Sony SLD131UL Datasheet
GaAlAs Laser Diode
SLD131UL
Description
The SLD131UL is a low-power consumption and
low-noise laser diode developed for portable CDs.
Features
• Low current consumption IOP: 20mA (PO = 2.5mW)
• Supports single power supply.
• Low noise
Applications
• Portable CDs
Structure
• GaAlAs double hetero laser diode
• PIN photodiode to monitor laser beam output
Absolute Maximum Ratings (Tc = 25°C)
• Optical power output PO 4mW
•Reverse voltage VR LD 2 V
PD 15 V
• Operating temperature Topr –10 to +60 °C
• Storage temperature Tstg –40 to +85 °C
M-259
Connection Diagram Pin Configuration
COMMON
3
PD
2
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
LD
1
21
3
1. LD anode
2. PD anode
3. COMMON
Bottom View
– 1 –
E94615-PK
SLD131UL
Electrical and Optical Characteristics (TC = 25°C) TC : Case temperature
Item
Threshold current
Symbol
Ith
Conditions
Min.
Typ.
16
Max.
28
Unit
mA
Operating current
Operating voltage
Wavelength
Monitor current
Perpendicular
Rediation
angle
Parallel
Asymmetry
Positional
accuracy
Position
Angle
Differential efficiency
Astigmatism
Dark current of PD
capacitance of PD
Iop
Vop
λp
Im
θ⊥
θ//
∗
∆SR
∆
X, ∆Y, ∆Z
∆φ⊥
ηD
AS
ID
CT
Po = 2.5mW
Po = 2.5mW
Po = 2.5mW
Po = 2.5mW
VR = 5V
Po = 2.5mW
Po = 2.5mW
Po = 2.5mW
| Z // –Z⊥ |
VR = 5V
VR = 5V, f = 1kHz
Power
1.7
760
0.08
20
8
0.2
20
1.9
790
0.11
39
13
0.6
30
2.5
810
0.6
45
25
25
±150
±4
0.9
15
150
30
mA
V
nm
mA
degree
degree
%
µm
degree
mW/mA
µm
nA
pF
∗
∆S
L SR
S
–7° 7°
0°
θ//
R =
SL – SR
SL + SR
– 2 –
Example of Representative Characteristics
SLD131UL
Optical power output vs. Forward current characteristics
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
– Optical power output [mV]
O
P
1.0
0.5
0.0
0 5 10 15 20 25 30 35
0 0.1 0.2 0.3
Tc = 10°C
IF – Forward current [mA]
Tc = 10°C
60°C
20°C
30°C
40°C
50°C
60°C
IF [mA]
Imon [mA]
Threshold current vs. Temperature characteristics
100
80
60
Far field pattern (FFP)
Po = 2.5mW, Tc = 25°C
θ⊥
Relative radiant intensity
θ//
–40 –30 –20 –10 0 10 20 30 40
Angle [ ° ]
Differential efficiency vs. Temperature characteristics
1.0
Po = 2.5mW
0.8
40
20
Ith – Threshold current [mA]
10
–20
0
20 40 60 80
Tc – Case temperature [°C]
PIN diode voltage and current characteristics
0.25
Current [mA]
Po = 2.5mW, Tc = 25°C
0
0.6
0.4
– Differential efficiency [mW/mA]
0.2
D
η
0.0
–20
0
20 40 60 80
Tc – Case temperature [°C]
Monitor current vs. Temperature characteristics
1.0
0.8
0.6
0.4
0.2
Im – Monitor current [mA]
Po = 2.5mW
–0.25
–1.0 0.0 1.0
Voltage [V]
0.1
–20 0 20 40 60 80
Tc – Case temperature [°C]
– 3 –
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