
®
1N5711
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
Metaltosiliconjunctiondiodefeaturinghigh breakdown, low turn-on voltage and ultrafast switching.
Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic
range. Matched batches are available on request
DO-35
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
V
RRM
I
P
T
T
T
F
tot
stg
Repetitive Peak Reverse Voltage 70 V
Forward Continuous Current* Ta= 25°C 15 mA
Power Dissipation*
T
a
= 25°C
430 mW
Storage and Junction Temperature Range - 65 to 200
j
Maximum Lead Temperature for Soldering during 10s at 4mm
L
- 65 to 200
230
from Case
°C
°C
THERMAL RESISTANCE
Symbol Test Conditions Value Unit
R
th(j-a)
Junction-ambient* 400 °C/W
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
V
BR
* *
V
F
* *
I
R
T
= 25°C IR= 10µA
amb
T
= 25°CI
amb
= 25°CI
T
amb
T
= 25°CV
amb
= 1mA
F
= 15mA
F
= 50V
R
70 V
0.41 V
1
0.2
DYNAMIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
CT
τ
* On infinite heatsink with 4mm lead length
** Pulse test: t
Matched batches available on request. Test conditions (forward voltage and/or capacitance) according to customer specification.
p
= 25°C VR= 0V f = 1MHz 2 pF
amb
T
= 25°CI
amb
≤ 300µs δ<2%.
= 5mA Krakauer Method
F
100 ps
µA
October 2001 - Ed: 1B
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1N5711
Fig. 1: Forward current versus forward voltage at
low level (typical values).
Fig. 2: Capacitance C versus reverse applied
voltage V
(typical values).
R
Fig. 3: Reverse current versus ambient temperature.
Fig. 4: Reverse current versus continuous reverse
voltage (typical values).
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PACKAGE MECHANICAL DATA
DO-35
1N5711
REF. DIMENSIONS
CA
O
/
O
/
D
Cooling method : by convection and conduction
Marking: clear, ring at cathode end.
Weight: 0.15g
D
C
/
BO
Millimeters Inches
Min. Max. Min. Max.
A 3.05 4.50 0.120 0.177
B 1.53 2.00 0.060 0.079
C 28.00 1.102
D 0.458 0.558 0.018 0.022
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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© 2001 STMicroelectronics - Printed in Italy - All rights reserved.
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