
|
|
1.5 |
V |
||
VCE(sat) |
saturation voltage |
IC = 2.5 A |
IB = 250 mA |
|
|
1.45 |
V |
||
|
|
|
|||||||
|
|
|
|
|
|
|
|
||
(1) |
Base-emitter |
IC = 2.5 A |
IB = 0.25 A |
|
|
1.45 |
V |
||
VBE(sat) |
saturation voltage |
IC = 5 A |
IB = 0.5 A |
|
|
2.2 |
V |
||
|
|
|
|||||||
|
|
|
|
|
|
|
|
||
|
|
IC = 50 mA |
VCE = 5 V |
50 |
|
|
|
||
(1) |
|
IC = 2.5 A |
VCE = 5 V |
70 |
|
200 |
|
||
DC current gain |
IC = 5 A |
VCE = 5 V |
40 |
|
|
|
|||
hFE |
|
|
|
||||||
|
|
IC = 2.5 A |
VCE = 5 V |
|
|
|
|
||
|
|
Tamb = - 55 °C |
|
35 |
|
|
|
||
hfe |
AC forward current |
VCE = 5 V |
IC = 500 mA |
3.5 |
|
|
|
||
transfer ratio |
f = 20 MHz |
|
|
|
|
||||
|
|
|
|
|
|
||||
|
|
|
|
|
|
|
|
||
COBO |
Output capacitance |
IE = 0 |
VCB = 10 V |
|
|
250 |
pF |
||
f = 1 MHz |
|
|
|
||||||
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
VCC |
= 30 V |
VBB = 4 V |
|
|
|
|
|
ton |
Turn-on time |
Vin 51 V |
IC = 5 A |
|
|
0.5 |
µs |
||
|
|
IB1 = - IB2 = 0.5 A |
|
|
|
|
|||
|
|
VCC |
= 30 V |
VBB = 4 V |
|
|
|
|
|
toff |
Turn-off time |
Vin 51 V |
IC = 5 A |
|
|
1.3 |
µs |
||
|
|
IB1 = - IB2 = 0.5 A |
|
|
|
|
|||
1. Pulsed duration = 300 µs, duty cycle ≤ 2% |
|
|
|
|
|
|
Doc ID 15387 Rev 3 |
3/10 |