2N3810HR
Hi-Rel PNP dual matched bipolar transistor 60 V - 0.05 A
Features
BVCEO |
60 V |
IC (max) |
0.05 A |
HFE at 10 V - 150 mA |
> 150 |
Operating temperature range |
-65°C to +200°C |
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■Hi-Rel PNP dual matched bipolar transistor
■Linear gain characteristics
■ESCC qualified
■European preferred part list - EPPL
■Radiation level: lot specific total dose contact marketing for specified level
Description
The 2N3810HR is a silicon planar epitaxial PNP transistor in TO-78 and LCC-6 packages. It is specifically designed for aerospace Hi-Rel applications and ESCC qualified according to the 5207-005 specification. In case of conflict between this datasheet and ESCC detailed specification, the latter prevails.
2 1
3 4
5 6
TO-78 |
LCC-6 |
for TO-78
for LCC-6
Table 1. |
Device summary |
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Order codes |
Packages |
Lead finish |
Marking |
Type |
EPPL |
Packaging |
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2N3810HR |
TO-78 |
Gold |
520700501 |
ESCC Flight |
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Strip pack |
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Solder Dip |
520700502 |
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2N3810T1 |
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TO-78 |
Gold |
2N3810T1 |
Engineering |
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Strip pack |
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model |
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SOC3810 |
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LCC-6 |
Gold |
SOC3810 |
Engineering |
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Waffle pack |
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model |
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SOC3810HRB |
LCC-6 |
Gold |
520700507 |
ESCC Flight |
Yes |
Waffle pack |
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Solder Dip |
520700509 |
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January 2010 |
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Doc ID 15385 Rev 2 |
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1/9 |
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www.st.com |
Electrical ratings |
2N3810HR |
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Table 2. |
Absolute maximum ratings |
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Symbol |
Parameter |
Value |
Unit |
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VCBO |
Collector-base voltage (IE = 0) |
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-60 |
V |
VCEO |
Collector-emitter voltage (IB = 0) |
-60 |
V |
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VEBO |
Emitter-base voltage (IC = 0) |
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-5 |
V |
IC |
Collector current |
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-50 |
mA |
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Total dissipation at Tamb ≤ 25 °C |
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for 2N3810HR (1) |
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0.5 |
W |
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for 2N3810HR (2) |
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0.6 |
W |
PTOT |
for SOC3810HRB (1) (3) |
0.6 |
W |
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for SOC3810HRB |
(2) (3) |
1.2 |
W |
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Total dissipation at Tc ≤ 25 °C |
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for 2N3810HR (1) |
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0.5 |
W |
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for 2N3810HR (2) |
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0.6 |
W |
TSTG |
Storage temperature |
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-65 to 200 |
°C |
TJ |
Max. operating junction temperature |
200 |
°C |
1.One section.
2.Both sections.
3.When mounted on a 15 x 15 x 0.6 mm ceramic substrate.
Table 3. |
Thermal data for through-hole package |
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Symbol |
Parameter |
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Value |
Unit |
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R |
Thermal resistance junction-case (1) |
max |
350 |
°C/W |
thJC |
Thermal resistance junction-case (2) |
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max |
292 |
°C/W |
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R |
Thermal resistance junction-ambient (1) |
max |
350 |
°C/W |
thJA |
Thermal resistance junction-ambient (2) |
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max |
292 |
°C/W |
1.One section.
2.Both sections.
Table 4. |
Thermal data for SMD package |
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Symbol |
Parameter |
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Value |
Unit |
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RthJA |
Thermal resistance junction-ambient (1)(3) |
max |
292 |
°C/W |
Thermal resistance junction-ambient (2)(3) |
max |
146 |
°C/W |
1.One section.
2.Both sections.
3.When mounted on a 15 x 15 x 0.6 mm ceramic substrate.
2/9 |
Doc ID 15385 Rev 2 |
2N3810HR |
Electrical characteristics |
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Tcase = 25 °C unless otherwise specified.
Table 5. |
Electrical characteristics |
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Symbol |
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Parameter |
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Test conditions |
Min. |
Typ. |
Max. |
Unit |
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ICBO |
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Collector-base cut-off |
VCB = -50 V |
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-10 |
nA |
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current (IE = 0) |
V |
CB |
= -50 V |
T = 150 °C |
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-10 |
µA |
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C |
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IEBO |
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Emitter-base cut-off |
VEB = -4 V |
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-20 |
nA |
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current (IC = 0) |
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Collector-base |
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V(BR)CBO |
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breakdown voltage |
IC = -10 µA |
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-60 |
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V |
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(IE = 0) |
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(1) |
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Collector-emitter |
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breakdown voltage |
IC = -10 mA |
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-60 |
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V |
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V(BR)CEO |
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(IB = 0) |
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Emitter-base |
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V(BR)EBO |
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breakdown voltage |
IE = -10 µA |
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-5 |
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V |
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(IC = 0) |
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(1) |
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Collector-emitter |
IC = -100 µA |
IB = -10 µA |
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-0.2 |
V |
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VCE(sat) |
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saturation voltage |
IC = -1 mA |
IB = -100 µA |
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-0.25 |
V |
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(1) |
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Base-emitter |
IC = -100 µA |
IB = -10 µA |
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-0.7 |
V |
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VBE(sat) |
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saturation voltage |
IC = -1 mA |
IB = -100 µA |
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-0.8 |
V |
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IC = -10 µA |
VCE = -5 V |
100 |
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IC = -100 µA |
VCE = -5 V |
150 |
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450 |
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(1) |
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IC = -500 µA |
VCE = -5 V |
150 |
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450 |
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DC current gain |
IC = -1 mA |
VCE = -5 V |
150 |
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450 |
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hFE |
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IC = -10 mA |
VCE = -5 V |
125 |
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IC = -100 µA |
VCE = -5 V |
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Tamb = -55 °C |
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60 |
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hFE2-1 / hFE2-2 |
DC current ratio |
IC = -100 µA |
VCE = -5 V |
0.91 |
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1.1 |
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comparison |
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hFE2-1 / hFE2-2 |
DC current ratio |
IC = -100 µA |
VCE = -5 V |
0.85 |
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1.18 |
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comparison |
T |
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= -55 °C to +125 °C |
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amb |
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ΔVBE1 - |
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Base-emitter voltage |
VCE = -5 V |
IC = -10 µA |
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5 |
mV |
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VCE = -5 V |
IC = -100 µA |
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3 |
mV |
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VBE2 |
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differential |
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VCE = -5 V |
IC = -10 mA |
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5 |
mV |
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ΔVBE1 - |
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Base-emitter voltage |
VCE = -5 V |
IC = -100 µA |
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Tamb = -55 °C to +25 °C |
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0.8 |
mV |
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VBE2 |
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differential |
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Tamb = +25 °C to +125 °C |
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1 |
mV |
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Leakage current |
V = -50 V to E2, B2, C2 |
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ILk |
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between active |
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-5 |
µA |
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V = 0 V to E1, B1, C1 |
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devices |
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hfe |
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Small signal current |
VCE = -5 V |
IC = -10 mA |
125 |
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gain |
f = 1 kHz |
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Doc ID 15385 Rev 2 |
3/9 |