ST 1N6640U User Manual

Features

1N6640U

Aerospace 0.3 A - 75 V switching diode

■ Surface mount hermetic package

■ High thermal conductivity materials

■ Very small conduction losses

■ Negligible switching losses

■ Extremely fast switching

■ Low forward voltage drop

■ Target radiation qualification:

A

LCC-2D

K

– 150 krad (Si) low dose rate – 3 Mrad high dose rate

■ Package weight: 0.12 g

Description

Packaged in LCC-2D this device is intended for use in low voltage, high frequency inverters, free wheeling, polarity protection and other aerospace applications.

Table 1. Device summary

Order code

1N6640UD1 -

1N6640U02D 5101/027/xx Flight part Target

1. Contact ST sales office for information about the specific conditions for products in die form and gold plated version.

ESCC detailed

specification

(1)

Quality level EPPL I

Engineering

model

V

F(AV)

-

0.3 A 75 V 175 °C 1.2 V

RRM

T

j(max)

V

F (max)

September 2011 Doc ID 16971 Rev 2 1/7

www.st.com

7

Characteristics 1N6640U

1 Characteristics

Table 2. Absolute ratings (limiting values)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

T

stg

T

sol

1. For all variants at Tc ≥ +155 °C per diode, derate linearly to 0A at +175 °C.

2. Maximum duration 5 s. The same package must not be re-soldered until 3 minutes have elapsed.

Repetitive peak reverse voltage 75 V

Forward rms current 0.5 A

Average forward rectified current

Forward surge current

Storage temperature range -65 to +175 °C

Operating junction temperature range -65 to +175 °C

j

Maximum soldering temperature

(1)

(2)

t

= 8.3 ms sinusoidal,

p

≤ 25 °C

t

amb

300 mA

2A

245 °C

Table 3. Thermal resistance

Symbol Parameter Value Unit

Junction to case

R

th (j-c)

R

Junction to ambient 280

th (j-a)

1. Package mounted on infinite heatsink.

Table 4. Static electrical characteristics

Symbol Parameter Tests conditions Min. Typ. Max. Unit

(1)

V

BR

IR

V

F

1. Pulse test: tp = 10 ms, δ < 2%

2. Pulse test: tp = 680 µs, δ < 2%

Breakdown voltage Tj = 25 °C IR = 10 µA 75 - - V

(1)

Reverse current

(2)

Forward voltage

(1)

60

= 25 °C

T

j

= 150 °C - - 30 µA

T

j

= 25 °C IF = 1 mA 540 - 630

T

j

T

= 25 °C IF = 50 mA 760 - 890

j

= 25 °C IF = 100 mA 820 - 980

T

j

= 25 °C IF = 200 mA 870 - 1100

T

j

= -55 °C IF = 200 mA - - 1200

T

j

V

R

= 50 V

- - 40 nA

°C/W

mV

To evaluate the conduction losses use the following equation:

P = 0.74 x I

2/7 Doc ID 16971 Rev 2

F(AV)

+ 1.00 x I

F2(RMS )

1N6640U Characteristics

)

Table 5. Dynamic characteristics

Symbol Parameter

IF = IR = 10 mA - - 9

t

V

t

FR

C

Reverse recovery time

rr

Forward recovery voltage IFM = 200 mA - - 5 V

FP

= 1 A, Vr = 30 V, dI/dt = -15 A/µs - - 20

I

F

Forward recovery time IFM = 200 mA - - 20 ns

Diode capacitance VR = 0 V, V = 50 mV, F = 1 MHz - - 3 pF

j

Figure 1. Forward voltage drop versus

forward current (typical values)

I(A

FM

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

Tj=150 °CTj=150 °C

Tj=25 °CTj=25 °C

Tj=-55 °C

V (V)

FM

Test conditions

Min. Typ. Max. Unit

Figure 2. Forward voltage drop versus

forward current (maximum values)

I (A)

FM

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

Tj=150 °CTj=150 °C

Tj=25 °CTj=25 °C

Tj=-55 °C

V (V)

FM

ns

Doc ID 16971 Rev 2 3/7