Sony SLD322XT Datasheet

0.5W High Power Laser Diode

Description

The SLD322XT is a high power, gain-guided laser diode produced
by MOCVD method∗1. Compared to the SLD300 Series, this laser
diode has a high brightness output with a doubled optical density

which can be achived by QW-SCH structure∗2.
Fine adjustment of the oscillation wavelength is possible by controlling
the temperature using the built-in TE cooler (Peltier element).

∗1

MOCVD: Metal Organic Chemical Vapor Deposition

∗2

QW-SCH: Quantum Well Separate Confinement Heterostructure

Features

• High power

Recommended optical power output: Po = 0.5W

• Low operating current: Iop = 0.75A (Po = 0.5W)

• Flat package with built-in photodiode, TE cooler, and thermistor

Applications

• Solid state laser excitation

• Medical use

• Material processes

• Measurement

Structure

AlGaAs quantum well structure laser diode

Operating Lifetime

MTTF 10,000H (effective value) at Po = 0.5W, Tth = 25°C

Absolute Maximum Ratings (Tth = 25°C)

• Optical power output Po 0.55 W

• Reverse voltage VR LD 2 V

PD 15 V

• Operating temperature (Tth) Topr –10 to +30 °C

• Storage temperature Tstg –40 to +85 °C

– 1 –

E93206B02-PS

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

SLD322XT

12

T

H LD

TE Cooler

PD

PN

34 56 78

18

Equivalent Circuit

No.

1
2
3
4
5
6
7
8

Function
TE cooler (negative)
Thermistor lead 1
Thermistor lead 2
Laser diode (anode)
Laser diode (cathode)
Photodiode (cathode)
Photodiode (anode)
TE cooler (positive)

Pin Configuration (Top View)

Warranty

This warranty period shall be 90 days after receipt of the product or
1,000 hours operation time whichever is shorter.
Sony Quality Assurance Department shall analyze any product that
fails during said warranty period, and if the analysis results show
that the product failed due to material or manufacturing defects on
the part of Sony, the product shall be replaced free of charge.
Laser diodes naturally have differing lifetimes which follow a Weibull
distribution.
Special warranties are also available.

– 2 –

SLD322XT

Electrical and Optical Characteristics (Tth: Thermistor temperature, Tth = 25°C)

Handling Precautions

Eye protection against laser beams
The optical output of laser diodes ranges from
several mW to 3W. However the optical power
density of the laser beam at the diode chip
reaches 1MW/cm2. Unlike gas lasers, since
laser diode beams are divergent, uncollimated
laser diode beams are fairly safe at a laser
diode. For observing laser beams, ALWAYS use
safety goggles that block infrared rays. Usage of
IR scopes, IR cameras and fluorescent plates is
also recommended for monitoring laser beams
safely.

Item

Symbol

Conditions

Min.

Typ. Max. Unit
Ith
Iop
Vop
λp

Imon

θ⊥
θ//

∆X, ∆Y
∆φ⊥

ηD

Rth

Threshold current
Operating current
Operating voltage
Wavelength

∗

Monitor current

Radiation angle

Positional accuracy

Differential efficiency
Thermistor resistance

PO = 0.5W
PO = 0.5W
PO = 0.5W
PO = 0.5W

VR = 10V

PO = 0.5W

PO = 0.5W

PO = 0.5W
Tth = 25°C

790

0.15
20

4

0.5

0.18

0.75

2.1

0.8
30

9

0.9
10

0.3

1.2

3.0

840

3.0
40

17

±100

±3

A
A
V

nm
mA

degree
degree

µm

degree

W/A

kΩ

Perpendicular
Parallel
Position
Angle

∗

Wavelength Selection Classification

Type
SLD322XT-1
SLD322XT-2
SLD322XT-3

Wavelength (nm)

795 ± 5
810 ± 10
830 ± 10

Type
SLD322XT-21
SLD322XT-24
SLD322XT-25

Wavelength (nm)

798 ± 3
807 ± 3
810 ± 3

APC

ATC

Safety goggles for
protection from
laser beam

IR fluorescent plate

Optical
material

Optical power output control device
temperature control device

Lens

Laser diode

Optical boad

– 3 –

SLD322XT

Example of Representative Characteristics

Optical power output vs. Forward current characteristics

IF – Forward current [mA]

0 200 400 600 800 1000

200

400

600

800

1000

Po – Optical power output [mW]

Tth = –10°C

Tth = 0°C Tth = 25°C

Tth = 30°C

Optical power output vs. Monitor current characteristics

Imon – Monitor current [mA]

0 0.5 1.0

0

250

500

Po – Optical power output [mW]

Tth = –10°C

Tth = 0°C

Tth = 25°C

Tth = 30°C

Threshold current vs. Temperature characteristics

Tth – Thermistor temperature [°C]

–10 0 10 20 30

100

500

1000

Ith – Threshold current [mA]

Temperature dependence of far field pattern

(Parallel to junction)

Angle [degree]

–90 –60 –30 0 30 60 90

Radiation intensity (optional scale)

PO = 500mW

Tth = –5°C

Tth = 10°C

Tth = 25°C

Power dependence of far field pattern

(Parallel to junction)

Angle [degree]

–90 –60 –30 0 30 60 90

Radiation intensity (optional scale)

Tth = 25°C

PO = 500mW
PO = 400mW

PO = 300mW
PO = 200mW
PO = 100mW

Power dependence of far field pattern

(Perpendicular to junction)

Angle [degree]

–90 –60 –30 0 30 60 90

Radiation intensity (optional scale)

Tth = 25°C

PO = 500mW
P

O = 400mW

P

O = 300mW

PO = 200mW
P

O = 100mW