Sony SLD233VL Datasheet

Index-Guided High Power AlGaAs Laser Diode

Description

The SLD233VL is a high power index-guided AlGaAs

laser diode.

Features

• Low noise

• Low power consumption

Applications

Pickups for MiniDisc recording/playback

Structure

• AlGaAs quantum well-structure laser diode

• PIN photodiode for optical power output monitor

Recommended Operating Optical Power Output

30mW

Absolute Maximum Ratings (Tc = 25°C)

• Optical power output PO 35 mW

• Reverse voltage VR LD 2 V

PD 15 V

• Operating temperature Topr –10 to +60 °C

• Storage temperature Tstg –40 to +85 °C

Connection Diagram

– 1 –

E97940-PS

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

SLD233VL

M-274

COMMON

LDPD

3

21

Pin Configuration

21

3

Bottom View

1. LD ANODE

2. PD ANODE

3. COMMON

– 2 –

SLD233VL

Optical and Electrical Characteristics (Tc = 25°C) Tc: Case temperature

Item Symbol Conditions Min. Typ.

Max. Unit
Threshold current
Operating current
Operating voltage
Oscillation wavelength

Radiation
angle

Positional
accuracy

Differential efficiency
Astigmatism
Coherence

Ith
Iop
Vop

λ
θ⊥
θ//

∆X, ∆Y, ∆Z
∆φ⊥
∆φ//

ηD
As

γ

PO = 35mW
PO = 35mW
PO = 35mW

PO = 35mW

PO = 35mW

PO = 30mW

PO = 4mW

780

26

7.4

0.55

30
70

2.0

790

28.5

8.5

0.9

–16

0.7

40
85

2.5

800

32

10.0
±80

±3
±2

1.2

0.9

mA
mA

V

nm
degree
degree

µm
degree
degree

mW/mA

µm

Perpendicular
Parallel
Position

Angle