ST 1N5711 User Manual
®
1N5711
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
Metaltosiliconjunctiondiodefeaturinghigh breakdown, low turn-on voltage and ultrafast switching.
Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic
range. Matched batches are available on request
DO-35
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
V
RRM
I
P
T
T
T
F
tot
stg
Repetitive Peak Reverse Voltage 70 V
Forward Continuous Current* Ta= 25°C 15 mA
Power Dissipation*
T
a
= 25°C
430 mW
Storage and Junction Temperature Range - 65 to 200
j
Maximum Lead Temperature for Soldering during 10s at 4mm
L
- 65 to 200
230
from Case
°C
°C
THERMAL RESISTANCE
Symbol Test Conditions Value Unit
R
th(j-a)
Junction-ambient* 400 °C/W
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
V
BR
* *
V
F
* *
I
R
T
= 25°C IR= 10µA
amb
T
= 25°CI
amb
= 25°CI
T
amb
T
= 25°CV
amb
= 1mA
F
= 15mA
F
= 50V
R
70 V
0.41 V
1
0.2
DYNAMIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
CT
τ
* On infinite heatsink with 4mm lead length
** Pulse test: t
Matched batches available on request. Test conditions (forward voltage and/or capacitance) according to customer specification.
p
= 25°C VR= 0V f = 1MHz 2 pF
amb
T
= 25°CI
amb
≤ 300µs δ<2%.
= 5mA Krakauer Method
F
100 ps
µA
October 2001 - Ed: 1B
1/3
1N5711
Fig. 1: Forward current versus forward voltage at
low level (typical values).
Fig. 2: Capacitance C versus reverse applied
voltage V
(typical values).
R
Fig. 3: Reverse current versus ambient temperature.
Fig. 4: Reverse current versus continuous reverse
voltage (typical values).
2/3
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