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CMOS-CCD 1H Delay Line for PAL
CXL5515M/P
Description
The CXL5515M/P are CMOS-CCD delay line ICs
designed for processing video signals. This ICs
provide a 1H delay time for PAL chroma signals
including the external lowpass filter.
Features
• Single 5V power supply
• Low power consumption
• Built-in peripheral circuit
• Built-in tripling PLL circuit
• Center bias mode
Absolute Maximum Ratings (Ta = 25°C)
• Supply voltage VDD +6 V
• Operating temperature Topr –10 to +60 °C
• Storage temperature Tstg –55 to +150 °C
• Allowable power dissipation
PD
CXL5515M 350 mW
CXL5515P 480 mW
CXL5515M CXL5515P
8 pin SOP (Plastic) 8 pin DIP (Plastic)
Input Signal Amplitude
VSIG 500mVp-p (Typ.), 575mVp-p (Max.)
Functions
• 848-bit CCD register
• Clock driver
• Auto bias circuit
• Input center bias circuit
• Sample and hold circuit
• Tripling PLL circuit
• Inverted output
Recommended Operating Range (Ta = 25˚C)
VDD 5V ± 5%
Recommended Clock Conditions (Ta = 25˚C)
• Input clock amplitude
VCLK 0.2 to 1.0Vp-p(0.4Vp-p Typ.)
• Clock frequency fCLK 4.433619MHz
• Input clock waveform Sine wave
Block Diagram and Pin Configuration (Top View)
V
DD VCO OUT VCO IN CLK
8
Auto-bias circuit
Bias circuit
7
Structure
CMOS-CCD
CCD
(848 bit)
Output circuit
(S/H 1 bit)
6
5
PLL
Timing circuit
Clock driver
Bias circuit A
Bias circuit B
1
IN AB OUT V
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
2
3
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4
SS
E94904-ST
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Pin Description
Pin No. Symbol I/O Description Impedance
CXL5515M/P
1
2
3
4
5
6
7
8
IN
AB
OUT
VSS
CLK
VCO IN
VCO OUT
VDD
Electrical Characteristics
Item Symbol Conditions Min. Typ. Max. Unit
Supply current
Low frequency gain
IDD
GL
>10KΩ
40 to 500Ω
>10KΩ
O
O
—
O
—
I
Signal input
Auto-bias DC output
Signal output
GND
I
Clock input (fsc)
I
VCO input
VCO output (3fsc)
5V power supply
(Ta = 25°C, VDD=5V, fCLK = 4.433619MHz, VCLK = 400mVp-p, sine wave)
See “Electrical Characteristics Test Circuit”.
SW conditions
12
—
a — 10 15 20 mA 1
200kHz
500mVp-p
a b –2 0 2 dB 2
Sine wave
NOTE
Frequency response
Differential gain
Differential phase
S/H pulse coupling
S/N ratio
fR
DG
DP
CP
SN
200kHz ←→ 4.434MHz
150mVp-p Sine wave
5-staircase wave
(See Note 4.)
5-staircase wave
(See Note 4.)
No signal input
50% white video signal
(See Note 6.)
b ←→ c
b –2.7 –1.7 2.7 dB 3
dc035%4
d c 0 3 5 degree 4
f a — — 350 mVp-p 5
e d 52 56 — dB 6
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NOTE
1. This is the IC supply current value during clock and signal input.
2. GL is the output gain of OUT pin when a 500mVp-p, 200kHz sine wave is fed to IN pin.
CXL5515M/P
GL = 20 log
OUT pin output voltage [mVp-p]
[dB]
500 [mVp-p]
3. Indicates the dissipation at 4.434MHz in relation to 200kHz. From the output voltage at OUT pin when a
150mVp-p, 200kHz sine wave is fed to IN pin, and from the output voltage at OUT pin when a 150mVp-p,
4.434MHz sine wave is fed to the same, calculation is made according to the following formula.
fR = 20 log
OUT pin output voltage (4.434MHz) [mVp-p]
[dB]
OUT pin output voltage (200kHz) [mVp-p]
4. In Fig. below, the differential gain (DG) and the differential phase (DP), are tested with a vector scope
when the 5-staircase wave is fed.
150mV
350mV
500mV
150mV
1H 64µs
5. Leakage of internal clock components and related high frequency component to the output signal, during
no signal input, is tested.
Test value
[mVp-p]
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