Sony SLD304B Datasheet

Block-type 1000mW High Power Laser Diode

Description

The SLD304B is a high power laser diode mounted on a 3 × 3 × 5mm Copper block.
It is ideal for applications which require a minimal distance between the laser facet and external optical parts.

Features

• Compact size 3 × 3 × 5mm block

• High power output Po = 1000mW

• Hole for thermistor

Applications

• Solid state laser excitation

• Medical use

Structure

GaAlAs double hetero-type laser diode

Absolute Maximum Ratings (Tc = 15°C)

• Optical power output Po 1000 mW

• Recommended optical power output Po 900 mW

• Reverse voltage VR LD 2 V

• Operating temperature Topr –10 to +30 °C

• Storage temperature Tstg –40 to +85 °C

Pin Configuration

– 1 –

E89106A81-PS

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

SLD304B

No.

1
2

Function
LD cathode
LD anode

2 LD anode

1 LD cathode

– 2 –

SLD304B

Electrical and Optical Characteristics (Tc = 15°C)

Item Symbol Conditions Min. Typ. Max. Unit
Threshold current
Operating current
Operating voltage
Wavelength

Radiation angle
(F. W. H. M.∗)

Positional
accuracy

Differential efficiency

Ith
Iop
Vop

λp
θ⊥
θ//

∆X
∆Y, ∆Z
∆φ⊥

ηD

PO = 900mW
PO = 900mW
PO = 900mW

PO = 900mW

PO = 900mW

PO = 900mW

770

0.5

450

1400

2.1

28
13

0.8

700

2000

3.0

840

40

17
±300
±100

±3

mA
mA

V

nm

degree

µm

degree

mW/mA

Perpendicular to junction
Parallel to junction

Position

Angle

∗

F. W. H. M. : Full Width at Half Maximum

– 3 –

SLD304B

Example of Representative Characteristics

Threshold current vs. Temperature characteristics

Tc – Case temperature [°C]

–10 0 2010 30

100

1000

500

Ith – Threshold current [mA]

Optical power output vs. Forward current

IF – Forward current [mA]

0 500 1000 1500 2000

0

500

1000

PO – Optical power output [mW]

Tc = –10°C

Tc = 0°C

Tc = 25°C

Tc = 15°C

Tc = 30°C

780

810

830

800

790

820

λp – Oscillation wavelength [nm]

Oscillation wavelength vs. Temperature characteristics

Tc – Case temperature [°C]

–10 0 10 20 30 40

PO = 900mW

0

0.5

1.0

ηD – Differential efficiency [mW/mA]

Differential efficiency vs. Temperature characteristics

Tc – Case temperature [°C]

–10 0 10 20 30 40

Power dependence of far field pattern

Angle [degree]

–30 –20 –10 0 10 20 30

Radiation intensity (optional scale)

Tc = 15°C

PO = 900mW

P

O = 500mW

P

O = 200mW

PO = 50mW

Power dependence of near field pattern

200µm

Radiation intensity (optional scale)

Tc = 15°C

PO = 600mW
PO = 400mW
PO = 200mW

PO = 900mW
PO = 800mW

(Parallel to junction)