ST 2N2219AHR User Manual

Hi-Rel NPN bipolar transistor 40 V - 0.8 A

Features

BV

CEO

(max) 0.8 A

I

C

H

at 10 V - 150 mA > 100

FE

Operating temperature range - 65 °C to + 200 °C

■ Hi-Rel NPN bipolar transistor

■ Linear gain characteristics

■ ESCC qualified

■ European preferred part list - EPPL

■ Radiation level: lot specific total dose contact

marketing for specified level

40 V

2N2219AHR

TO-39

Figure 1. Internal schematic diagram

Description

The 2N2219AHR is a silicon planar epitaxial NPN transistors in TO-39 package. It is specifically designed for aerospace Hi-Rel applications and ESCC qualified according to the 5201-003 specification. In case of conflict between this datasheet and ESCC detailed specification, the latter prevails.

Table 1. Device summary

Order codes Package Lead finish Marking Type EPPL Packaging

2N2219AHR TO-39

2N2219AT1 TO-39 Gold 2N2219AT1

Gold

Solder Dip

520100301 520100302

ESCC Flight Yes Strip pack

Engineering

model

Strip pack

January 2010 Doc ID 15294 Rev 2 1/8

www.st.com

8

Electrical ratings 2N2219AHR

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

V

P

T

Collector-base voltage (IE = 0) 75 V

CBO

Collector-emitter voltage (IB = 0) 40 V

CEO

Emitter-base voltage (IC = 0) 6 V

EBO

I

Collector current 0.8 A

C

Total dissipation at T

TOT

Total dissipation at T

Storage temperature -65 to 200 °C

STG

Max. operating junction temperature 200 °C

T

J

≤ 25°C

amb

≤ 25°C

c

0.8 3

Table 3. Thermal data

Symbol Parameter Value Unit

R R

Thermal resistance junction-case __ max

thJC

Thermal resistance junction-ambient __ max

thJA

58

218

°C/W °C/W

W W

2/8 Doc ID 15294 Rev 2

2N2219AHR Electrical characteristics

2 Electrical characteristics

T

= 25 °C unless otherwise specified.

case

Table 4. Electrical characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

CBO

I

EBO

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

V

CE(sat)

V

BE(sat)

h

FE

Collector cut-off current (I

= 0)

E

Emitter cut-off current (IC = 0)

= 60 V

V

CB

V

= 60 V T

CB

V

= 3 V 10 nA

EB

= 150 °C

amb

10 10

nA µA

Collector-base breakdown voltage

= 0)

(I

E

= 10 µA 75 V

I

C

Collector-emitter

(1)

breakdown voltage

= 0)

(I

B

= 10 mA 40 V

I

C

Emitter-base breakdown voltage

= 0)

(I

C

Collector-emitter

(1)

saturation voltage

Base-emitter

(1)

saturation voltage

(1)

DC current gain

h

fe

Small signal current gain

= 10 µA 6 V

I

E

= 150 mA IB = 15 mA

I

C

= 500 mA IB = 50 mA

I

C

I

= 150 mA IB = 15 mA 1.2 V

C

I

= 10 mA V

C

IC = 150 mA V

= 500 mA V

I

C

= 10 mA V

I

C

= -55 °C

T

amb

= 20 V IC = 20 mA

V

CE

f = 100 MHz

CE

= 10 V = 10 V = 10 V = 10 V

75

100

40

35

2.5

0.3 1

300

V V

C

CBO

t

on

t

off

1. Pulsed duration = 300 µs, duty cycle ≤ 2%

Output capacitance (IE = 0)

Turn-on time

Turn-off time

V

= 10 V

CB

100 kHz ≤ f ≤ 1 MHz

V

= 30 V IC = 150 mA

CC

I

= 15 mA

B1

V

= 30 V IC = 150 mA

CC

I

= -I

B1

= 15 mA

B2

8pF

35 ns

300 ns

Doc ID 15294 Rev 2 3/8