ST 2N3019HR User Manual
Features
BV
CEO
(max) 1 A
I
C
H
at 10 V - 150 mA > 100
FE
Operating temperature range -65°C to +200°C
80 V
2N3019HR
Hi-Rel NPN bipolar transistor 80 V - 1 A
■ Hi-Rel NPN bipolar transistor
■ Linear gain characteristics
■ ESCC qualified
■ European preferred part list - EPPL
■ Radiation level: lot specific total dose contact
marketing for specified level
Description
The 2N3019AHR is a silicon planar epitaxial NPN
transistors in TO-39 package. It is specifically
designed for aerospace Hi-Rel applications and
ESCC qualified according to the 5201-011
specification. In case of conflict between this
datasheet and ESCC detailed specification, the
latter prevails.
TO-39
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes Package Lead finish Marking Type EPPL Packaging
2N3019HR TO-39
January 2010 Doc ID 15384 Rev 2 1/7
Gold
Solder Dip
520101103
520101104
ESCC Flight Yes Strip pack
www.st.com
7
Electrical ratings 2N3019HR
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
V
V
P
T
Collector-base voltage (IE = 0) 140 V
CBO
Collector-emitter voltage (IB = 0) 80 V
CEO
Emitter-base voltage (IC = 0) 7 V
EBO
I
Collector current 1 A
C
Total dissipation at T
TOT
Total dissipation at T
Storage temperature -65 to 200 °C
STG
Max. operating junction temperature 200 °C
T
J
≤ 25 °C
amb
≤ 25 °C
c
0.8
5
Table 3. Thermal data
Symbol Parameter Value Unit
R
R
Thermal resistance junction-case __ max
thJC
Thermal resistance junction-ambient __ max
thJA
35
218
°C/W
°C/W
W
W
2/7 Doc ID 15384 Rev 2
2N3019HR Electrical characteristics
2 Electrical characteristics
T
= 25 °C unless otherwise specified
case
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CES
I
EBO
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CE(sat)
V
BE(sat)
h
FE
Collector cut-off
current (I
= 0)
E
Emitter cut-off current
(IC = 0)
= 90 V
V
CB
V
= 90 V T
CB
= 5 V 10 nA
V
EB
= 150 °C
amb
10
10
nA
µA
Collector-base
breakdown voltage
= 0)
(I
E
Collector-emitter
(1)
breakdown voltage
= 0)
(I
B
IC = 100 µA 140 V
IC = 30 mA 80 V
Emitter-base
breakdown voltage
IE = 100 µA 7 V
(IC = 0)
= 150 mA IB = 15 mA
Collector-emitter
(1)
saturation voltage
Base-emitter
(1)
saturation voltage
(1)
DC current gain
h
fe
Small signal current
gain
I
C
IC = 500 mA IB = 50 mA
= 150 mA IB = 15 mA 1.1 V
I
C
= 0.1 mA V
I
C
= 10 mA V
I
C
= 150 mA V
I
C
IC = 500 mA V
= 1 A V
I
C
= 150 mA V
I
C
T
= -65 °C
amb
= 10 V IC = 50 mA
V
CE
CE
f = 20 MHz
CE
CE
CE
CE
CE
= 10 V
= 10 V
= 10 V
= 10 V
= 10 V
= 10 V
50
90
100
50
15
40
520
0.2
0.5
200
300
200
V
V
Small signal short
h
fe
circuit forward current
V
transfer ratio
C
CBO
C
IBO
NF Noise figure
t
C(CB)
t
on + toff
1. Pulsed duration = 300 µs, duty cycle ≤ 2 %
Output capacitance
(IE = 0)
Input capacitance
= 0)
(I
C
Collector- base
constant time
Pulse response V
V
V
V
R
V
f = 79.8 MHz
Doc ID 15384 Rev 2 3/7
= 5 V IC = 1 mA 80 400
CE
= 10 V f = 1 MHz 12 pF
CB
= 0.5 V f = 1 MHz 60 pF
EB
= 10 V IC = 100 µA
CE
= 1 kΩ Bandwidth = 200 Hz
G
= 10 V IC = 10 mA
CE
= 20 V see Figure 4 30 ns
CC
4dB
400 ps
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