ST 2N5153HR User Manual

				2N5153HR
			Hi-Rel PNP bipolar transistor 80 V - 5 A
Features
	BVCEO	80 V		2 3 1
	I (max)	5 A
	C
	HFE at 10 V - 150 mA	> 70	TO-257	TO-39
Operating temperature range		-65°C to +200°C		2
				1
■ Hi-Rel PNP bipolar transistor				3
■	Linear gain characteristics			SMD.5
■	ESCC qualified

■ European preferred part list - EPPL

Figure 1. Internal schematic diagram

■ Radiation level: lot specific total dose contact marketing for specified level

Description

The 2N5153HR is a silicon planar epitaxial PNP transistor in TO-39, TO-257 and SMD.5 packages. It is specifically designed for aerospace Hi-Rel applications and ESCC qualified according to the 5204-002 specification. In case of conflict between this datasheet and ESCC detailed specification, the latter prevails.

Table 1.	Device summary
Order codes		Packages	Lead finish	Marking	Type	EPPL	Packaging
2N5153HR		TO-39	Gold	520400201	ESCC Flight		Strip pack
			Solder Dip	520400202
2N5153SHR		SMD.5	Gold	520400206	ESCC Flight	Yes	Strip pack
2N5153ESYHR		TO-257	Gold	520400204	ESCC Flight		Strip pack
			Solder Dip	520400205
2N5153T1		TO-39	Gold	2N5153T1	Engineering		Strip pack
					model
2N5153S1		SMD.5	Gold	2N5153S1	Engineering		Strip pack
					model
2N5153ESY		TO-257	Gold	2N5153ESY	Engineering		Strip pack
					model
January 2010			Doc ID 15386 Rev 2				1/10
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Electrical ratings	2N5153HR

1 Electrical ratings

Table 2.	Absolute maximum ratings
Symbol	Parameter	Value	Unit
VCBO	Collector-base voltage (IE = 0)	-100	V
VCEO	Collector-emitter voltage (IB = 0)	-80	V
VEBO	Emitter-base voltage (IC = 0)	-5.5	V
IC	Collector current	-5	A
	Total dissipation at Tamb ≤ 25 °C
	for 2N5153HR	1	W
	for 2N5153ESYHRB	3.3	W
PTOT	for 2N5153HR	3.3	W
	TC ≤ 25 °C
	for 2N5153HR	10	W
	for 2N5153ESYHRB	35	W
	for 2N5153HR	35	W
TSTG	Storage temperature	-65 to 200	°C
TJ	Max. operating junction temperature	200	°C

Table 3.	Thermal data for through-hole packages
Symbol	Parameter		TO-39	TO-257	Unit
RthJC	Thermal resistance junction-case	max	17.5	5	°C/W
RthJA	Thermal resistance junction-ambient	max	175	53	°C/W

Table 4.	Thermal data for SMD package
Symbol	Parameter		SMD.5	Unit
RthJC	Thermal resistance junction-case	max	5	°C/W

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2N5153HR	Electrical characteristics

2 Electrical characteristics

Tcase = 25 °C unless otherwise specified
Table 5.		Electrical characteristics
	Symbol	Parameter			Test conditions		Min.	Typ.	Max.	Unit
	ICES	Collector cut-off	VCB = - 60 V						-1	µA
		current (IE = 0)	V	CB	= - 60 V	T = 150 °C			-10	µA
						amb
	IEBO	Emitter cut-off current	VEB = - 4 V						-1	µA
		(IC = 0)	VEB = - 5.5 V						-1	mA
	ICEO	Collector cut-off	VCE = - 40 V						-50	µA
		current (IB = 0)
	(1)	Collector-emitter
V		breakdown voltage	I = - 100 mA				-80			V
	(BR)CEO	(IB = 0)	C
	(1)	Collector-emitter
VCE(sat)		saturation voltage	IC = - 5 A			IB = - 0.5 A			-1.5	V
	(1)	Base-emitter	IC = - 2.5 A			IB = - 0.25 A			-1.45	V
VBE(sat)		saturation voltage	IC = - 5 A			IB = - 0.5 A			-2.2	V
			IC = - 50 mA			VCE = - 5 V	50
	(1)		IC = - 2.5 A			VCE = - 5 V	70		200
		DC current gain	IC = - 5 A			VCE = - 5 V	40
	hFE
			IC = - 2.5 A			VCE = - 5 V
			Tamb = - 55 °C				35
	hfe	AC forward current	VCE = - 5 V			IC = - 500 mA	3.5
		transfer ratio	f = 20 MHz
	COBO	Output capacitance	IE = 0			VCB = - 10 V			250	pF
			f = 1 MHz
			VCC		= - 30 V	VBB = - 4 V
	ton	Turn-on time	Vin - 51 V			IC = 5 A			0.5	µs
			IB1 = - IB2 = - 0.5 A
			VCC		= - 30 V	VBB = - 4 V
	toff	Turn-off time	Vin - 51 V			IC = - 5 A			1.3	µs
			IB1 = - IB2 = - 0.5 A
1.	Pulsed duration = 300 µs, duty cycle ≤ 1.5%

Doc ID 15386 Rev 2

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