Sony SLD234VL Datasheet

Index-Guided High Power AlGaAs Laser Diode

Description

The SLD234VL is a high power index-guided AlGaAs

laser diode.

Features

• High power

• Low power consumption

• Low astigmatism

• Small package (φ5.6mm)

Applications

Pickups for optical discs

Structure

• AlGaAs quantum well-structured laser diode

• PIN photodiode for optical power output monitor

Recommended Operating Optical Power Output

50mW

Absolute Maximum Ratings (Tc = 25°C)

• Optical power output PO 50 mW (CW)

80 mW (Pulse)

Pulse period of 1µs or less
Duty of 50% or less

• Reverse voltage VR LD 2 V
PD 15 V

• Operating temperature Topr –10 to +60 °C

• Storage temperature Tstg –40 to +85 °C

Connection Diagram

– 1 –

E97941A99-PS

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

SLD234VL

M-260

COMMON

LDPD

3

21

Pin Configuration

21

3

Bottom View

1. LD ANODE

2. PD ANODE

3. COMMON

– 2 –

SLD234VL

Optical and Electrical Characteristics (Tc = 25°C) Tc: Case temperature

Item Symbol Conditions Min. Typ.

Max. Unit
Threshold current
Operating current
Operating voltage
Oscillation wavelength
Differential efficiency

Radiation
angle

Astigmatism
Monitor current

Positional
accuracy

Ith
Iop
Vop

λp
ηD
θ//
θ⊥

As
Im

∆φ//
∆φ⊥
∆X, ∆Y, ∆Z

CW
CW, PO = 50mW
CW, PO = 50mW
CW, PO = 50mW
CW, PO = 50mW
CW, PO = 50mW
CW, PO = 50mW
CW, PO = 50mW
CW, PO = 50mW,

VR (PIN) = 5V
CW, PO = 50mW
CW, PO = 50mW

15
60
—

775

0.8
7

19
—

—
—

—
—

20
70

2.0

785

1.0

8.5
22
—

0.05
—

—
—

30
85

2.5

795

1.3
10
27
–6

—

±2.0
±3.0

±80

mA
mA

V

nm

mW/mA

degree
degree

µm
mA

degree
degree

µm

Parallel
Perpendicular

Angle

Position