ST 2N3700HR User Manual

				2N3700HR
		Hi-Rel 80 V - 1 A NPN bipolar transistor
Features
				3
	BVCEO	80 V	1	1
	IC (max)	1 A	2	2
			3
	HFE at 10 V - 150 mA	> 100	TO-18	LCC-3
Operating temperature range		-65°C to +200°C		3
			4
■ Hi-Rel NPN bipolar transistor				1
■	Linear gain characteristics			2
■	ESCC qualified		LCC-3UB
■ European preferred part list - EPPL

■ 100 krad low dose rate

Figure 1. Internal schematic diagram

■ Radiation level: lot specific total dose contact marketing for specified level

Description

The 2N3700HR is a silicon planar epitaxial NPN transistor in TO-18 and LCC-3 packages. It is specifically designed for aerospace Hi-Rel applications and ESCC qualified according to the 5201-004 specification. In case of conflict between this datasheet and ESCC detailed specification, the latter prevails.

Table 1.	Device summary
Order codes		ESCC part num.	Qual. level	Rad level	Packages	Lead finish	Mass (g)	EPPL
2N37000UB1		-	Eng. model		LCC-3UB	Gold	0.06	-
2N37000UBSW		5201/004/07	ESCC flight	100 krad	LCC-3UB	Solder dip	0.06	Y
2N37000UB06		5201/004/06	ESCC flight		LCC-3UB	Gold	0.06	-
2N37000UB07		5201/004/07	ESCC flight		LCC-3UB	Solder dip	0.06	-
SOC37000		-	Eng. model		LCC-3	Gold	0.06	-
SOC3700SW		5201/004/05	ESCC flight	100 krad	LCC-3	Solder dip	0.06	Y
SOC3700HRB		5201/004/04 or 05	ESCC flight		LCC-3	Gold/Solder dip(1)	0.06	Y
2N3700T1		-	Eng. model		TO-18	Gold	0.40	-
2N3700HR		5201/004/01 or 02	ESCC flight		TO-18	Gold/Solder dip(1)	0.40	-

1.Depending ESCC part number mentioned on the purchase order

November 2011

Doc ID 15354 Rev 4

1/12

www.st.com

Electrical ratings	2N3700HR

1 Electrical ratings

Table 2.	Absolute maximum ratings
Symbol	Parameter	Value	Unit
VCBO	Collector-base voltage (IE = 0)	140	V
VCEO	Collector-emitter voltage (IB = 0)	80	V
VEBO	Emitter-base voltage (IC = 0)	7	V
IC	Collector current	1	A
	Total dissipation at Tamb ≤ 25 °C
	for 2N3700HR	0.5	W
	for SOC3700HRB	0.5	W
Ptot	for SOC3700HRB (1)	0.76	W
	Total dissipation at Tc ≤ 25 °C
	for 2N3700HR	1.8	W
Tstg	Storage temperature	-65 to 200	°C
TJ	Max. operating junction temperature	200	°C

1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate.

Table 3.	Thermal data for through-hole package
Symbol	Parameter		TO-18	Unit
RthJC	Thermal resistance junction-case	max	97	°C/W
RthJA	Thermal resistance junction-ambient	max	350	°C/W

Table 4.	Thermal data for SMD package
Symbol	Parameter		SOC	Unit
RthJA	Thermal resistance junction-ambient	max	350	°C/W
R	Thermal resistance junction-ambient (1)	max	230	°C/W
thJA

1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate.

2/12	Doc ID 15354 Rev 4

2N3700HR	Electrical characteristics

2 Electrical characteristics

Tcase = 25 °C unless otherwise specified.

Table 5.		Electrical characteristics
	Symbol	Parameter	Test conditions		Min.	Typ.	Max.	Unit
		Collector cut-off	VCB = 90 V				10	nA
	ICBO		VCB = 90 V	Tamb = 110 °C			100	nA
		current (IE = 0)
			VCB = 90 V	Tamb = 150 °C			10	µA
	IEBO	Emitter cut-off current	VEB = 5 V				10	nA
		(IC = 0)
		Collector-base
V(BR)CBO		breakdown voltage	IC = 100 µA		140			V
		(IE = 0)
	(1)	Collector-emitter
V		breakdown voltage	I = 30 mA		80			V
	(BR)CEO	(IB = 0)	C
		Emitter-base
V(BR)EBO		breakdown voltage	IE = 100 µA		7			V
		(IC = 0)
	(1)	Collector-emitter	IC = 150 mA	IB = 15 mA			0.2	V
VCE(sat)		saturation voltage	IC = 500 mA	IB = 50 mA			0.5	V
	(1)	Base-emitter	IC = 150 mA	IB = 15 mA	0.75	0.87	1	V
VBE(sat)		saturation voltage	IC = 150 mA	IB = 15 mA
			Tamb = 110 °C		0.65	0.77	0.9	V
			IC = 10 mA	VCE = 10 V	90
	(1)		IC = 150 mA	VCE = 10 V	100		300
		DC current gain	IC = 500 mA	VCE = 10 V	50
	hFE
			IC = 150 mA	VCE = 10 V
			Tamb = - 55 °C		40
	hfe	Small signal current	VCE = 10 V	IC = 50 mA	5
		gain	f = 20 MHz
	CCBO	Output capacitance	VCB = 10 V	f = 1 MHz			12	pF
		(IE = 0)
	CIBO	Input capacitance	VEB = 0.5 V	f = 1 MHz			60	pF
		(IC = 0)
1.	Pulsed duration = 300 µs, duty cycle ≤ 2 %

Doc ID 15354 Rev 4

3/12

Electrical characteristics	2N3700HR

2.1Electrical characteristics (curves)

Figure 2. DC current gain	Figure 3. DC current gain
(VCE=1 V)	(VCE=10 V)

(					(
6#% 6					6#%6
		#						#
	#					#
		#					#
		,F$		!-V			,F$		!-V

Figure 4. Collector emitter saturation Figure 5.	Base emitter saturation
voltage	voltage

	H&%6				H&%6
		#
			#
							#
			#
							#
						#
		,F$
						,F$
		!-V					!-V

4/12	Doc ID 15354 Rev 4