ST 1N582x User Manual
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1N582x |
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LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCTS CHARACTERISTICS |
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IF(AV) |
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3 A |
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VRRM |
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40 V |
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Tj |
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150°C |
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VF (max) |
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0.475 V |
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FEATURES AND BENEFITS |
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VERY SMALL CONDUCTION LOSSES |
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NEGLIGIBLE SWITCHING LOSSES |
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EXTREMELY FAST SWITCHING |
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LOW FORWARD VOLTAGE DROP |
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AVALANCHE CAPABILITY SPECIFIED |
DO-201AD |
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DESCRIPTION
Axial Power Schottky rectifier suited for Switch Mode Power Supplies and high frequency DC to DC converters. Packaged in DO-201AD these devices are intended for use in low voltage, high frequency inverters, free wheeling, polarity protection and small battery chargers.
ABSOLUTE RATINGS (limiting values)
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Parameter |
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Value |
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Unit |
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1N5820 |
1N5821 |
1N5822 |
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VRRM |
Repetitive peak reverse voltage |
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20 |
30 |
40 |
V |
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IF(RMS) |
RMS forward current |
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10 |
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A |
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IF(AV) |
Average forward current |
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TL = 100°C |
δ = 0.5 |
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3 |
A |
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TL = 110°C |
δ = 0.5 |
3 |
3 |
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A |
IFSM |
Surge non repetitive forward |
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tp = 10 ms |
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80 |
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A |
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current |
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Sinusoidal |
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PARM |
Repetitive peak avalanche |
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tp = 1µs Tj = 25°C |
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1700 |
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W |
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power |
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Tstg |
Storage temperature range |
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- 65 to + 150 |
°C |
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Tj |
Maximum operating junction temperature * |
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150 |
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°C |
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dV/dt |
Critical rate of rise of reverse voltage |
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10000 |
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V/µs |
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* : |
dPtot |
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1 |
thermal runaway condition for a diode on its own heatsink |
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dTj |
Rth( j − a) |
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July 2003 - Ed: 3A |
1/5 |
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1N582x
THERMAL RESISTANCES
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Parameter |
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Value |
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Rth (j-a) |
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Junction to ambient |
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Lead length = 10 mm |
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80 |
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°C/W |
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Rth (j-l) |
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Junction to lead |
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Lead length = 10 mm |
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25 |
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°C/W |
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STATIC ELECTRICAL CHARACTERISTICS |
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Symbol |
Parameter |
Tests Conditions |
1N5820 |
1N5821 |
1N5822 |
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IR * |
Reverse leakage |
Tj = 25°C |
VR = VRRM |
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2 |
2 |
mA |
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current |
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Tj = 100°C |
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20 |
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mA |
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VF * |
Forward voltage drop |
Tj = 25°C |
IF = 3 A |
0.475 |
0.5 |
0.525 |
V |
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Tj = 25°C |
IF = 9.4 A |
0.85 |
0.9 |
0.95 |
V |
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Pulse test : |
* tp = 380 µs, δ < 2% |
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To evaluate the conduction losses use the following equations :
P = 0.33 x IF(AV) + 0.035 IF2(RMS ) for 1N5820 / 1N5821
P = 0.33 x IF(AV) + 0.060 IF2(RMS ) for 1N5822
Fig. 1: Average forward power dissipation versus average forward current (1N5820/1N5821).
Fig. 2: Average forward power dissipation versus average forward current (1N5822).
PF(av)(W) |
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1.8 |
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1.6 |
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δ = 0.1 |
δ = 0.2 |
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δ = 0.5 |
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δ = 0.05 |
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1.4 |
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δ = 1 |
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1.2 |
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1.0 |
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0.8 |
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0.6 |
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T |
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0.4 |
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0.2 |
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IF(av) (A) |
δ=tp/T |
tp |
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0.0 |
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0.5 |
1.0 |
1.5 |
2.0 |
2.5 |
3.0 |
3.5 |
4.0 |
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0.0 |
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Fig. 3: Normalized avalanche power derating |
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versus pulse duration. |
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PARM(tp) |
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PARM(1µs) |
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1 |
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0.1 |
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0.01 |
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0.001 |
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tp(µs) |
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0.01 |
0.1 |
1 |
10 |
100 |
1000 |
2/5 |
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PF(av)(W) |
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2.0 |
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δ = 0.1 |
δ = 0.2 |
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1.8 |
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δ = 0.5 |
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1.6 |
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δ = 0.05 |
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1.4 |
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1.2 |
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δ = 1 |
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1.0 |
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0.8 |
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0.6 |
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T |
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0.4 |
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0.2 |
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IF(av) (A) |
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δ=tp/T |
tp |
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0.0 |
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0.5 |
1.0 |
1.5 |
2.0 |
2.5 |
3.0 |
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0.0 |
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Fig. 4: Normalized avalanche power derating versus junction temperature.
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PARM(tp) |
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PARM(25°C) |
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1.2 |
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1 |
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0.8 |
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0.6 |
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0.4 |
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0.2 |
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0 |
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Tj(°C) |
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0 |
25 |
50 |
75 |
100 |
125 |
150 |
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