Sony SLD322V Datasheet
High Power Density 0.5W Laser Diode
Description
The SLD322V is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the
SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be
achieved by QW-SCH structure∗2.
∗1
MOCVD: Metal Organic Chemical Vapor Deposition
∗2
QW-SCH: Quantum Well Separate Confinement Heterostructure
Features
• High power
Recommended optical power output: Po = 0.5W
• Low operating current: Iop = 0.75A (Po = 0.5W)
Applications
• Solid state laser excitation
• Medical use
• Material processes
• Measurement
Structure
GaAlAs quantum well structure laser diode
Absolute Maximum Ratings (Tc = 25°C)
• Optical power output Po 0.55 W
• Reverse voltage VR LD 2 V
PD 15 V
• Operating temperature (Tc) Topr –10 to +30 °C
• Storage temperature Tstg –40 to +85 °C
Pin Configuration
– 1 –
E93205A81-PS
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
SLD322V
2
Bottom View
1. LD cathode
2. PD anode
3. COMMON
1
3
– 2 –
SLD322V
Electrical and Optical Characteristics (Tc: Case temperature, Tc = 25°C)
Handling Precautions
Eye protection against laser beams
The optical output of laser diodes ranges from
several mW to 3W. However the optical power
density of the laser beam at the diode chip
reaches 1MW/cm2. Unlike gas lasers, since
laser diode beams are divergent, uncollimated
laser diode beams are fairly safe at a laser
diode. For observing laser beams, ALWAYS use
safety goggles that block infrared rays. Usage of
IR scopes, IR cameras and fluorescent plates is
also recommended for monitoring laser beams
safely.
∗1
Wavelength Selection Classification
Type
SLD322V-1
SLD322V-2
SLD322V-3
Wavelength (nm)
795 ± 5
810 ± 10
830 ± 10
Type
SLD322V-21
SLD322V-24
SLD322V-25
Wavelength (nm)
798 ± 3
807 ± 3
810 ± 3
APC
ATC
Safety goggles for
protection from
laser beam
IR fluorescent plate
Optical
material
Optical power output control device
temperature control device
Lens
Laser diode
Optical boad
Item
Symbol
Conditions
Min.
Typ. Max. Unit
Ith
Iop
Vop
λp
Imon
θ⊥
θ//
∆X, ∆Y
∆φ⊥
ηD
Threshold current
Operating current
Operating voltage
Wavelength
∗
1
Monitor current
Radiation angle
(F. W. H. M.∗)
Positional accuracy
Differential efficiency
PO = 0.5W
PO = 0.5W
PO = 0.5W
PO = 0.5W
VR = 10V
PO = 0.5W
PO = 0.5W
PO = 0.5W
790
0.15
20
4
0.5
0.18
0.75
2.1
0.8
30
9
0.9
0.3
1.2
3.0
840
3.0
40
17
±50
±3
A
A
V
nm
mA
degree
degree
µm
degree
W/A
Perpendicular
Parallel
Position
Angle
∗
F. W. H. M. : Full Width at Half Maximum
– 3 –
SLD322V
Example of Representative Characteristics
Optical power output vs. Forward current characteristics
IF – Forward current [mA]
0 200 400 600 800 1000
200
400
600
800
1000
Po – Optical power output [mW]
TC = –10°C
TC = 0°C TC = 25°C
TC = 30°C
Optical power output vs. Monitor current characteristics
Imon – Monitor current [mA]
0 0.5 1.0
0
250
500
Po – Optical power output [mW]
TC = –10°C
TC = 0°C
TC = 25°C
TC = 30°C
Threshold current vs. Temperature characteristics
Tc – Case temperature [°C]
–10 0 10 20 30
100
500
1000
Ith – Threshold current [mA]
Temperature dependence of far field pattern
(Parallel to junction)
Angle [degree]
–90 –60 –30 0 30 60 90
Radiation intensity (optional scale)
PO = 500mW
TC = –5°C
TC = 10°C
TC = 25°C
Power dependence of far field pattern (Parallel to junction)
Angle [degree]
–90 –60 –30 0 30 60 90
Radiation intensity (optional scale)
TC = 25°C
PO = 500mW
PO = 400mW
PO = 300mW
PO = 200mW
PO = 100mW
Power dependence of far field pattern
(Perpendicular to junction)
Angle [degree]
–90 –60 –30 0 30 60 90
Radiation intensity (optional scale)
TC = 25°C
PO = 500mW
P
O = 400mW
P
O = 300mW
PO = 200mW
P
O = 100mW
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