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SGM2014AN
GaAs N-channel Dual Gate MES FET
Description
The SGM2014AN is an N-channel dual gate GaAs
MES FET for UHF band low-noise amplification.
This FET is suitable for a wide range of applications
including TV tuners, cellular radios, and DBS IF
amplifiers.
Features
• Ultra small package
• Low voltage operation
• Low noise: NF = 1.5dB (typ.) at 900MHz
• High gain: Ga = 18dB (typ.) at 900MHz
• Low cross-modulation
• High stability
• Built-in gate-protection diode
Application
UHF band amplifier, mixer and oscillator
Preliminary
M-281
Structure
GaAs N-channel dual-gate metal semiconductor field-effect transistor
Absolute Maximum Ratings (Ta = 25°C)
• Drain to source voltage VDSX 12 V
• Gate 1 to source voltage VG1S –5 V
• Gate 2 to source voltage VG2S –5 V
• Drain current ID 55 mA
• Allowable power dissipation PD 100 mW
• Channel temperature Tch 125 °C
• Storage temperature Tstg –55 to +150 °C
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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PE97938-PS
Page 2
SGM2014AN
Electrical Characteristics (Ta = 25°C)
Item
Drain cut-off current
Gate 1 to source current
Gate 2 to source current
Drain saturation current
Gate 1 to source cut-off voltage
Gate 2 to source cut-off voltage
Forward transfer admittance
Input capacitance
Feedback capacitance
Noise figure
Associated gain
Symbol Condition Min. Typ. Max. unit
VDS = 12V
IDSX
VG1S = –4V
50
VG2S = 0V
VG1S = –4.5V
IG1SS
VG2S = 0V
–8
VDS = 0V
VG2S = –4.5V
IG2SS
VG1S = 0V
–8
VDS = 0V
VDS = 5V
IDSS
VG1S = 0V
8
28
VG2S = 0V
VDS = 5V
VG1S (OFF)
ID = 100µA
–2.5
VG2S = 0V
VDS = 5V
VG2S (OFF)
ID = 100µA
–2.5
VG1S = 0V
VDS = 5V
gm
ID = 10mA
VG2S =1.5V
13
17
f = 1kHz
Ciss
Crss
NF
Ga
VDS = 5V
ID = 10mA
VG2S = 1.5V
f = 1MHz
VDS = 5V
ID = 10mA
VG2S = 1.5V
f = 900MHz
15
0.9
25
1.5
18
2
50
2.5
µA
µA
µA
mA
V
V
ms
pF
fF
dB
dB
Typical Characteristics (Ta = 25°C)
ID vs. VDS
40
(VG2S = 1.5V)
30
20
– Drain current [mA]
D
I
10
0
0123456
V
DS – Drain to source voltage [V]
VG1S
= 0V
–0.3V
–0.6V
–0.9V
–1.2V
–1.5V
– 2 –
ID vs. VG1S
25
(VDS = 5V)
20
15
10
– Drain current [mA]
D
I
5
0
–2.0 –1.5 –1.0 –0.5 0
V
G1S – Gate 1 to source voltage [V]
V
G2S
= 1.5V
1.0V
0.5V
0V
–0.5V
–1.0V
–1.5V
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SGM2014AN
ID vs. VG2S
25
(VDS = 5V)
20
15
10
– Drain current [mA]
D
I
5
0
–2.0 –1.5 –1.0 –0.5 0
V
G2S – Gate 2 to source voltage [V]
NF vs. VG1S
6
(VDS = 5V, f = 900MHz)
5
VG2S = 0.5V
G1S
V
= 0V
–0.2V
–0.4V
–0.6V
–0.8V
–1.0V
–1.2V
–1.4V
gm vs. VG1S
25
(VDS = 5V)
20
15
10
5
gm – Forward transfer admittance [ms]
0
–2.0 –1.5 –1.0 –0.5 0
V
G1S – Gate 1 to source voltage [V]
Ga vs. VG1S
25
(VDS = 5V, f = 900MHz)
20
VG2S = 1.5V
V
G2S
= 1.5V
1.0V
0.5V
0V
–0.5V
–1.0V
4
3
2
NF – Noise figure [dB]
1
0
–1.6 –1.2 –0.8 –0.4
–1.8 –1.4 –1.0 –0.6 –0.2 0 0.2
V
G1S – Gate 1 to source voltage [V]
NF, Ga vs. ID
3.0
(VDS = 5V, VG2S = 1.5V, f = 900MHz)
2.5
2.0
1.5
1.0
NF – Noise figure [dB]
0.5
Ga
NF
1.0V
1.5V
30
25
20
15
10
5
Ga – Gain [dB]
Ga – Gain [dB]
NFmin – Minimum noise figure [dB]
15
1.0V
10
0.5V
5
0
–1.8 –1.4 –1.0 –0.6 –0.2 0 0.2
–1.6 –1.2 –0.8 –0.4
V
G1S – Gate 1 to source voltage [V]
NF, Ga vs. f
3.0
2.5
2.0
1.5
1.0
0.5
(VDS = 5V, VG2S = 1.5V, ID = 10mA)
Ga
NFmin
30
25
20
15
10
5
Ga – Gain [dB]
0
2 6 10 14
0 4 8 12 16 20 22
I
D – Drain current [mA]
18
0
0
0.4 1.2 2.0
0 0.8 1.6 2.2
0.6 1.40.2 1.0 1.8
0
f – Frequency [GHz]
– 3 –
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SGM2014AN
S-parameter vs. Frequency Characteristics (VDS = 5V, VG2S = 1.5V, ID = 10mA) (Z0 = 50Ω)
f
(MHz)
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
S11
MAG ANG
0.999
0.997
0.991
0.981
0.968
0.956
0.944
0.929
0.917
0.898
0.877
0.855
0.831
0.809
0.785
0.762
0.737
0.721
0.685
0.655
–2.8
–5.9
–9.0
–12.3
–15.5
–18.9
–21.8
–24.7
–27.4
–30.4
–32.8
–35.4
–38.0
–40.8
–43.3
–45.8
–48.2
–50.5
–52.7
–54.5
S21
MAG ANG
1.531
1.527
1.526
1.520
1.506
1.497
1.486
1.478
1.468
1.454
1.440
1.422
1.412
1.399
1.387
1.366
1.349
1.333
1.316
1.298
175.1
170.2
165.4
160.3
155.6
150.7
146.1
141.5
136.7
131.8
127.4
122.8
118.4
113.8
109.3
104.6
100.3
95.8
91.5
87.2
S12
MAG ANG
0.001
0.003
0.003
0.005
0.006
0.008
0.008
0.009
0.010
0.011
0.012
0.012
0.013
0.013
0.013
0.013
0.013
0.013
0.013
0.013
87.1
78.7
81.9
82.0
78.7
83.6
83.0
77.8
77.2
79.9
81.0
78.3
76.9
76.6
74.7
76.7
76.4
80.2
79.8
83.2
S22
MAG ANG
0.979
0.979
0.975
0.974
0.970
0.969
0.968
0.967
0.967
0.967
0.962
0.959
0.956
0.955
0.952
0.950
0.950
0.950
0.949
0.945
–1.9
–4.0
–6.1
–8.2
–10.2
–12.1
–14.2
–16.3
–18.2
–20.3
–22.3
–24.4
–26.5
–28.9
–31.4
–33.9
–36.9
–39.5
–42.4
–45.0
Noise Figure Characteristics (VDS = 5V, VG2S = 1.5V, ID = 10mA)
f
(MHz)
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
NFmin
(dB)
0.76
0.88
0.99
1.11
1.23
1.34
1.45
1.54
1.62
1.71
1.80
1.90
1.99
2.09
2.18
2.26
2.34
2.42
2.50
Gamma Optimum
ANG
0.94
0.91
0.88
0.86
0.83
0.81
0.79
0.77
0.75
0.73
0.71
0.69
0.67
0.65
0.63
0.61
0.59
0.56
0.54
MAG
5.8
8.4
11.0
13.4
15.6
17.8
19.9
22.0
24.0
25.9
27.8
29.7
31.6
33.5
35.5
37.5
39.5
41.6
43.8
Rn
(Ω)
59.7
59.6
59.4
59.1
58.8
58.4
58.0
57.4
56.8
56.2
55.4
54.6
53.8
52.8
51.8
50.7
49.6
48.3
47.0
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Page 5
Package Outline Unit: mm
3
2.0 ± 0.2
(0.65)
1.3
(0.65)
SGM2014AN
M-281
0.9 ± 0.1
0.425
2
0 ± 0.1
1.25 ± 0.1
2.1 ± 0.2
0.3 – 0.05
SONY CODE
EIAJ CODE
JEDEC CODE
+ 0.1
(0.6)
1
+ 0.1
0.4 – 0.05
PACKAGE MATERIAL
LEAD TREATMENT
LEAD MATERIAL
PACKAGE WEIGHT
0.1 – 0.01
1 : Source
2 : Gate 1
3 : Gate 2
4 : Drain
EPOXY RESIN
SOLDER PLATING
COPPER
0.1g
+ 0.1
4
(0.65)
1.25
M-281
– 5 –
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