ST 2N3810HR User Manual

2N3810HR

Hi-Rel PNP dual matched bipolar transistor 60 V - 0.05 A

Features

BVCEO	60 V
IC (max)	0.05 A
HFE at 10 V - 150 mA	> 150
Operating temperature range	-65°C to +200°C

■Hi-Rel PNP dual matched bipolar transistor

■Linear gain characteristics

■ESCC qualified

■European preferred part list - EPPL

■Radiation level: lot specific total dose contact marketing for specified level

Description

The 2N3810HR is a silicon planar epitaxial PNP transistor in TO-78 and LCC-6 packages. It is specifically designed for aerospace Hi-Rel applications and ESCC qualified according to the 5207-005 specification. In case of conflict between this datasheet and ESCC detailed specification, the latter prevails.

2 1

3 4

5 6

TO-78

LCC-6

Figure 1. Internal schematic diagram

for TO-78

for LCC-6

	Table 1.	Device summary
	Order codes		Packages	Lead finish	Marking	Type	EPPL	Packaging
	2N3810HR		TO-78	Gold	520700501	ESCC Flight		Strip pack
				Solder Dip	520700502
	2N3810T1		TO-78	Gold	2N3810T1	Engineering		Strip pack
						model
	SOC3810		LCC-6	Gold	SOC3810	Engineering		Waffle pack
						model
	SOC3810HRB		LCC-6	Gold	520700507	ESCC Flight	Yes	Waffle pack
				Solder Dip	520700509
	January 2010			Doc ID 15385 Rev 2				1/9
								www.st.com

Electrical ratings	2N3810HR

1 Electrical ratings

Table 2.	Absolute maximum ratings
Symbol	Parameter		Value	Unit
VCBO	Collector-base voltage (IE = 0)		-60	V
VCEO	Collector-emitter voltage (IB = 0)		-60	V
VEBO	Emitter-base voltage (IC = 0)		-5	V
IC	Collector current		-50	mA
	Total dissipation at Tamb ≤ 25 °C
	for 2N3810HR (1)		0.5	W
	for 2N3810HR (2)		0.6	W
PTOT	for SOC3810HRB (1) (3)		0.6	W
	for SOC3810HRB	(2) (3)	1.2	W
	Total dissipation at Tc ≤ 25 °C
	for 2N3810HR (1)		0.5	W
	for 2N3810HR (2)		0.6	W
TSTG	Storage temperature		-65 to 200	°C
TJ	Max. operating junction temperature		200	°C

1.One section.

2.Both sections.

3.When mounted on a 15 x 15 x 0.6 mm ceramic substrate.

Table 3.	Thermal data for through-hole package
Symbol	Parameter		Value	Unit
R	Thermal resistance junction-case (1)	max	350	°C/W
thJC	Thermal resistance junction-case (2)
		max	292	°C/W
R	Thermal resistance junction-ambient (1)	max	350	°C/W
thJA	Thermal resistance junction-ambient (2)
		max	292	°C/W

1.One section.

2.Both sections.

Table 4.	Thermal data for SMD package
Symbol	Parameter		Value	Unit
RthJA	Thermal resistance junction-ambient (1)(3)	max	292	°C/W
	Thermal resistance junction-ambient (2)(3)	max	146	°C/W

1.One section.

2.Both sections.

3.When mounted on a 15 x 15 x 0.6 mm ceramic substrate.

2/9	Doc ID 15385 Rev 2

2N3810HR	Electrical characteristics

2 Electrical characteristics

Tcase = 25 °C unless otherwise specified.

Table 5.	Electrical characteristics
Symbol		Parameter			Test conditions		Min.	Typ.	Max.	Unit
ICBO		Collector-base cut-off	VCB = -50 V						-10	nA
		current (IE = 0)	V	CB	= -50 V	T = 150 °C			-10	µA
						C
IEBO		Emitter-base cut-off	VEB = -4 V						-20	nA
		current (IC = 0)
		Collector-base
V(BR)CBO		breakdown voltage	IC = -10 µA				-60			V
		(IE = 0)
(1)		Collector-emitter
		breakdown voltage	IC = -10 mA				-60			V
V(BR)CEO
		(IB = 0)
		Emitter-base
V(BR)EBO		breakdown voltage	IE = -10 µA				-5			V
		(IC = 0)
(1)		Collector-emitter	IC = -100 µA			IB = -10 µA			-0.2	V
VCE(sat)		saturation voltage	IC = -1 mA			IB = -100 µA			-0.25	V
(1)		Base-emitter	IC = -100 µA			IB = -10 µA			-0.7	V
VBE(sat)		saturation voltage	IC = -1 mA			IB = -100 µA			-0.8	V
			IC = -10 µA			VCE = -5 V	100
			IC = -100 µA			VCE = -5 V	150		450
(1)			IC = -500 µA			VCE = -5 V	150		450
		DC current gain	IC = -1 mA			VCE = -5 V	150		450
hFE
			IC = -10 mA			VCE = -5 V	125
			IC = -100 µA			VCE = -5 V
			Tamb = -55 °C				60
hFE2-1 / hFE2-2		DC current ratio	IC = -100 µA			VCE = -5 V	0.91		1.1
		comparison
hFE2-1 / hFE2-2		DC current ratio	IC = -100 µA			VCE = -5 V	0.85		1.18
		comparison	T		= -55 °C to +125 °C
			amb
ΔVBE1 -		Base-emitter voltage	VCE = -5 V			IC = -10 µA			5	mV
			VCE = -5 V			IC = -100 µA			3	mV
VBE2		differential
			VCE = -5 V			IC = -10 mA			5	mV
ΔVBE1 -		Base-emitter voltage	VCE = -5 V			IC = -100 µA
			Tamb = -55 °C to +25 °C						0.8	mV
VBE2		differential
			Tamb = +25 °C to +125 °C						1	mV
		Leakage current	V = -50 V to E2, B2, C2
ILk		between active							-5	µA
			V = 0 V to E1, B1, C1
		devices
hfe		Small signal current	VCE = -5 V			IC = -10 mA	125
		gain	f = 1 kHz

Doc ID 15385 Rev 2

3/9