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2N5153HR |
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Hi-Rel PNP bipolar transistor 80 V - 5 A |
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Features |
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BVCEO |
80 V |
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2 3 1 |
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I (max) |
5 A |
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C |
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HFE at 10 V - 150 mA |
> 70 |
TO-257 |
TO-39 |
Operating temperature range |
-65°C to +200°C |
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■ Hi-Rel PNP bipolar transistor |
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Linear gain characteristics |
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SMD.5 |
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ESCC qualified |
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■ European preferred part list - EPPL |
Figure 1. Internal schematic diagram |
■ Radiation level: lot specific total dose contact marketing for specified level
Description
The 2N5153HR is a silicon planar epitaxial PNP transistor in TO-39, TO-257 and SMD.5 packages. It is specifically designed for aerospace Hi-Rel applications and ESCC qualified according to the 5204-002 specification. In case of conflict between this datasheet and ESCC detailed specification, the latter prevails.
Table 1. |
Device summary |
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Order codes |
Packages |
Lead finish |
Marking |
Type |
EPPL |
Packaging |
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2N5153HR |
TO-39 |
Gold |
520400201 |
ESCC Flight |
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Strip pack |
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Solder Dip |
520400202 |
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2N5153SHR |
SMD.5 |
Gold |
520400206 |
ESCC Flight |
Yes |
Strip pack |
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2N5153ESYHR |
TO-257 |
Gold |
520400204 |
ESCC Flight |
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Strip pack |
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Solder Dip |
520400205 |
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2N5153T1 |
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TO-39 |
Gold |
2N5153T1 |
Engineering |
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Strip pack |
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model |
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2N5153S1 |
SMD.5 |
Gold |
2N5153S1 |
Engineering |
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Strip pack |
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2N5153ESY |
TO-257 |
Gold |
2N5153ESY |
Engineering |
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Strip pack |
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model |
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January 2010 |
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Doc ID 15386 Rev 2 |
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1/10 |
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www.st.com |
Electrical ratings |
2N5153HR |
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Table 2. |
Absolute maximum ratings |
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Symbol |
Parameter |
Value |
Unit |
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VCBO |
Collector-base voltage (IE = 0) |
-100 |
V |
VCEO |
Collector-emitter voltage (IB = 0) |
-80 |
V |
VEBO |
Emitter-base voltage (IC = 0) |
-5.5 |
V |
IC |
Collector current |
-5 |
A |
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Total dissipation at Tamb ≤ 25 °C |
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for 2N5153HR |
1 |
W |
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for 2N5153ESYHRB |
3.3 |
W |
PTOT |
for 2N5153HR |
3.3 |
W |
TC ≤ 25 °C |
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for 2N5153HR |
10 |
W |
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for 2N5153ESYHRB |
35 |
W |
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for 2N5153HR |
35 |
W |
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TSTG |
Storage temperature |
-65 to 200 |
°C |
TJ |
Max. operating junction temperature |
200 |
°C |
Table 3. |
Thermal data for through-hole packages |
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Symbol |
Parameter |
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TO-39 |
TO-257 |
Unit |
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RthJC |
Thermal resistance junction-case |
max |
17.5 |
5 |
°C/W |
RthJA |
Thermal resistance junction-ambient |
max |
175 |
53 |
°C/W |
Table 4. |
Thermal data for SMD package |
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Symbol |
Parameter |
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SMD.5 |
Unit |
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RthJC |
Thermal resistance junction-case |
max |
5 |
°C/W |
2/10 |
Doc ID 15386 Rev 2 |
2N5153HR |
Electrical characteristics |
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Tcase = 25 °C unless otherwise specified |
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Table 5. |
Electrical characteristics |
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Symbol |
Parameter |
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Test conditions |
Min. |
Typ. |
Max. |
Unit |
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Collector cut-off |
VCB = - 60 V |
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-1 |
µA |
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current (IE = 0) |
V |
CB |
= - 60 V |
T = 150 °C |
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-10 |
µA |
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amb |
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IEBO |
Emitter cut-off current |
VEB = - 4 V |
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-1 |
µA |
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(IC = 0) |
VEB = - 5.5 V |
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-1 |
mA |
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ICEO |
Collector cut-off |
VCE = - 40 V |
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-50 |
µA |
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current (IB = 0) |
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(1) |
Collector-emitter |
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V |
breakdown voltage |
I = - 100 mA |
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-80 |
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V |
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(BR)CEO |
(IB = 0) |
C |
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(1) |
Collector-emitter |
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VCE(sat) |
saturation voltage |
IC = - 5 A |
IB = - 0.5 A |
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-1.5 |
V |
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(1) |
Base-emitter |
IC = - 2.5 A |
IB = - 0.25 A |
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-1.45 |
V |
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VBE(sat) |
saturation voltage |
IC = - 5 A |
IB = - 0.5 A |
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-2.2 |
V |
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IC = - 50 mA |
VCE = - 5 V |
50 |
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(1) |
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IC = - 2.5 A |
VCE = - 5 V |
70 |
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200 |
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DC current gain |
IC = - 5 A |
VCE = - 5 V |
40 |
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hFE |
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IC = - 2.5 A |
VCE = - 5 V |
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Tamb = - 55 °C |
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hfe |
AC forward current |
VCE = - 5 V |
IC = - 500 mA |
3.5 |
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transfer ratio |
f = 20 MHz |
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COBO |
Output capacitance |
IE = 0 |
VCB = - 10 V |
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250 |
pF |
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f = 1 MHz |
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VCC |
= - 30 V |
VBB = - 4 V |
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ton |
Turn-on time |
Vin - 51 V |
IC = 5 A |
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0.5 |
µs |
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IB1 = - IB2 = - 0.5 A |
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VCC |
= - 30 V |
VBB = - 4 V |
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toff |
Turn-off time |
Vin - 51 V |
IC = - 5 A |
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1.3 |
µs |
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IB1 = - IB2 = - 0.5 A |
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1. |
Pulsed duration = 300 µs, duty cycle ≤ 1.5% |
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Doc ID 15386 Rev 2 |
3/10 |