ST 1N5817, 1N5818, 1N5819 User Manual

1N5817, 1N5818, 1N5819

Low drop power Schottky rectifier

Features

■Very small conduction losses

■Negligible switching losses

■Extremely fast switching

■Low forward voltage drop

■Avalanche capability specified

Description

Axial Power Schottky rectifier suited for Switch Mode Power Supplies and high frequency DC to DC converters. Packaged in DO-41 these devices are intended for use in low voltage, high frequency inverters, free wheeling, polarity protection and small battery chargers.

			A
		K
			DO-41
Table 1.	Device summary
Symbol			Value	Unit
IF(AV)			1	A
VRRM			40	V
Tj			150	°C
VF (max)			0.45	V

July 2011

Doc ID 6262 Rev 5

1/7

www.st.com

Characteristics

1N5817, 1N5818, 1N5819

1

Characteristics

Table 2.

Absolute ratings (limiting values)

Symbol

Parameter

Value

Unit

1N5817

1N5818

1N5819

VRRM

Repetitive peak reverse voltage

20

30

40

V

IF(RMS)

Forward rms current

10

A

IF(AV)

Average forward

TL = 125 °C, δ = 0.5

1

A

current

IFSM

Surge non repetitive

tp = 10 ms Sinusoidal

25

A

forward current

PARM

Repetitive peak

tp = 1 µs, Tj

= 25 °C

1200

1200

900

W

avalanche power

Tstg

Storage temperature range

-65 to + 150

°C

Tj

Maximum operating junction temperature(1)

150

°C

dV/dt

Critical rate of rise of reverse voltage

10000

V/µs

1.

dPtot <

1

condition to avoid thermal runaway for a diode on its own heatsink.

Rth(j-a)

dTj

Table 3.

Thermal resistances

Symbol

Parameter

Value

Unit

Rth (j-a)

Junction to ambient

Lead length = 10 mm

100

°C/W

Rth (j-l)

Junction to lead

Lead length = 10 mm

45

°C/W

Table 4.

Static electrical characteristics

Symbol

Parameter

Tests conditions

1N5817

1N5818

1N5819

Unit

IR (1)

Reverse leakage

Tj = 25 °C

VR = VRRM

0.5

0.5

0.5

mA

current

Tj = 100 °C

10

10

10

mA

VF (1)

Forward voltage drop

Tj = 25 °C

IF = 1 A

0.45

0.50

0.55

V

Tj = 25 °C

IF = 3 A

0.75

0.80

0.85

V

1.

Pulse test : tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equations :

P = 0.3 x I

F(AV)

+ 0.090 I

2

for 1N5817 / 1N5818

F (RMS )

P = 0.3 x I

F(AV)

+ 0.150 I

2

for 1N5819

F (RMS )

2/7	Doc ID 6262 Rev 5

1N5817, 1N5818, 1N5819	Characteristics

Figure 1. Average forward power dissipation versus average forward current (1N5817/1N5818)

Figure 2. Average forward power dissipation versus average forward current (1N5819)

	PF(av)(W)													PF(av)(W)
	0.6													0.7
	0.5					= 0.1		= 0.2		= 0.5				0.6					= 0.1		= 0.2			= 0.5
																= 0.05
				= 0.05										0.5
	0.4
												= 1													= 1
														0.4
	0.3
														0.3
	0.2											T		0.2										T
	0.1													0.1
						IF(av) (A)				=tp/T		tp							IF(av) (A)				=tp/T		tp
	0.0													0.0
		0.1	0.2	0.3	0.4	0.5	0.6	0.7	0.8	0.9	1.0	1.1	1.2		0.1	0.2	0.3	0.4	0.5	0.6	0.7	0.8	0.9	1.0	1.1	1.2
	0.0													0.0

Figure 3. Average forward current versus	Figure 4. Average forward current versus
ambient temperature	ambient temperature
(δ = 0.5) (1N5817/1N5818)	(δ = 0.5) (1N5819)

IF(av)(A)							IF(av)(A)
1.2							1.2
1.0			Rth(j-a)=Rth(j-l)=45°C/W				1.0			Rth(j-a)=Rth(j-l)=45°C/W
0.8			Rth(j-a)=100°C/W				0.8			Rth(j-a)=100°C/W
0.6							0.6
0.4	T						0.4	T
0.2							0.2
=tp/T	tp		Tamb(°C)				=tp/T	tp		Tamb(°C)
0.0	25	50	75	100	125	150	0.0	25	50	75	100	125	150
0							0

Figure 5. Normalized avalanche power	Figure 6. Normalized avalanche power
derating versus pulse duration	derating versus junction
	temperature

PARM(tp)							PARM(Tj)
PARM(1 µs)						PARM(25 °C)
1						1.2
						1
0.1						0.8
						0.6
0.01						0.4
						0.2
0.001			tp(µs)						Tj(°C)
						0
0.01	0.1	1	10	100	1000	25	50	75	100	125	150

Doc ID 6262 Rev 5

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