ST 2N5153HR User Manual

Hi-Rel PNP bipolar transistor 80 V - 5 A

Features

BV

CEO

(max) 5 A

I

C

H

at 10 V - 150 mA > 70

FE

Operating temperature range -65°C to +200°C

■ Hi-Rel PNP bipolar transistor

■ Linear gain characteristics

■ ESCC qualified

■ European preferred part list - EPPL

■ Radiation level: lot specific total dose contact

marketing for specified level

80 V

2N5153HR

1

3

2

TO-39TO-257

2

1

3

SMD.5

Figure 1. Internal schematic diagram

Description

The 2N5153HR is a silicon planar epitaxial PNP transistor in TO-39, TO-257 and SMD.5 packages. It is specifically designed for aerospace Hi-Rel applications and ESCC qualified according to the 5204-002 specification. In case of conflict between this datasheet and ESCC detailed specification, the latter prevails.

Table 1. Device summary

Order codes Packages Lead finish Marking Type EPPL Packaging

2N5153HR TO-39

Gold

Solder Dip

2N5153SHR SMD.5 Gold 520400206 ESCC Flight Yes Strip pack

2N5153ESYHR TO-257

Gold

Solder Dip

2N5153T1 TO-39 Gold 2N5153T1

2N5153S1 SMD.5 Gold 2N5153S1

520400201 520400202

520400204 520400205

ESCC Flight Strip pack

Engineering

model

Engineering

model

Strip pack

2N5153ESY TO-257 Gold 2N5153ESY

Engineering

model

Strip pack

January 2010 Doc ID 15386 Rev 2 1/10

www.st.com

10

Electrical ratings 2N5153HR

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

V

P

T

Collector-base voltage (IE = 0) -100 V

CBO

Collector-emitter voltage (IB = 0) -80 V

CEO

Emitter-base voltage (IC = 0) -5.5 V

EBO

Collector current -5 A

I

C

Total dissipation at T for 2N5153HR for 2N5153ESYHRB for 2N5153HR

TOT

T for 2N5153HR for 2N5153ESYHRB for 2N5153HR

Storage temperature -65 to 200 °C

STG

Max. operating junction temperature 200 °C

T

J

≤ 25 °C

amb

≤ 25 °C

C

1

3.3

10 35 35

Table 3. Thermal data for through-hole packages

Symbol Parameter TO-39 TO-257 Unit

R R

Thermal resistance junction-case __ max

thJC

Thermal resistance junction-ambient __ max

thJA

17.5 175

53

5

°C/W °C/W

W W W

Table 4. Thermal data for SMD package

Symbol Parameter SMD.5 Unit

R

2/10 Doc ID 15386 Rev 2

Thermal resistance junction-case __ max 5 °C/W

thJC

2N5153HR Electrical characteristics

2 Electrical characteristics

T

= 25 °C unless otherwise specified

case

Table 5. Electrical characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

CES

I

EBO

I

CEO

V

(BR)CEO

V

CE(sat)

V

BE(sat)

h

FE

Collector cut-off current (I

Emitter cut-off current

= 0)

(I

C

Collector cut-off current (IB = 0)

Collector-emitter

(1)

breakdown voltage

= 0)

(I

B

Collector-emitter

(1)

saturation voltage

Base-emitter

(1)

saturation voltage

(1)

DC current gain

= 0)

E

V

CB

V

CB

V

EB

V

EB

V

CE

IC = - 100 mA -80 V

I

C

I

C

I

C

I

C

I

C

I

C

IC = - 2.5 A V T

amb

h

fe

C

OBO

t

on

t

off

1. Pulsed duration = 300 µs, duty cycle ≤ 1.5%

AC forward current transfer ratio

Output capacitance

Turn-on time

Turn-off time

V

CE

f = 20 MHz

I

E

f = 1 MHz

V

CC

V

in

I

B1

V

CC

V

in

I

B1

= - 60 V = - 60 V T

= - 4 V = - 5.5 V

= 150 °C

amb

-1

-10µAµA

-1

µA

-1

mA

= - 40 V -50 µA

= - 5 A IB = - 0.5 A -1.5 V

= - 2.5 A IB = - 0.25 A = - 5 A IB = - 0.5 A

= - 50 mA V = - 2.5 A V = - 5 A V

CE

= - 5 V = - 5 V = - 5 V = - 5 V

= - 55 °C

= - 5 V IC = - 500 mA

= 0 V

= - 30 V V

≅ - 51 V I

= - I

= - 0.5 A

B2

= - 30 V V

≅ - 51 V I

= - I

= - 0.5 A

B2

CB

BB

C

BB

C

= 5 A

= - 10 V

= - 4 V

= - 5 A

50 70 40

35

3.5

-1.45

-2.2

200

250 pF

0.5 µs

1.3 µs

V V

Doc ID 15386 Rev 2 3/10