Sony SLD105VL Datasheet

GaAlAs Laser Diode

Description

The SLD105VL is a low current consumption

GaAlAs laser diode developed for CD.

Features

• Low current consumption

• Small package (φ 5.6 mm)

Applications

• Pickup for portable CD

Structure

• GaAlAs double hetero structured laser diode

• Pin photodiode for optical power output monitor

Recommended Operating Optical Power Output

2.5 mW

SLD105VL

M-260

Absolute Maximum Ratings (Ta=25 °C)

• Optical power output PO 5mV

•Reverse voltage VR LD 2 V

PD 15 V

• Operating temperature
Topr –10 to +60 °C

• Storage temperature
Tstg –40 to +85 °C

Connection Diagram Pin Configuration

COMMON

3

PD

2

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any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

LD

1

21

3

1. LD anode

2. PD anode

3. COMMON

Bottom View

—1—

E96Y22-TE

SLD105VL

Optical and Electrical Characteristics (TC=25 °C) TC : Case temperature

Item
Threshold current
Operating current
Operating voltage
Oscillation wavelength

Monitor current

Radiation
angle

Perpendicular
Parallel

Symmetry of θ //
Positional Position
accuracy Angle
Differential efficiency
Astigmatism

S/N ratio

PD dark current
PD capacitance between pins

Symbol

Ith

Iop

Vop

λp
Im

θ ⊥
θ //

∆SR∗

∆X, ∆Y, ∆Z

∆ ⊥

ηD

AS

S/N

ID

CT

Conditions

PO=2.5 mW
PO=2.5 mW
PO=2.5 mW
PO=2.5 mW

VR=0 V

PO=2.5 mW

PO=2.5 mW
PO=2.5 mW

Z //–Z⊥

fc=720 kHz

∆f=30 kHz

PO=2.5 mW

VR=5 V

VR=5 V, f=1 kHz

Min.

1.7

760

0.08
20

8

0.2

–30

Typ.

30
35

1.9

790

0.15
39

12

0.6

–25

85

Max.

41
44

2.5

810

0.4
45

21
30

±150

±3

0.7

–20

150

30

Unit

mA
mA

V

nm
mA

degree
degree

%

µm

degree

mW/mA

µm

nA
pF

∗∆ SR

Power

S

L SR

–7° 0° 7°

θ ||

∆ S

R =

| SL – SR |

SL + SR

—2—

Example of Representative Characteristics

SLD105VL

Optical power output vs. Forward current characteristics

7

6

5

4

3

2

-Optical power output (mW)

O

P

1

0

010203040
0 0.1 0.2 0.3 0.4 0.5

Threshold current vs. Temperature characteristics

100

90
80

70
60

50
40

Tc=10°C 20°C 30°C 40°C 50°C 60°C

Tc=10°C 60°C

50

I

F-Forward current (mA)

IF (mA)
Imon (mA)

Far field pattern (FFP)

PO=3mW, Tc=25°C

θ⊥

Relative radiant intensity

–30 0 30

Angle (degree)

Differential efficiency vs. Temperature characteristics

1.0

0.8

0.6

θ //

PO=3mW

30

20

Ith-Threshold current (mA)

10

–20 0

Tc-Case temperature (°C)

PIN diode voltage current characteristics

0.25
PO=3mW, Tc=25°C

0

Current (mA)

20 40 60 80

0.4

0.2

ηD-Differential efficiency (mW/mA)

0

Monitor current vs. Temperature characteristics

1.000

0.800

0.600

0.500

0.400

0.300

0.200

Im-Monitor current (mA)

20 40 60 80–20 0

Tc-Case temperature (°C)

PO=3mW

–0.25

Voltage (V)

1.0–1.0 0

0.100
–20 0

20 40 60 80

Tc-Case temperature (°C)

—3—