ST 2N2905AHR User Manual
Hi-Rel PNP bipolar transistor 60 V - 0.6 A
Features
BV
CEO
(max) 0.6 A
I
C
H
at 10 V - 150 mA > 100
FE
Operating temperature range -65°C to +200°C
■ Hi-Rel PNP bipolar transistor
■ Linear gain characteristics
■ ESCC qualified
■ European preferred part list - EPPL
■ Radiation level: lot specific total dose contact
marketing for specified level
60 V
2N2905AHR
TO-39
Figure 1. Internal schematic diagram
Description
The 2N2905AHR is a silicon planar epitaxial PNP
transistors in TO-39 package. It is specifically
designed for aerospace Hi-Rel applications and
ESCC qualified according to the 5202-002
specification. In case of conflict between this
datasheet and ESCC detailed specification, the
latter prevails.
Table 1. Device summary
Order codes Package Lead finish Marking Type EPPL Packaging
2N2905AHR TO-39
2N2905AHR TO-39 Gold 2N2905AT1
Gold
Solder Dip
520200201
520200202
ESCC Flight Yes Strip pack
Engineering
model
Strip pack
January 2010 Doc ID 15295 Rev 2 1/8
www.st.com
8
Electrical ratings 2N2905AHR
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
V
V
P
T
Collector-base voltage (IE = 0) -60 V
CBO
Collector-emitter voltage (IB = 0) -60 V
CEO
Emitter-base voltage (IC = 0) -5 V
EBO
I
Collector current -0.6 A
C
Total dissipation at T
TOT
Total dissipation at T
Storage temperature -65 to 200 °C
STG
T
Max. operating junction temperature 200 °C
J
≤ 25 °C
amb
≤ 25 °C
c
0.6
3
Table 3. Thermal data
Symbol Parameter Value Unit
R
R
Thermal resistance junction-case __ max
thJC
Thermal resistance junction-ambient __ max
thJA
58
291
°C/W
°C/W
W
W
2/8 Doc ID 15295 Rev 2
2N2905AHR Electrical characteristics
2 Electrical characteristics
T
= 25 °C unless otherwise specified.
case
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CBO
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CE(sat)
V
BE(sat)
h
FE
Collector-base cut-off
current (I
= 0)
E
= -50 V
V
CB
V
= -50 V TC = 150 °C
CB
-10
-10nAµA
Collector-base
breakdown voltage
= 0)
(I
E
= -10 µA -60 V
I
C
Collector-emitter
(1)
breakdown voltage
= 0)
(I
B
= -10 mA -60 V
I
C
Emitter-base
breakdown voltage
= 0)
(I
C
Collector-emitter
(1)
saturation voltage
Base-emitter
(1)
saturation voltage
(1)
DC current gain
h
fe
Small signal current
gain
= -10 µA -5 V
I
E
I
= -150 mA IB = -15 mA -0.4 V
C
= -150 mA IB = -15 mA -1.3 V
I
C
I
= -0.1 mA V
C
= -1 mA V
I
C
= -150 mA V
I
C
IC = -500 mA V
= -20 V IC = -50 mA
V
CE
f = 100 MHz
CE
CE
CE
CE
= -10 V
= -10 V
= -10 V
= -10 V
75
100
100
50
2
300
C
CBO
t
on
t
off
1. Pulsed duration = 300 µs, duty cycle ≤ 1.5%
Output capacitance
(IE = 0)
Turn-on time
Turn-off time
V
= -10 V
CB
100 kHz ≤ f ≤ 1 MHz
= -30 V IC = -150 mA
V
CC
I
= -15 mA
B1
V
= -30 V IC = -150 mA
CC
= -I
I
B1
= -15 mA
B2
8pF
45 ns
300 ns
Doc ID 15295 Rev 2 3/8
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