ST 1N6263 User Manual
® |
1N6263 |
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching.
Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range.
DO-35
ABSOLUTE RATINGS (limiting values)
Symbol |
Parameter |
|
Value |
Unit |
|
|
|
|
|
VRRM |
Repetitive Peak Reverse Voltage |
|
60 |
V |
IF |
Forward Continuous Current* |
Ta = 25°C |
15 |
mA |
IFSM |
Surge non Repetitive Forward Current* |
tp ≤ 1s |
50 |
mA |
Tstg |
Storage and Junction Temperature Range |
|
- 65 to 200 |
°C |
Tj |
|
|
- 65 to 200 |
|
TL |
Maximum Lead Temperature for Soldering during 10s at 4mm |
230 |
°C |
|
|
from Case |
|
|
|
|
|
|
|
|
THERMAL RESISTANCE
Symbol |
Test Conditions |
Value |
Unit |
Rth(j-a) |
Junction-ambient* |
400 |
°C/W |
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol |
|
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
VBR |
Tamb = 25°C |
I R = 10μA |
60 |
|
|
V |
VF * * |
Tamb = 25°C |
IF = 1mA |
|
|
0.41 |
V |
|
Tamb = 25°C |
IF = 15mA |
|
|
1 |
|
IR * * |
Tamb = 25°C |
VR = 50V |
|
|
0.2 |
μA |
|
|
|
|
|
|
|
DYNAMIC CHARACTERISTICS
Symbol |
|
Test Conditions |
|
Min. |
Typ. |
Max. |
Unit |
C |
Tamb = 25°C |
V R = 0V |
f = 1MHz |
|
|
2.2 |
pF |
τ |
Tamb = 25°C |
IF = 5mA |
Krakauer Method |
|
|
100 |
ps |
*On infinite heatsink with 4mm lead length
**Pulse test: tp ≤ 300μs δ < 2%.
Matched batches available on request. Test conditions (forward voltage and/or capacitance) according to customer specification.
October 2001 - Ed: 1B |
1/3 |
1N6263
Fig. 1: Forward current versus forward voltage (typical values).
Fig. 3: Reverse current versus ambient temperature.
Fig. 2: Capacitance C versus reverse applied voltage VR (typical values).
Fig. 4: Reverse current versus continuous reverse voltage (typical values).
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