2N2484HR
Hi-Rel NPN bipolar transistor 60 V - 50 mA
Features
Parameter |
Value |
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BVCEO |
60 V |
IC (max) |
50 mA |
hFE at 10 V - 150 mA |
> 250 |
Operating temperature range |
- 65 °C to + 200 °C |
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■Linear gain characteristics
■Hermetic packages
■ESCC qualified
■European preferred part list - EPPL
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1 |
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3 |
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TO-18 |
3 |
3 |
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4 |
1 |
1 |
2 |
2 |
LCC-3 |
LCC-3UB |
Description
The 2N2484HR is a silicon planar epitaxial NPN transistor specifically designed for aerospace HiRel applications and housed in hermetic packages. It complies with the ESCC 5000 qualification standard. It is ESCC qualified according to the 5201-001 specification. In case of conflict between this datasheet and ESCC detailed specification, the latter prevails.
Pin 4 in LCC-3UB connected to the lid (for ground contact)
Table 1. |
Device summary |
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Order codes |
ESCC Part number |
Quality Level |
Packages |
Lead Finish |
Mass (g) |
EPPL |
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2N2484UB1 |
- |
Engineering |
LCC-3UB |
Gold |
0.06 |
- |
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Model |
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2N2484UB06 |
5201/001/06 |
ESCC Flight |
LCC-3UB |
Gold |
0.06 |
- |
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2N2484UB07 |
5201/001/07 |
ESCC Flight |
LCC-3UB |
Solder Dip |
0.06 |
- |
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SOC2484 |
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- |
Engineering |
LCC-3 |
Gold |
0.06 |
- |
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Model |
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SOC2484HRB |
5201/001/01 or 02 |
ESCC Flight |
LCC-3 |
Gold / Solder Dip (1) |
0.06 |
- |
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2N2484HR |
5201/001/04 or 05 |
ESCC Flight |
TO-18 |
Gold / Solder Dip (1) |
0.40 |
Y |
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1. Depending ESCC part number mentioned on the purchase order. |
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July 2010 |
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Doc ID 17734 Rev 1 |
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1/12 |
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www.st.com |
Electrical ratings |
2N2484HR |
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Table 2. |
Absolute maximum ratings |
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Symbol |
Parameter |
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Value |
Unit |
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VCBO |
Collector-base voltage (IE = 0) |
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60 |
V |
VCEO |
Collector-emitter voltage (IB = 0) |
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60 |
V |
VEBO |
Emitter-base voltage (IC = 0) |
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6 |
V |
IC |
Collector current |
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50 |
mA |
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Total dissipation at Tamb ≤ 25 °C |
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2N2484HR |
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0.36 |
W |
PTOT |
2N2484UB1 / SOC2484HRB |
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0.36 |
W |
2N2484UB1 / SOC2484HRB |
(1) |
0.73 |
W |
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Total dissipation at Tc ≤ 25 °C |
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for 2N2484HR |
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1.2 |
W |
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TSTG |
Storage temperature |
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- 65 to 200 |
°C |
TJ |
Max. operating junction temperature |
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200 |
°C |
1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate.
Table 3. |
Thermal data for through-hole package |
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Symbol |
Parameter |
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TO-18 |
Unit |
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RthJC |
Thermal resistance junction-case |
max |
146 |
°C/W |
RthJA |
Thermal resistance junction-ambient |
max |
486 |
°C/W |
Table 4. |
Thermal data for SMD package |
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Symbol |
Parameter |
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LCC-3 / LCC-3UB |
Unit |
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RthJA |
Thermal resistance junction-ambient |
max |
486 |
°C/W |
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Thermal resistance junction-ambient (1) |
max |
239 |
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1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate.
2/12 |
Doc ID 17734 Rev 1 |
2N2484HR |
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Electrical characteristics |
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2 |
Electrical characteristics |
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Tcase = 25 °C unless otherwise specified. |
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Table 5. |
Electrical characteristics |
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Symbol |
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Parameter |
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Test conditions (1) |
Min. |
Typ. |
Max. |
Unit |
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V(BR)CBO |
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Collector-base |
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IC = 10 µA |
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60 |
- |
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V |
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breakdown voltage |
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(2) |
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Collector-emitter |
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IC = 10 mA |
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60 |
- |
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V |
V(BR)CEO |
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breakdown voltage |
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V(BR)EBO |
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Emitter-base breakdown |
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IE = 10 µA |
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6 |
- |
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V |
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voltage |
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ICBO |
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Collector-base cut-off |
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VCB = 45 V |
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10 |
nA |
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current |
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ICBO |
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Emitter-base cut-off |
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VEB = 5 V |
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10 |
nA |
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current |
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(2) |
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Collector-emitter |
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IC = 1 mA |
IB = 0.1 mA |
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0.35 |
V |
VCE(SAT) |
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saturation voltage |
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IC = 1 µA |
VCE = 5 V |
30 |
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(2) |
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DC forward current |
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IC = 10 µA |
VCE = 5 V |
100 |
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500 |
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hFE |
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transfer ratio |
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IC = 100 µA |
VCE = 5 V |
175 |
- |
550 |
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IC = 1 mA |
VCE = 5 V |
250 |
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650 |
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IC = 10 mA |
VCE = 5 V |
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800 |
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High frequency current |
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VCE = 5 V |
IC = 50 µA |
3 |
- |
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Gain 1 |
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f = 5 MHz |
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hfe |
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High frequency current |
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VCE = 5 V |
IC = 500 µA |
2 |
- |
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Gain 2 |
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f = 30 MHz |
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Cobo |
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Output capacitance |
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VCB = 5 V |
IE = 0 |
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6 |
pF |
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f = 1 MHz |
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Cibo |
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Input capacitance |
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VEB = 0.5 V |
IC = 0 |
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6 |
pF |
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f = 1 MHz |
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hFE |
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Small signal current gain |
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IC = 1 mA |
VCE = 5 V |
150 |
- |
900 |
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f = 1 kHz |
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hie |
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Small signal input |
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IC = 1 mA |
VCE = 5 V |
3.5 |
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24 |
kΩ |
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impedance |
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f = 1 kHz |
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hoc |
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Small signal output |
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IC = 1 mA |
VCE = 5 V |
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40 |
µmho |
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impedance |
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f = 1 kHz |
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hre |
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Small signal reverse |
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I = 1 mA |
V = 5 V |
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800 |
10-6 |
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voltage transfer ratio |
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C |
CE |
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f = 1 kHz |
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NFW |
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Wide-Band noise |
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VCE = 5 V |
IC = 10 µA |
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3 |
dB |
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RS = 10 kΩ |
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Doc ID 17734 Rev 1 |
3/12 |
Electrical characteristics |
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2N2484HR |
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Table 5. |
Electrical characteristics |
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Symbol |
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Parameter |
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Test conditions (1) |
Min. |
Typ. |
Max. |
Unit |
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VCE = 5 V |
IC = 10 µA |
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NFN1 |
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RS = 10 kΩ |
f = 100 Hz |
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3 |
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Power BW = 200 Hz |
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VCE = 5 V |
IC = 10 µA |
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NFN2 |
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Spot noise figure |
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RS = 10 kΩ |
f = 1 kHz |
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10 |
dB |
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Power BW = 20 Hz |
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VCE = 5 V |
IC = 10 µA |
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NFN3 |
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RS = 10 kΩ |
f = 10 kHz |
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2 |
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Power BW = 2 Hz |
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1.Measurement performed on a sample basis, LTPD 7 or less.
2.Pulse measurement: Pulse width ≤ 300 µs, duty cycle ≤ 1.0 %
Table 6. |
Electrical characteristics at high and low temperatures |
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Symbol |
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Parameter |
Test conditions |
Min. |
Typ. |
Max. |
Unit |
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ICBO |
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Collector-base cut-off |
VCB = 45 V |
Tamb = 150 °C |
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10 |
µA |
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current |
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hFE2 |
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DC forward current |
IC = 10 µA |
VCE = 5 V |
20 |
- |
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transfer ratio |
Tamb = - 55 °C |
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4/12 |
Doc ID 17734 Rev 1 |