ST 1N5811U User Manual
1N5811U
Aerospace 6 A fast recovery rectifier
Features
■ Aerospace applications
■ Surface mount hermetic package
■ High thermal conductivity materials
■ Very small conduction losses
■ Negligible switching losses
■ Extremely fast switching
■ Low forward voltage drop
■ Package mass: 0.18 g
■ Target radiation qualification
– 150 krad (Si) low dose rate
– 3 Mrad (Si) high dose rate
■ ESCC qualified
Table 1. Device summary
(1)
A
A
K
K
LCC2B
Description
This power ultrafast recovery rectifier is designed
and packaged to comply with the ESCC5000
specification for aerospace products. It is housed
in a surface mount hermetically sealed LCC2B
package whose footprint is 100% compatible with
industry standard solutions in D5B.
The 1N5811U is suitable for switching mode
power supplies and high frequency DC to DC
converters such as low voltage high frequency
inverter, free wheeling or polarity protection .
Order code
1N5811UB1 -
1N5811U01B 5101/013/11 Flight part Gold plated Y
ESCC detailed
specification
Quality level Lead finish EPPL I
Engineering
model
Gold plated -
F(AV)
V
RRM
T
j(max)VF (max)
6 A 150 V 175 °C 0.995 V
1N5811U02B 5101/013/12 Flight part Solder dip Y
1. Contact ST sales office for information about the specific conditions for products in die form and QML-Q versions.
March 2010 Doc ID 16005 Rev 2 1/7
www.st.com
7
Characteristics 1N5811U
1 Characteristics
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
stg
T
T
sol
1. Maximum duration 5 s. The same package must not be resoldered until 3 minutes have elapsed.
Repetitive peak reverse voltage 150 V
Forward rms current 10 A
Average forward rectified current Tc = 135 °C, δ = 0.5 6 A
t
= 8.3 ms sinusoidal 105
Forward surge current
Storage temperature range -65 to + 175 °C
Maximum operating junction temperature 175 °C
j
Maximum soldering temperature
(1)
p
= 10 ms sinusoidal 100
t
p
A
245 °C
Table 3. Thermal resistance
Symbol Parameter Value Unit
(1)
R
th (j-c)
1. Package mounted on infinite heatsink
Table 4. Static electrical characteristics
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
V
F
1. Pulse test : tp = 5 ms, δ < 2%
2. Pulse test : tp = 680 µs, δ < 2%
Junction to case 6.5 °C/W
(1)
Reverse current
(2)
Forward voltage
Tj = 25 °C
T
= 125 °C - - 30
j
= 25 °C
T
j
T
= -65 °C - - 10
j
= 25 °C IF = 3 A - - 865
T
j
T
= 25 °C
j
Tj = 125 °C - - 800
= -65 °C - - 1075
T
j
= 25 °C IF = 6 A - - 955
T
j
V
= 150 V
R
V
= 160 V
R
= 4 A
I
F
--2
--10
--900
µA
µA
mV
To evaluate the conduction losses use the following equation:
P = 0.68 x I
2/7 Doc ID 16005 Rev 2
F(AV)
+ 0.03 I
F2(RMS )
1N5811U Characteristics
0.00.20
0.60.8
0
Table 5. Dynamic characteristics
Symbol Parameter
IF = IR = 1 A, IRR = 0.1 A, dI/dt = -100 A/µs, (min) 30
t
Reverse recovery time
RR
V
Forward recovery voltage IFM = 500 mA 2.2 V
FP
t
Forward recovery time IFM = 500 mA, VFR = 1.1 x V
FR
Diode capacitance VR = 10 V, F = 1 MHz 60 pF
C
j
= 1 A, Vr = 30 V, dI/dt = -50 A/µs, 35
I
F
Figure 1. Forward voltage drop versus
forward current (typical values)
IFM(A)
20
18
16
14
12
10
8
6
4
2
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Tj=125 °CTj=125 °C
Tj=25 °CTj=25 °C
Tj=-65 °C
VFM(V)
Test conditions
Min. Typ Max. Unit
F
Figure 2. Forward voltage drop versus
forward current (maximum values)
IFM(A)
20
18
16
14
12
10
8
6
4
2
0
Tj=125 °CTj=125 °C
Tj=25 °CTj=25 °C
.4
1.
ns
15 ns
Tj=-65 °C
VFM(V)
1.2 1.4
Figure 3. Reverse leakage current versus
reverse voltage applied
(typical values)
IR(µA)
1.E+01
T
=125
j
1.E+00
1.E-01
1.E-02
1.E-03
0 20 40 60 80 100 120 140 160
Tj=75 °C
T
= 25°°CC
j
VR(V)
Figure 4. Relative variation of thermal
impedance, junction to case,
versus pulse duration
Z
th(j-c)/Rth(j-c)
1.0
LCC2B
0.9
0.8
0.7
0.6
0.5
0.4
Single pulse
0.3
0.2
0.1
0.0
1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
tP(s)
Doc ID 16005 Rev 2 3/7
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