Sony SLD1324ZT Datasheet

High-Power Density 1W Laser Diode
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Description
The SLD1324ZT is a gain-guided, high-power laser diode with 1W red visible output. The flat package with built-in TE cooler is adopted and fine tuning of wavelength is possible by controlling the laser chip temperature.
Features
High power
Emitting line width :200µm
Flat package with built-in photodiode,
TE cooler and thermistor
Equivalent Circuit
SLD1324ZT
M-272
T.E. Cooler
Applications
Medical use
Solid state laser excitation
Structure
AlGaInP quantum well structure laser diode
Absolute Maximum Ratings (Tth = 25°C)
Optical power output PO 1.1 W
Reverse voltage VRLD 2 V
PD 15 V
Operating temperature (Tth) Topr –10 to +30 °C
Storage temperature Tstg –40 to +85 °C
Operating current of TE cooler IT 4.0 A
Pin Configuration (Top View)
No. Function No. Function
1
T. E. Cooler (negative)
2
T. E. Cooler (negative)
7
LD (cathode)
8
LD (cathode)
1 2 3 4 5 6 7 8 9 10 11 12
TH LD PD
3
Thermister
4
Thermister
5
LD (anode)
6
LD (anode)
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
9
PD (cathode)
10
PD (anode)
11
T. E. Cooler (positive)
12
T. E. Cooler (positive)
112
– 1 –
E94724-PP
SLD1324ZT
Optical and Electrical Characteristics (Tth = Thermistor temperature, Tth = 25°C)
Item Symbol Conditions Min. Typ. Max. Unit Threshold current Operating current Operating voltage Wavelength Monitor current
Radiation angle (F.W.H.M)
Positional accuracy
Differential efficiency Thermistor resistance
Marking
411
Perpendicular Parallel Position Angle
Production factory
Ith Iop Vop
λ
Imon
θ⊥ θ//
X, Yφ⊥
ηD Rth
PO = 1.0W PO = 1.0W PO = 1.0W PO = 1.0W, VR = 10V PO = 1.0W PO = 1.0W PO = 1.0W PO = 1.0W PO = 1.0W Tth = 25°C
685
0.15 15
4
0.3
0.9
2.1
2.2
695
1.2 24 11
0.9 10
1.5
3.0
3.0
705
3.0 35 15
±100
±3
1.5
A A
V nm mA
degree degree
µm
degree
W/A
k
Lot No.
Categories are not specified by marking.
Handling Precautions
Eye protection against laser beams The optical output of laser diodes ranges from several mW to 3W. However the optical power density of the laser beam at the diode chip reaches 1MW/cm2.
Unlike gas lasers, since laser diode beams are divergent, uncollimated laser diode beams are fairly safe at a laser diode. For observing laser beams, ALWAYS use safety goggles that block infrared rays. Usage of IR scopes, IR cameras and fluorescent plates is also recommended for monitoring laser beams safely.
Laser diode
Safety goggles for protection from laser beam
Lens
Optical material
IR fluorescent plate
Optical board
Optical power output control device Temperature control device
– 2 –
Optical power output vs. Forward current characteristics
Optical power output vs. Monitor current characteristics
1.2
1.0
0.8
0.6
Tth = 3025 15 0 –10°C
Imon
–10
IF
SLD1324ZT
Threshold current vs. Temperature characteristics
1.5
1
0.4
Po-Optical power output [W]
0.2
0
0 0.5 1.0 1.5 2.0
IF Forward current [A]
0 0.5 1.0 1.5 2.0
Imon-Monitor Current [mA]
Slope efficiency vs. Temperature
1
0.5
ηD Slope efficiency [W/A]
characteristics
Tth = 30°C
Ith-Threshold current [mA]
0.5 –10 0 10 20 30
Tth-Thermistor temperature [°C]
Temperature dependence of
700
690
680
λp-Wavelength [nm]
670
wavelength
O = 1W
P
0
–10 0 10 20 30
Tth-Thermistor temperature [°C]
Power dependence of far field pattern
(Perpendicular to junction)
Relative radiant intensity
–60 –40 –20 0 60
Angle [degree]
Tth = 25°C
PO = 1.0W
4020
0.8W
0.6W
0.4W
0.2W
– 3 –
660
–10 0 10 20
Tth-Thermistor temperature [°C]
Power dependence of far field pattern
(Parallel to junction)
Relative radiant intensity
–60 –40 –20 0
Angle [degree]
Tth = 25°C
PO = 1.0W
0.8W
0.6W
0.4W
0.2W 4020
30
60
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