Sony SLD302B Datasheet
Block-type 200mW High Power Laser Diode
Description
The SLD302B is a high power laser diode mounted on a 3 × 3 × 5mm Copper block.
It is ideal for applications which require a minimal distance between the laser facet and external optical parts.
Features
• Compact size 3 × 3 × 5mm block
• High power output Po = 200mW
• Hole for thermistor
Applications
• Solid state laser excitation
• Medical use
Structure
GaAlAs double hetero-type laser diode
Absolute Maximum Ratings (Tc = 25°C)
• Optical power output Po 200 mW
• Recommended optical power output Po 180 mW
• Reverse voltage VR LD 2 V
• Operating temperature Topr –10 to +50 °C
• Storage temperature Tstg –40 to +85 °C
Pin Configuration
– 1 –
E89104A81-PS
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any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
SLD302B
No.
1
2
Function
LD cathode
LD anode
2 LD anode
1 LD cathode
– 2 –
SLD302B
Electrical and Optical Characteristics (Tc = 25°C)
Item Symbol Conditions Min. Typ. Max. Unit
Threshold current
Operating current
Operating voltage
Wavelength
Radiation angle
(F. W. H. M.∗)
Positional
accuracy
Differential efficiency
Ith
Iop
Vop
λp
θ⊥
θ//
∆X
∆Y, ∆Z
∆φ⊥
ηD
PO = 180mW
PO = 180mW
PO = 180mW
PO = 180mW
PO = 180mW
PO = 180mW
770
0.5
150
400
1.9
28
12
0.8
200
500
3.0
840
40
17
±300
±100
±3
mA
mA
V
nm
degree
µm
degree
mW/mA
Perpendicular to junction
Parallel to junction
Position
Angle
∗
F. W. H. M. : Full Width at Half Maximum
– 3 –
SLD302B
Optical power output vs. Forward current
IF – Forward current [mA]
Po – Optical power output [mW]
0 250 500
0
100
200
Tc = 0°C
Tc = 25°C
Tc = 50°C
Threshold current vs. Temperature characteristics
Tc – Case temperature [°C]
Ith – Threshold current [mA]
–10 0 10 20 30 40 50
100
500
1000
Power dependence of far field pattern
Angle [degree]
Radiation intensity (optional scale)
–30 –20 –10 0 10 20 30
Tc = 25°C
PO = 180mW
PO = 90mW
PO = 30mW
Power depecdence of near field pattern
Radiation intensity (optional scale)
50µm
Tc = 25°C
PO = 180mW
P
O = 150mW
PO = 100mW
P
O = 75mW
PO = 50mW
PO = 25mW
Oscillation wavelength vs. Temperature characteristics
Tc – Case temperature [°C]
λp – Oscillation wavelength [nm]
–10 0 10 20 30 40 50
780
790
830
820
810
800
PO = 180mW
Tc = –10°C
Differential efficiency vs. Temperature characteristics
Tc – Case temperature [°C]
–10 0 5040302010
0
0.5
1.0
1.5
ηD – Differential efficiency [mW/mA]
(parallel to junction)
Example of Representative Characteristics
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