High-Power Density 1W Laser Diode
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Description
The SLD1324ZT is a gain-guided, high-power
laser diode with 1W red visible output. The flat
package with built-in TE cooler is adopted and fine
tuning of wavelength is possible by controlling the
laser chip temperature.
Features
• High power
Recommended optical power output :1.0W
• Emitting line width :200µm
• Flat package with built-in photodiode,
TE cooler and thermistor
Equivalent Circuit
SLD1324ZT
M-272
T.E. Cooler
Applications
• Medical use
• Solid state laser excitation
Structure
AlGaInP quantum well structure laser diode
Absolute Maximum Ratings (Tth = 25°C)
• Optical power output PO 1.1 W
• Reverse voltage VRLD 2 V
PD 15 V
• Operating temperature (Tth) Topr –10 to +30 °C
• Storage temperature Tstg –40 to +85 °C
• Operating current of TE cooler IT 4.0 A
Pin Configuration (Top View)
No. Function No. Function
1
T. E. Cooler (negative)
2
T. E. Cooler (negative)
7
LD (cathode)
8
LD (cathode)
1 2 3 4 5 6 7 8 9 10 11 12
TH LD PD
3
Thermister
4
Thermister
5
LD (anode)
6
LD (anode)
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
9
PD (cathode)
10
PD (anode)
11
T. E. Cooler (positive)
12
T. E. Cooler (positive)
112
– 1 –
E94724-PP
SLD1324ZT
Optical and Electrical Characteristics (Tth = Thermistor temperature, Tth = 25°C)
Item Symbol Conditions Min. Typ. Max. Unit
Threshold current
Operating current
Operating voltage
Wavelength
Monitor current
Radiation angle
(F.W.H.M)
Positional accuracy
Differential efficiency
Thermistor resistance
Marking
411
Perpendicular
Parallel
Position
Angle
Production factory
Ith
Iop
Vop
λ
Imon
θ⊥
θ//
∆X, ∆Y
∆φ⊥
ηD
Rth
PO = 1.0W
PO = 1.0W
PO = 1.0W
PO = 1.0W, VR = 10V
PO = 1.0W
PO = 1.0W
PO = 1.0W
PO = 1.0W
PO = 1.0W
Tth = 25°C
685
0.15
15
4
0.3
0.9
2.1
2.2
695
1.2
24
11
0.9
10
1.5
3.0
3.0
705
3.0
35
15
±100
±3
1.5
A
A
V
nm
mA
degree
degree
µm
degree
W/A
kΩ
Lot No.
∗
Categories are not specified by marking.
Handling Precautions
Eye protection against laser beams
The optical output of laser diodes ranges from
several mW to 3W. However the optical power
density of the laser beam at the diode chip
reaches 1MW/cm2.
Unlike gas lasers, since laser diode beams are
divergent, uncollimated laser diode beams are
fairly safe at a laser diode. For observing laser
beams, ALWAYS use safety goggles that block
infrared rays. Usage of IR scopes, IR cameras
and fluorescent plates is also recommended for
monitoring laser beams safely.
Laser diode
Safety goggles for protection from laser beam
Lens
Optical
material
IR fluorescent plate
Optical board
Optical power output control device
Temperature control device
– 2 –
Optical power output vs. Forward current characteristics
Optical power output vs. Monitor current characteristics
1.2
1.0
0.8
0.6
Tth = 3025 15 0 –10°C
Imon
–10
IF
SLD1324ZT
Threshold current vs. Temperature characteristics
1.5
1
0.4
Po-Optical power output [W]
0.2
0
0 0.5 1.0 1.5 2.0
IF Forward current [A]
0 0.5 1.0 1.5 2.0
Imon-Monitor Current [mA]
Slope efficiency vs. Temperature
1
0.5
ηD Slope efficiency [W/A]
characteristics
Tth = 30°C
Ith-Threshold current [mA]
0.5
–10 0 10 20 30
Tth-Thermistor temperature [°C]
Temperature dependence of
700
690
680
λp-Wavelength [nm]
670
wavelength
O = 1W
P
0
–10 0 10 20 30
Tth-Thermistor temperature [°C]
Power dependence of far field pattern
(Perpendicular to junction)
Relative radiant intensity
–60 –40 –20 0 60
Angle [degree]
Tth = 25°C
PO = 1.0W
4020
0.8W
0.6W
0.4W
0.2W
– 3 –
660
–10 0 10 20
Tth-Thermistor temperature [°C]
Power dependence of far field pattern
(Parallel to junction)
Relative radiant intensity
–60 –40 –20 0
Angle [degree]
Tth = 25°C
PO = 1.0W
0.8W
0.6W
0.4W
0.2W
4020
30
60