ST 2N2484HR User Manual

2N2484HR

Hi-Rel NPN bipolar transistor 60 V - 50 mA

Features

Parameter	Value
BVCEO	60 V
IC (max)	50 mA
hFE at 10 V - 150 mA	> 250
Operating temperature range	- 65 °C to + 200 °C

■Linear gain characteristics

■Hermetic packages

■ESCC qualified

■European preferred part list - EPPL

	1
	2
	3
	TO-18
3	3
	4
1	1
2	2
LCC-3	LCC-3UB

Figure 1. Internal schematic diagram

Description

The 2N2484HR is a silicon planar epitaxial NPN transistor specifically designed for aerospace HiRel applications and housed in hermetic packages. It complies with the ESCC 5000 qualification standard. It is ESCC qualified according to the 5201-001 specification. In case of conflict between this datasheet and ESCC detailed specification, the latter prevails.

Pin 4 in LCC-3UB connected to the lid (for ground contact)

	Table 1.	Device summary
	Order codes		ESCC Part number	Quality Level	Packages	Lead Finish	Mass (g)	EPPL
	2N2484UB1		-	Engineering	LCC-3UB	Gold	0.06	-
				Model
	2N2484UB06		5201/001/06	ESCC Flight	LCC-3UB	Gold	0.06	-
	2N2484UB07		5201/001/07	ESCC Flight	LCC-3UB	Solder Dip	0.06	-
	SOC2484		-	Engineering	LCC-3	Gold	0.06	-
				Model
	SOC2484HRB		5201/001/01 or 02	ESCC Flight	LCC-3	Gold / Solder Dip (1)	0.06	-
	2N2484HR		5201/001/04 or 05	ESCC Flight	TO-18	Gold / Solder Dip (1)	0.40	Y
	1. Depending ESCC part number mentioned on the purchase order.
	July 2010			Doc ID 17734 Rev 1				1/12
								www.st.com

Electrical ratings	2N2484HR

1 Electrical ratings

Table 2.	Absolute maximum ratings
Symbol	Parameter		Value	Unit
VCBO	Collector-base voltage (IE = 0)		60	V
VCEO	Collector-emitter voltage (IB = 0)		60	V
VEBO	Emitter-base voltage (IC = 0)		6	V
IC	Collector current		50	mA
	Total dissipation at Tamb ≤ 25 °C
	2N2484HR		0.36	W
PTOT	2N2484UB1 / SOC2484HRB		0.36	W
	2N2484UB1 / SOC2484HRB	(1)	0.73	W
	Total dissipation at Tc ≤ 25 °C
	for 2N2484HR		1.2	W
TSTG	Storage temperature		- 65 to 200	°C
TJ	Max. operating junction temperature		200	°C

1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate.

Table 3.	Thermal data for through-hole package
Symbol	Parameter		TO-18	Unit
RthJC	Thermal resistance junction-case	max	146	°C/W
RthJA	Thermal resistance junction-ambient	max	486	°C/W

	Table 4.	Thermal data for SMD package
	Symbol	Parameter		LCC-3 / LCC-3UB	Unit
	RthJA	Thermal resistance junction-ambient	max	486	°C/W
		Thermal resistance junction-ambient (1)	max	239

1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate.

2/12	Doc ID 17734 Rev 1

2N2484HR						Electrical characteristics
2	Electrical characteristics
	Tcase = 25 °C unless otherwise specified.
Table 5.	Electrical characteristics
Symbol		Parameter		Test conditions (1)		Min.	Typ.	Max.	Unit
V(BR)CBO		Collector-base		IC = 10 µA		60	-		V
		breakdown voltage
(2)		Collector-emitter		IC = 10 mA		60	-		V
V(BR)CEO		breakdown voltage
V(BR)EBO		Emitter-base breakdown		IE = 10 µA		6	-		V
		voltage
ICBO		Collector-base cut-off		VCB = 45 V			-	10	nA
		current
ICBO		Emitter-base cut-off		VEB = 5 V			-	10	nA
		current
(2)		Collector-emitter		IC = 1 mA	IB = 0.1 mA		-	0.35	V
VCE(SAT)		saturation voltage
				IC = 1 µA	VCE = 5 V	30
(2)		DC forward current		IC = 10 µA	VCE = 5 V	100		500
hFE		transfer ratio		IC = 100 µA	VCE = 5 V	175	-	550
				IC = 1 mA	VCE = 5 V	250		650
				IC = 10 mA	VCE = 5 V			800
		High frequency current		VCE = 5 V	IC = 50 µA	3	-
		Gain 1		f = 5 MHz
hfe
		High frequency current		VCE = 5 V	IC = 500 µA	2	-
		Gain 2		f = 30 MHz
Cobo		Output capacitance		VCB = 5 V	IE = 0		-	6	pF
				f = 1 MHz
Cibo		Input capacitance		VEB = 0.5 V	IC = 0		-	6	pF
				f = 1 MHz
hFE		Small signal current gain		IC = 1 mA	VCE = 5 V	150	-	900
				f = 1 kHz
hie		Small signal input		IC = 1 mA	VCE = 5 V	3.5	-	24	kΩ
		impedance		f = 1 kHz
hoc		Small signal output		IC = 1 mA	VCE = 5 V		-	40	µmho
		impedance		f = 1 kHz
hre		Small signal reverse		I = 1 mA	V = 5 V		-	800	10-6
		voltage transfer ratio		C	CE
				f = 1 kHz
NFW		Wide-Band noise		VCE = 5 V	IC = 10 µA		-	3	dB
				RS = 10 kΩ

Doc ID 17734 Rev 1

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Electrical characteristics								2N2484HR
Table 5.	Electrical characteristics
Symbol		Parameter		Test conditions (1)		Min.	Typ.	Max.	Unit
				VCE = 5 V	IC = 10 µA
NFN1				RS = 10 kΩ	f = 100 Hz		-	3
				Power BW = 200 Hz
				VCE = 5 V	IC = 10 µA
NFN2		Spot noise figure		RS = 10 kΩ	f = 1 kHz		-	10	dB
				Power BW = 20 Hz
				VCE = 5 V	IC = 10 µA
NFN3				RS = 10 kΩ	f = 10 kHz		-	2
				Power BW = 2 Hz

1.Measurement performed on a sample basis, LTPD 7 or less.

2.Pulse measurement: Pulse width ≤ 300 µs, duty cycle ≤ 1.0 %

Table 6.	Electrical characteristics at high and low temperatures
Symbol		Parameter	Test conditions		Min.	Typ.	Max.	Unit
ICBO		Collector-base cut-off	VCB = 45 V	Tamb = 150 °C		-	10	µA
		current
hFE2		DC forward current	IC = 10 µA	VCE = 5 V	20	-
		transfer ratio	Tamb = - 55 °C

4/12	Doc ID 17734 Rev 1