Sony SLD237VL Datasheet
SLD237VL
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Index-Guided High Power AlGaAs Laser Diode
Description
The SLD237VL is a high-power , index-guided AlGaAs
laser diode.
Features
• High power
• Low current consumption
• Small astigmatism
• Small package (φ5.6mm)
Applications
Optical pickup for CD-R/RW
Structure
AlGaAs quantum well structured laser diode
M-274
Recommended Operating Optical Power Output 80mW
Absolute Maximum Ratings
• Optical power output Pomax 90 mW (CW)
130 mW (Pulse)
Pulse width 200ns or less
Duty 50% or less
• Reverse voltage VR LD 2 V
• Operating temperature Topr –10 to +70 °C
• Storage temperature Tstg –40 to +85 °C
Connection Diagram Pin Configuration
COMMON
3
LD
1
(Pulse Operation)
2
3
Bottom View
1
1. LD anode
2. N.C.
3. COMMON
Sony reserves the right to change products and specifications without prior notice. This information does not convery any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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E00852B19-PS
SLD237VL
Optical and Electrical Characteristics (Tc = 25°C) Tc: Case temperature
Item
Threshold current
Operating current
Operating voltage
Wavelength
Differential efficiency
Radiation
angle
Paralell
Perpendicular
Astigmatism
Positional
Angle
accuracy
Position
Symbol
Ith
Iop
Vop
λp
ηD
θ//
θ⊥
As
∆φ//
∆φ⊥
∆X, ∆Y, ∆Z
Conditions
CW
CW, Po = 80mW
CW, Po = 80mW
CW, Po = 80mW
CW, Po = 80mW
CW, Po = 80mW
CW, Po = 80mW
CW, Po = 80mW
CW, Po = 80mW
CW, Po = 80mW
Min.
25
90
—
779
0.7
7.4
15.0
–6
—
—
—
Typ.
30
110
2.0
784
1.0
8.3
18.0
—
—
—
—
Max.
40
130
2.3
789
1.3
9.5
21.0
0
±1.6
±2.5
±80
Unit
mA
mA
V
nm
mW/mA
deg
deg
µm
deg
deg
µm
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