Sony SLD302V Datasheet

200mW High Power Laser Diode

Description

The SLD302V is a gain-guided, high-power laser diodes fabricated by MOCVD.
MOCVD: Metal Organic Chemical Vapor Deposition

Features

• High power

Recommended power output Po = 180mW

• Low operating current

Applications

• Solid state laser excitation

• Medical use

Structure

GaAlAs double-hetero-type laser diode

Absolute Maximum Ratings (Tc = 25°C)

• Optical power output Po 200 mW

• Reverse voltage VR LD 2 V

PD 15 V

• Operating temperature Topr –10 to +50 °C

• Storage temperature Tstg –40 to +85 °C

Pin Configuration

– 1 –

E88060B81-PS

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

SLD302V

2

Bottom View

1. LD cathode

2. PD anode

3. COMMON

1

3

– 2 –

SLD302V

Electrical and Optical Characteristics (Tc: Case temperature, Tc = 25°C)

Handling Precautions

Eye protection against laser beams
The optical output of laser diodes ranges from
several mW to 1W. However the optical power
density of the laser beam at the diode chip
reaches 1mW/cm2. Unlike gas lasers, since
laser diode beams are divergent, uncollimated
laser diode beams are fairly safe at a laser
diode. For observing laser beams, ALWAYS use
safety goggles that block infrared rays. Usage of
IR scopes, IR cameras and fluorescent plates is
also recommended for monitoring laser beams
safely.

∗1

Wavelength Selection Classification

Type
SLD302V-1
SLD302V-2
SLD302V-3

Wavelength (nm)

785 ± 15
810 ± 10
830 ± 10

Type

SLD302V-21
SLD302V-24
SLD302V-25

Wavelength (nm)

798 ± 3
807 ± 3
810 ± 3

APC

ATC

Safety goggles for
protection from
laser beam

IR fluorescent plate

Optical
material

Optical power output control device
temperature control device

Lens

Laser diode

Optical boad

Item

Symbol

Conditions

Min.

Typ. Max. Unit
Ith
Iop
Vop
λp

Imon

θ⊥
θ//

∆X, ∆Y
∆φ⊥

ηD

Threshold current
Operating current
Operating voltage
Wavelength

∗

1

Monitor current

Radiation angle
(F. W. H. M.∗)

Positional accuracy

Differential efficiency

PO = 180mW
PO = 180mW
PO = 180mW
PO = 180mW

VR = 10V

PO = 180mW

PO = 180mW

PO = 180mW

770

0.65

150
350

1.9

0.3
28

12

0.9

200
500

3.0

840

40
17

±50

±3

mA
mA

V

nm

mA

degree
degree

µm

degree

mW/mA

Perpendicular
Parallel
Position
Angle

∗

F. W. H. M. : Full Width at Half Maximum

– 3 –

SLD302V

Example of Representative Characteristics

Optical power output vs.
Forward current characteristics

IF – Forward current [mA]

Po – Optical power output [mW]

Optical power output vs. Monitor current characteristics

Imon – Monitor current [mA]

Po – Optical power output [mW]

Threshold current vs. Temperature characteristics

Tc – Case temperature [°C]

Ith – Threshold current [mA]

Power dependence of far field pattern

(parallel to junction)

Angle [degree]

Radiation intensity (optional scale)

Power depecdence of near field pattern

Radiation intensity (optional scale)

Oscillation wavelength vs. Temperature characteristics

Tc – Case temperature [°C]

λp – Oscillation wavelength [nm]

0 250 500

0

100

200

TC = 0°C

TC = 25°C

TC = 50°C

0 0.1 0.2

0

100

200

TC = –10°C

TC = 0°C

TC = 25°C

TC = 50°C

–10 0 10 20 30 40 50

100

500

1000

–30 –20 –10 0 10 20 30

TC = 25°C

PO = 180mW

PO = 90mW

PO = 30mW

50µm

TC = 25°C

PO = 180mW
P

O = 150mW

PO = 100mW
P

O = 75mW

PO = 50mW
PO = 25mW

–10 0 10 20 30 40 50

780

790

830

820

810

800

PO = 180mW

TC = –10°C